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公开(公告)号：US5969286A
公开(公告)日：1999-10-19
申请号：US979971
申请日：1997-11-26
申请人： Michael A. Ward , David L. Overman
发明人： Michael A. Ward , David L. Overman
摘要： A slapper detonator includes an explosive pellet disposed within a detonator housing and a bridge chip disposed within a pocket defined between a pair of printed circuit boards. One of the printed circuit boards is disposed between the bridge chip and the explosive pellet and includes an opening centered over the bridge element to permit a flyer to accelerate before impacting the explosive pellet. The printed circuit board with the opening also establishes a connection between the bridge contact pads and metalized patterns or pads on the other printed circuit board which are, in turn, connected with metalized patterns or pads on an opposite side of the board. Various input contacts can be attached to the metalized pads, including an adapter board which converts side-by-side pads to concentric pads to permit coaxial connectors to be used. The slapper detonator can be used with a hermetic feed-through assembly having a feed-through housing which connects to a fuze housing in hermetically sealed relation and output contacts which mate in a detachable manner with the input contacts on the slapper detonator to permit removal of the detonator from the fuze electronics for periodic inspection and testing.
摘要翻译： 撞击式雷管包括设置在雷管壳体内的炸药丸和设置在限定在一对印刷电路板之间的口袋内的桥芯片。 印刷电路板之一设置在桥芯片和爆炸丸之间，并且包括以桥元件为中心的开口，以允许飞翼在撞击炸药丸之前加速。 具有开口的印刷电路板还建立了桥接触垫和另一印刷电路板上的金属化图案或焊盘之间的连接，其又与板的相对侧上的金属化图案或焊盘连接。 可以将各种输入触点附接到金属化焊盘，包括将并排焊盘转换成同心焊盘的适配器板，以允许使用同轴连接器。 挡泥板雷管可以与密封的馈通组件一起使用，该组件具有通过外壳连接到气密密封的引信壳体和输出触点，该接触件可拆卸地与释放器雷管上的输入触点配合， 引信从引信电子定期检查和测试。
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42.发明授权Semiconductor fuse device and method for forming a semiconductor fuse device 失效半导体熔丝器件及形成半导体熔丝器件的方法
公开(公告)号：US5798475A
公开(公告)日：1998-08-25
申请号：US681780
申请日：1996-07-29
IPC分类号： H01H69/02 , F42B3/13 , H01H85/02 , H01H85/04 , H01H85/045 , H01H85/046
CPC分类号： F42B3/13
摘要： A method for forming a semiconductor fuse device (23) having a fuse element (20) for an igniter device, comprises the steps of providing a semiconductor substrate (12), forming an insulator layer (14) on the semiconductor substrate, forming a single active layer (16) on the insulator layer, having a predetermined depth (18) of greater than 4 microns and patterning and etching the active layer to form the fuse element (20). Preferably, the forming a single active layer step includes the step of atomic bonding an active layer to the insulator layer.
摘要翻译： 一种用于形成具有用于点火装置的熔丝元件（20）的半导体熔丝器件（23）的方法，包括以下步骤：提供半导体衬底（12），在半导体衬底上形成绝缘体层（14），形成单个 有源层（16），具有大于4微米的预定深度（18），并构图并蚀刻有源层以形成熔丝元件（20）。 优选地，形成单个有源层步骤包括将有源层原子键合到绝缘体层的步骤。
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公开(公告)号：US5385097A
公开(公告)日：1995-01-31
申请号：US92648
申请日：1993-07-16
摘要： Disclosed is an electroexplosive device including a semiconductor igniter chip with improved crack detection features and which fires in a known location. The chip includes diffused regions so that cracks formed therethrough will result in high leakage currents which are easily detected.
摘要翻译： 公开了一种包括具有改进的裂纹检测特征并且在已知位置发射的半导体点火器芯片的电炸药装置。 芯片包括扩散区域，使得通过其形成的裂纹将导致容易检测到的高漏电流。
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公开(公告)号：US5370054A
公开(公告)日：1994-12-06
申请号：US955189
申请日：1992-10-01
申请人： Robert Reams , Judith McCullen , Jonathan Terrell
发明人： Robert Reams , Judith McCullen , Jonathan Terrell
CPC分类号： F42B3/13
摘要： An RF-insensitive semiconductor slapper ignitor is created using a siliconubstrate having a first metallized portion centrally located on its bottom face to form a Schottky barrier diode thereon, and a second substantially smaller metallized portion centrally located on its top face to form a consumable plug. A flyer disc is disposed atop the second metallized portion and is propelled when the consumable plug vaporizes in response to the high current density associated with ignition. In various embodiments the flyer disc is either an insulating material such as plastic, or polyimide, or formed integral to a top contact metal layer.
