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公开(公告)号：US20220406689A1
公开(公告)日：2022-12-22
申请号：US17752339
申请日：2022-05-24
发明人： Motohito HORI , Yoshinari IKEDA , Akira HIRAO
IPC分类号： H01L23/49 , H01L23/31 , H01L23/373 , H01L23/498 , H01L25/07
摘要： A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; a printed circuit board provided over and electrically connected to the semiconductor chip; a first external connection terminal electrically connected to the conductive plate and extending upward from the conductive plate; a first conductive block provided to surround an outer circumference of the first external connection terminal in an insulated state; and a sealing member provided to seal the semiconductor chip, the printed circuit board, and the first conductive block.
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公开(公告)号：US20220406494A1
公开(公告)日：2022-12-22
申请号：US17734979
申请日：2022-05-02
发明人： Taichi KARINO
IPC分类号： H01C17/00 , H01C1/142 , H01L23/522 , H01L23/00
摘要： A resistance element includes a plurality of resistance chips stacked vertically, each of the plurality of resistance chips including a semiconductor substrate, one or more resistance layers on a field insulating film, a pad forming electrode on electrically connected to the one or more resistance layers, a relay wiring on the interlayer insulating film, laterally separated from the pad forming electrode, electrically connected to another end of at least one of the one or more resistance layers on one end and to a semiconductor substrate on another end, and a back surface electrode at a bottom of the semiconductor substrate, making ohmic contact with the semiconductor substrate, wherein the plurality of resistance chips have the same planar outer shape, and are stacked one over another so as to constitute a resistor as a whole.
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公开(公告)号：US20220399304A1
公开(公告)日：2022-12-15
申请号：US17727809
申请日：2022-04-25
发明人： Narumi SATO , Yuta TAMAI
IPC分类号： H01L23/00
摘要： Provided is an electronic apparatus including a metal wiring. The metal wiring includes a plurality of first regions covered with a solder layer, a second region provided between two first regions of the plurality of first regions, and a third region having a nitrogen amount of 20 atoms % or more. An oxygen amount is largest in the second region, followed by at least one of the plurality of first regions, and then by the third region. The nitrogen amount may be largest in the third region, followed by at least one of the plurality of first regions, and then by the second region.
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公开(公告)号：US11527634B2
公开(公告)日：2022-12-13
申请号：US17234083
申请日：2021-04-19
发明人： Naoyuki Ohse
摘要： An SBD of a JBS structure has on a front side of a semiconductor substrate, nickel silicide films in ohmic contact with p-type regions and a FLR, and a titanium film forming a Schottky junction with an n−-type drift region. A thickness of each of the nickel silicide films is in a range from 300 nm to 700 nm. The nickel silicide films each has a first portion protruding from the front surface of the semiconductor substrate in a direction away from the front surface of the semiconductor substrate, and a second portion protruding in the semiconductor substrate from the front surface of the semiconductor substrate in a depth direction. A thickness of the first portion is equal to a thickness of the second portion. A width of the second portion is wider than a width of the first portion.
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公开(公告)号：US20220392858A1
公开(公告)日：2022-12-08
申请号：US17890254
申请日：2022-08-17
发明人： Tohru SHIRAKAWA , Yasunori AGATA , Naoki SAEGUSA
IPC分类号： H01L23/00 , H01L29/417
摘要： There is provided a semiconductor device including: a pad portion that is provided above the upper surface of the semiconductor substrate and that is separated from the emitter electrode; a wire wiring portion that is connected to a connection region on an upper surface of the pad portion; a wiring layer that is provided between the semiconductor substrate and the pad portion and that includes a region overlapping the connection region; an interlayer dielectric film that is provided between the wiring layer and the pad portion and that has a through hole below the connection region; a tungsten portion that contains tungsten and that is provided inside the through hole and electrically connects the wiring layer and the pad portion; and a barrier metal layer that contains titanium and that is provided to cover an upper surface of the interlayer dielectric film below the connection region.
