公开(公告)号：US20010024081A1

公开(公告)日：2001-09-27

申请号：US09842786

申请日：2001-04-27

Inventor： Sung-Hwan Moon ,  Dong-Hee Han ,  Seung-Kwon Han

IPC: H01J001/14 ,  H01J019/06

CPC classification number: H01J9/04 ,  H01J1/142

Abstract: A cathode for an electron tube and a preparing method therefor are provided. In the cathode for an electron tube having a base metal and an electron-emitting material layer, the particle size of the micro structure of the surface of the base metal is controlled to be in the range of 3 to 50 nullm. The cathode for an electron tube has an excellent effect of diffusing intermediate products generated during the operation of the cathode, and is capable of consistently supplying a diffusion path of a reducing agent. Also, the cut off drift rate can be reduced, thereby attaining a long life span characteristic.

Abstract translation: 提供了一种电子管的阴极及其制备方法。 在具有贱金属和电子发射材料层的电子管的阴极中，将母体表面的微结构的粒径控制在3〜50μm的范围内。 用于电子管的阴极具有极好的扩散在阴极操作期间产生的中间产物的效果，并且能够一致地提供还原剂的扩散路径。 此外，可以减少切断漂移率，从而获得长寿命特性。