摘要翻译： 使用具有中心位于其底面上的第一金属化部分的硅衬底产生RF不敏感的半导体斩波器点火器，以在其上形成肖特基势垒二极管，以及第二基本上较小的金属化部分，位于其顶面上方以形成消耗性插头 。 传单盘设置在第二金属化部分的顶部，并且当消耗性塞子响应于与点火相关联的高电流密度而蒸发时被推进。 在各种实施例中，传单盘是绝缘材料，例如塑料或聚酰亚胺，或与顶部接触金属层一体形成。
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公开(公告)号：US5327834A
公开(公告)日：1994-07-12
申请号：US889427
申请日：1992-05-28
申请人： Peter L. C. Atkeson
发明人： Peter L. C. Atkeson
CPC分类号： F42B3/13
摘要： An integrated field-effect initiator useful for the pyrotechnic initiation or detonation of explosives includes a semiconductor channel of a first conductivity type bounded on opposite ends by semiconductor material of an opposite conductivity type to define two PN junctions in the conduction path. The semiconductor channel is doped to define a conduction path of sufficiently high impedance to prevent unintended initiation. A gate electrode is positioned adjacent the channel and separated therefrom by an insulation layer to affect the conductivity of the channel as a function of a potential applied to the gate. In normal operation, an initiation electrical potential is applied to the opposite ends of the conduction path and a gate potential is applied to the gate to effect field-enhanced conduction in the path sufficient to allow vaporization of the path to cause initiation of an explosive material in contact with the path. In another embodiment, a slapper structure is mounted adjacent the channel and is propelled into the explosive to effect detonation. The initiator can be manufactured by conventional integrated circuit fabrication techniques and provides a normally inhibited device that requires application of a gate potential prior to initiation.
摘要翻译： 用于爆炸物的烟火爆炸或引爆的集成场效应引发剂包括由相反导电类型的半导体材料相对端限定的第一导电类型的半导体通道，以限定导电路径中的两个PN结。 半导体沟道被掺杂以限定足够高阻抗的传导路径，以防止意外启动。 栅电极位于通道附近，并通过绝缘层与其隔开，以影响作用于栅极的电位的函数的沟道的导电性。 在正常操作中，将引发电位施加到导电路径的相对端，并且栅极电位施加到栅极以在路径中实现场增强的传导，足以允许路径的蒸发以引起爆炸物质的引发 与路径接触。 在另一个实施例中，一个挡板结构安装在通道附近，并被推进炸药以进行爆炸。 引发剂可以通过传统的集成电路制造技术制造，并且提供在启动之前需要施加栅极电位的正常受抑制的器件。
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公开(公告)号：US5285727A
公开(公告)日：1994-02-15
申请号：US866776
申请日：1992-04-02
申请人： Robert B. Reams, Jr. , Jonathan Terrell , Bohdan Dobriansky , Judith T. McCullen , Raymond Goetz
发明人： Robert B. Reams, Jr. , Jonathan Terrell , Bohdan Dobriansky , Judith T. McCullen , Raymond Goetz
摘要： An RF-insensitive semiconductor ignitor and primer cup assembly is createdsing a double polished n-type silicon substrate having its top and bottom surfaces partially metallized to form Schottky barrier diodes. The metallized portion of the back side of the substrate is placed in contact with a conductive surface, and means are provided to electrically isolate those portions of the substrate which have not been metallized from both the metallized portions and the conductive surface. In one embodiment, the isolating means is an integral oxide ring which extends from the periphery of the contact metal to the edge of the substrate. In another embodiment, the means of isolation is a separate plastic ring.
摘要翻译： 使用双面抛光的n型硅衬底制造RF不敏感半导体点火器和底座杯组件，其具有部分金属化的顶表面和底表面以形成肖特基势垒二极管。 衬底的背侧的金属化部分被放置成与导电表面接触，并且提供装置以将未被金属化的衬底的那些部分与金属化部分和导电表面电隔离。 在一个实施例中，隔离装置是从接触金属的周边延伸到基板的边缘的整体氧化物环。 在另一个实施例中，隔离装置是单独的塑料环。
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公开(公告)号：US5052301A
公开(公告)日：1991-10-01
申请号：US560349
申请日：1990-07-30
申请人： Richard E. Walker
发明人： Richard E. Walker
IPC分类号： F42B3/13
CPC分类号： F42B3/13
摘要： In an electric detonator or blasting cap of the type including a base charge of high explosive material, an initiator means or initiator for creating an abrupt eruption in response to application of a selected voltage across the igniter and means for detonating the base charge upon creation of the abrupt eruption of the initiator, there is provided an improvement comprising forming the initiator as a junction of energetic material, such as a PN junction of an LED chip, encapsulated in a plastic or glass confinement housing. The housing has a directional controlling partition means facing in a selected direction. This partition has an effective spacing from the junction substantially less than the remainder of the confinement housing whereby application of a voltage pulse of over about 500 volts causes the junction to form an electric arc to create a plasma by a confined, high temperature, high pressure exothermic reaction. The effective spacing of the aforementioned partition at the junction is thick enough to confine the exothermic reaction until creation of the plastic and thin enough to allow the plasma to rupture the controlled partition and penetrate through the partition a given distance in the selected direction. The base charge is located in the selected direction and spaced from the partition a distance less than the given distance of plasma penetration whereby the plasma impacts against the base charge, thus, detonating the base charge.