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公开(公告)号：US11521933B2
公开(公告)日：2022-12-06
申请号：US16835238
申请日：2020-03-30
发明人： Shuangching Chen , Sayaka Yamamoto
IPC分类号： H01L23/495 , H01L23/48 , H01L21/00 , H01R9/00 , H05K7/18 , H01L23/538 , H02M7/483 , H01L23/00 , H01L23/498 , H01L29/739 , H01L29/10 , H01L29/808
摘要： A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.
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公开(公告)号：US11515869B2
公开(公告)日：2022-11-29
申请号：US17236488
申请日：2021-04-21
发明人： Kenichiro Sato
IPC分类号： H02H7/00 , H03K17/082 , H02H1/00 , H02H7/20 , H03K17/08
摘要： A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element. The control circuit further includes a plurality of alarm detection circuits respectively detecting a plurality of abnormalities, a protection circuit stopping the gate control circuit responsive to the detection of any abnormality, an alarm signal generation circuit generating an alarm signal responsive to the detected abnormality, a warning detection circuit detecting a warning before any of the abnormalities is detected, and a pulse generation circuit generating a warning signal while the warning is being detected. The alarm signal is a one-shot pulse having a pulse width thereof corresponding to the detected abnormality, such that alarm signals generated responsive to different abnormalities have different pulse widths. The warning signal includes a plurality of successive pulses, each of which has a pulse width smaller than any of the pulse widths of the alarm signals.
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公开(公告)号：US11515387B2
公开(公告)日：2022-11-29
申请号：US17078237
申请日：2020-10-23
发明人： Yasuyuki Kawada
摘要： A method of manufacturing a silicon carbide substrate having a parallel pn layer. The method includes preparing a starting substrate containing silicon carbide, forming a first partial parallel pn layer on the starting substrate by a trench embedding epitaxial process, stacking a second partial parallel pn layer by a multi-stage epitaxial process on the first partial parallel pn layer, and stacking a third partial parallel pn layer on the second partial parallel pn layer by another trench embedding epitaxial process. Each of the first, second and third partial parallel pn layers is formed to include a plurality of first-conductivity-type regions and a plurality of second-conductivity-type regions alternately disposed in parallel to a main surface of the silicon carbide substrate. The first-conductivity-type regions of the first and third partial parallel pn layers face each other in a depth direction of the silicon carbide substrate, and the second-conductivity-type regions partial parallel pn layers face each other in the depth direction.
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公开(公告)号：US11513546B2
公开(公告)日：2022-11-29
申请号：US17412987
申请日：2021-08-26
发明人： Takahiro Mori
IPC分类号： G05F1/56 , H03K17/687
摘要： A current generation circuit includes a metal-oxide-semiconductor (MOS) transistor having a source terminal coupled to one line of a power supply line and a ground line, a voltage generation circuit configured to generate a first voltage corresponding to a resistance value of wiring between the one line and the source terminal, and a control circuit configured to cause the MOS transistor to generate a predetermined current based on the first voltage.
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公开(公告)号：US20220370949A1
公开(公告)日：2022-11-24
申请号：US17737957
申请日：2022-05-05
发明人： Kuniyuki TAKAHASHI , Taichiro KATO
摘要： Provided is a scrubber apparatus for geothermal power generation configured to treat gas from geothermal power generation equipment to supply a power generation apparatus with the treated gas. The scrubber apparatus for geothermal power generation comprises: a wet-type cyclone scrubber unit that has a reaction tower into which the gas is introduced and a liquid spray unit for spraying liquid into the reaction tower and that is configured to treat the gas with the liquid; a gas derivation unit connected to the wet-type cyclone scrubber unit and configured to derive the gas to the power generation apparatus; and a swirling unit that is arranged farther downstream than the liquid spray unit in a gas flow channel including the wet-type cyclone scrubber unit and the gas derivation unit and that is configured to swirl the gas in a predetermined swirling direction.
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