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公开(公告)号：US11189990B2
公开(公告)日：2021-11-30
申请号：US16615452
申请日：2018-05-18
申请人： OSRAM OLED GmbH
IPC分类号： H01S5/0231 , H01S5/0234 , H01S5/02234 , H01S5/0232 , H01S5/0236 , H01S5/0233 , H01L23/00 , H01S5/042 , H01S5/02345 , H01S5/028
摘要： A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.
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公开(公告)号：US20210281037A1
公开(公告)日：2021-09-09
申请号：US17240620
申请日：2021-04-26
发明人： Chen-Hua Yu , An-Jhih Su , Chia-Nan Yuan , Shih-Guo Shen , Der-Chyang Yeh , Yu-Hung Lin , Ming Shih Yeh
IPC分类号： H01S5/02 , H01S5/30 , H01S5/026 , H01S5/323 , H01S5/042 , H01S5/0234 , H01S5/0237 , H01S5/02234
摘要： In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.
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公开(公告)号：US11081857B2
公开(公告)日：2021-08-03
申请号：US16700594
申请日：2019-12-02
发明人： Nobuhiro Ohkubo
IPC分类号： H01S5/0234 , H01S5/0231 , H01S5/02355
摘要： A semiconductor laser device includes a semiconductor laser element, a sub mount member, a mount section having an upper surface on which the semiconductor laser element is mounted with the sub mount member interposed therebetween, a lead pin disposed at left and right sides of the mount section, a retainer that retains the mount section and the lead pin together and that is composed of an insulative material, and a protrusion protruding toward the left and right sides of the mount section. A lower surface of the mount section is parallel to an upper surface of the mount section and protrudes from a lower surface of the retainer.
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公开(公告)号：US11598850B2
公开(公告)日：2023-03-07
申请号：US16462980
申请日：2017-11-30
IPC分类号： G01C3/08 , G01S7/481 , G01S7/486 , H01L25/16 , H01L27/15 , H01S5/042 , H01S5/42 , H01L27/146 , G01S17/894 , H01S5/00 , H01S5/0234 , H01S5/02345
摘要： An apparatus has an illumination layer having an array of a plurality of illuminators, and a circuit layer having one or more drivers for controlling the plurality of illuminators. The laser layer and the circuit layer overlap at least partially, and each driver of the one or more drivers controls at least one illuminator of the plurality of illuminators.
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公开(公告)号：US20230056968A1
公开(公告)日：2023-02-23
申请号：US17580437
申请日：2022-01-20
IPC分类号： H01S5/024 , H01S5/0234 , H01S5/02345 , H01S5/0237
摘要： In some implementations, an opto-electrical device includes a heatsink; a thermally conductive element disposed on a first region of a surface of the heatsink; an adaptive thickness thermally conductive pad disposed on the thermally conductive element; an integrated circuit (IC) disposed on the adaptive thickness thermally conductive pad; a thermoelectric cooler (TEC) disposed on a second region of the surface of the heatsink; an opto-electrical chip disposed on the TEC; and a substrate disposed on the IC and the opto-electrical chip, wherein the substrate is configured to electrically connect the IC and the opto-electrical chip.
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公开(公告)号：US20230026423A1
公开(公告)日：2023-01-26
申请号：US17381694
申请日：2021-07-21
IPC分类号： H01S5/024 , H01L23/367 , H01S5/0234 , H01S5/02345
摘要： Presented herein are a submount architecture for an electro-optical engine, which may be embodied as an apparatus in the form of at least an electro-optical engine and a multimode node, and a method for providing the same. According to at least one example, an apparatus includes a printed circuit board (PCB), a substrate with a finer structuring than the PCB, and electro-optical components. A bottom surface of the substrate is coupled to the PCB and electro-optical components are mounted on a top surface of the substrate. The electro-optical components include one or more optical components arranged to emit optical signals towards and/or receive optical signals from an area above the top surface of the substrate.
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公开(公告)号：US11557874B2
公开(公告)日：2023-01-17
申请号：US17323328
申请日：2021-05-18
IPC分类号： H01S5/40 , H01S5/024 , H01S5/023 , H01S5/042 , H01S5/0234
摘要： Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.
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公开(公告)号：US11552453B2
公开(公告)日：2023-01-10
申请号：US15553370
申请日：2016-02-24
申请人： JENOPTIK Laser GmbH
IPC分类号： H01S5/40 , H01S5/02355 , H01S5/02365 , H01S5/024 , H01S5/0234
摘要： A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.
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公开(公告)号：US20220352685A1
公开(公告)日：2022-11-03
申请号：US17733104
申请日：2022-04-29
申请人： OptoNet Inc.
发明人： Yingyan Huang
摘要： It is an aim of the present invention to provide ultra-compact highly-integrated diffraction-grating semiconductor lasers on chips. Various embodiments combined enable the lasers to be compact in size, light weight, mechanically rugged, low in manufacturing cost, and in some cases high in electrical wall-plugged power efficiency or high in optical power output, comparing to typical lasers based on discrete optical components.
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公开(公告)号：US11482835B2
公开(公告)日：2022-10-25
申请号：US16917785
申请日：2020-06-30
IPC分类号： H01S5/042 , H01S5/183 , H01S5/42 , H01S5/00 , H01S5/0234 , H01S5/0237 , H01S5/02345 , H01S5/024 , H01S5/40 , H01S5/02 , H01S5/062
摘要： Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.
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