摘要翻译： 在包括高爆炸材料的基本电荷的类型的电雷管或爆破帽中，用于响应于在点火器上施加选定电压而产生突然喷发的起动器装置或起动器，以及用于在产生 引发剂的突然爆发提供了一种改进，其包括将引发剂形成为能量材料（例如LED芯片的PN结）的结，其封装在塑料或玻璃限制壳体中。 壳体具有面向选定方向的方向控制分隔装置。 该分隔体具有与接合部有效的间隔，远小于限制壳体的其余部分，由此施加超过约500伏的电压脉冲导致接合部形成电弧，以通过受限制的高温高压产生等离子体 放热反应 连接处上述分隔物的有效间距足够大以限制放热反应，直到产生塑料并足够薄，以使等离子体破裂受控分区，并沿所选方向穿过隔板给定的距离。 基极电荷位于所选择的方向上并且与分隔物隔开距离小于等离子体穿透的给定距离，由此等离子体冲击基极电荷，从而引爆基极电荷。
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公开(公告)号：US4843964A
公开(公告)日：1989-07-04
申请号：US150805
申请日：1988-02-01
摘要： A non electrically conductive substrate includes both an SCB and a semiconductor switch, the switch being electrically connected to cause the SCB to fire when the switch is triggered.
摘要翻译： 非导电衬底包括SCB和半导体开关，开关电连接，以在开关触发时使SCB发光。
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公开(公告)号：US4819560A
公开(公告)日：1989-04-11
申请号：US53150
申请日：1987-05-21
CPC分类号： F42B3/13
摘要： A detonator firing element which includes a miniature energy dissipation device located on a substrate which forms part of an integrated electronic circuit. An explosive or pyrotechnic compound is exposed to the effects of energy dissipated by the device. The device may be resistive, be formed by a semi-conductor device, or be a field effect device. The integrated circuit includes timing, testing, control, communication and interlock circuits to implement stand alone or computer controlled blast systems. Protection against over-voltages and induced currents is provided. Due to the integrated circuit approach power consumption is kept to a minimum and a detonator incorporating the firing element can be powered for a substantial time period by an energy storage device such as a capacitor.
摘要翻译： 一种雷管发射元件，其包括位于形成集成电子电路的一部分的基板上的微型能量耗散装置。 爆炸物或烟火化合物暴露于由设备消散的能量的影响。 该器件可以是电阻式的，由半导体器件形成，或者是场效应器件。 集成电路包括定时，测试，控制，通信和联锁电路，以实现独立或计算机控制的爆炸系统。 提供了防过电压和感应电流的保护。 由于集成电路方法的功率消耗被保持为最小，并且包含击发元件的雷管可以通过诸如电容器的能量存储装置供电相当长的时间。
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公开(公告)号：US4484523A
公开(公告)日：1984-11-27
申请号：US479424
申请日：1983-03-28
CPC分类号： F42B3/13
摘要： A solid state detonator is made using a silicon chip with appropriate surnding sections to provide the resistance path necessary to detonate a primary explosive. The chip is set on a metal-to-glass-to-metal header to provide uniformity of current and insulation capabilities. A gold mesh is used as a conductor connected to a chromium-silicon resistor film. This provides a uniform annular heating ring for detonation purposes. The silicon chip may be doped for high conductivity and low resistance. This arrangement provides fast function with moderate power pulses while the thermal design permits high no-fire current levels.
摘要翻译： 固态雷管使用具有适当周围部分的硅芯片制成，以提供引爆原发炸药所需的阻力路径。 芯片设置在金属对玻璃到金属的头部，以提供电流和绝缘能力的均匀性。 使用金网作为连接到铬硅电阻膜的导体。 这提供了用于爆炸目的的均匀的环形加热环。 硅芯片可以被掺杂用于高导电性和低电阻。 这种布置提供具有中等功率脉冲的快速功能，而热设计允许高的无火电流水平。
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