公开(公告)号：US20130034969A1

公开(公告)日：2013-02-07

申请号：US13504962

申请日：2012-01-10

申请人： Lingkuan Meng

发明人： Lingkuan Meng

IPC分类号： H01L21/314

CPC分类号： H01L21/76819 ,  C23C16/4401 ,  C23C16/50 ,  C23C16/54

摘要： The present invention provides a thin film deposition method, comprising: seasoning a first deposition chamber; seasoning a second deposition chamber; pre-processing the first deposition chamber, depositing a thin film in the first deposition chamber, cleaning the first deposition chamber, post-processing and withdrawing the wafers; pre-processing the second deposition chamber, depositing a thin film in the second deposition chamber, cleaning the second deposition chamber, post-processing and withdrawing the wafers; characterized in that there is a time interval between the step of seasoning the second deposition chamber and the step of seasoning the first deposition chamber. The method of stabilizing the thin film thickness of the present invention can well solve the problem that the thin film on the first pair of wafers of each batch of products becomes thinner or thicker during the deposition. In addition, the present invention greatly reduces the influences from human activities without increasing the seasoning wafers, thus realizing automation; moreover, the affected wafers no longer need to be scraped, thus increasing the yield of products.

摘要翻译： 本发明提供一种薄膜沉积方法，包括：调节第一沉积室; 调味第二沉积室; 预处理第一沉积室，在第一沉积室中沉积薄膜，清洁第一沉积室，后处理和取出晶片; 预处理第二沉积室，在第二沉积室中沉积薄膜，清洗第二沉积室，后处理和取出晶片; 其特征在于，在调节第二沉积室的步骤与调节第一沉积室的步骤之间存在时间间隔。 稳定本发明薄膜厚度的方法可以很好地解决在沉积期间每批产品的第一对晶片上的薄膜变得更薄或更厚的问题。 此外，本发明大大降低了人体活动的影响，而不增加调味片，从而实现自动化; 此外，受影响的晶片不再需要刮擦，从而提高产品的产量。

公开(公告)号：US08367557B2

公开(公告)日：2013-02-05

申请号：US12607223

申请日：2009-10-28

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).

摘要翻译： 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内压低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含氧气体生成含氧的氧化物质，氧化物质氧化含元素层; 其中在步骤（a）中所述含氢气体与所述源气体一起供应到所述处理容器中。

公开(公告)号：US20130001673A1

公开(公告)日：2013-01-03

申请号：US13615030

申请日：2012-09-13

申请人： D. V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Rhett Brewer

发明人： D. V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Rhett Brewer

IPC分类号： H01L29/792 ,  H01L21/336 ,  H01L21/314 ,  B82Y40/00

CPC分类号： H01L21/28282 ,  B82Y10/00 ,  G11C11/5671 ,  H01L21/02148 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/42348

摘要： Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.

摘要翻译： 公开了用于形成存储器单元的存储器，系统和方法。 一个这种存储单元包括电荷存储节点，其在隧道电介质上方包括纳米点，并且在纳米点上包括保护膜。 在另一个存储单元中，电荷存储节点包括包含钌合金的纳米点。 存储单元可以包括在保护膜或钌合金纳米点上的栅极间电介质和在栅极间电介质上的控制栅极。 保护膜和钌合金可以被配置为在形成栅极间电介质期间保护至少一些纳米点不被蒸发。

公开(公告)号：US20120202358A1

公开(公告)日：2012-08-09

申请号：US13366025

申请日：2012-02-03

申请人： Dan Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

发明人： Dan Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

IPC分类号： H01L21/314

CPC分类号： H01L21/022 ,  C23C16/45529 ,  H01L21/02148 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/56 ,  H01L29/517 ,  H01L29/78

摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。

公开(公告)号：US20120178267A1

公开(公告)日：2012-07-12

申请号：US13423436

申请日：2012-03-19

申请人： Ziyun Wang ,  Chongying Xu ,  Ravi K. Laxman ,  Thomas H. Baum ,  Bryan Hendrix ,  Jeffrey Roeder

发明人： Ziyun Wang ,  Chongying Xu ,  Ravi K. Laxman ,  Thomas H. Baum ,  Bryan Hendrix ,  Jeffrey Roeder

IPC分类号： H01L21/318 ,  C07F7/02 ,  H01L21/314

CPC分类号： H01L21/0217 ,  C07F7/025 ,  C07F7/10 ,  C07F7/12 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185

摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g.,

摘要翻译： 半导体器件如低介电常数（k）薄膜，高k栅极硅酸盐，低温硅外延膜和含有氮化硅（Si 3 N 4），硅氧氮化物（SiO x N y）的膜的制造中的含硅膜的硅前体， 和/或二氧化硅（SiO 2）。 本发明的前体适于在低温（例如，<500℃）的化学气相沉积工艺中使用，用于制造ULSI器件和器件结构。

公开(公告)号：US20120161288A1

公开(公告)日：2012-06-28

申请号：US12976994

申请日：2010-12-22

申请人： John William Sherohman ,  Jick Hong Yee ,  Arthur William Coombs, III ,  Kuang Jen J. Wu

发明人： John William Sherohman ,  Jick Hong Yee ,  Arthur William Coombs, III ,  Kuang Jen J. Wu

IPC分类号： H01L29/20 ,  H01L21/314

CPC分类号： H01L21/02241 ,  H01L23/291 ,  H01L29/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

摘要翻译： 在一个实施方案中，在AlSb晶体上形成非导电结晶氧化物层的方法包括在有利于空气吸附分子解吸的温度下，部分真空气氛中热处理AlSb晶体，表面分子基团分解，元素Sb 从AlSb晶体的表面蒸发并将AlSb晶体暴露于包含氧的气​​氛，以在AlSb晶体的表面上形成结晶氧化物层。 在另一个实施例中，在AlSb晶体上形成非导电结晶氧化物层的方法包括在非氧化性气氛中，在有助于分解无定形氧化表面层的温度下，将AlSb晶体从 AlSb晶体表面，并从残余表面氧形成稳定的Al和Sb的氧化物，以在AlSb晶体的表面上形成结晶氧化物层。

公开(公告)号：US20120156894A1

公开(公告)日：2012-06-21

申请号：US13369810

申请日：2012-02-09

申请人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum

发明人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/316

CPC分类号： C07F7/10

摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,

摘要翻译： 本发明涉及用于制造ULSI器件和器件结构的低温（例如<550℃）化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物至少包含被至少一个烷基肼官能团取代并且不含卤素取代基的硅烷或乙硅烷衍生物。

公开(公告)号：US20110227142A1

公开(公告)日：2011-09-22

申请号：US12728697

申请日：2010-03-22

申请人： D.V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Rhett Brewer

发明人： D.V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Rhett Brewer

IPC分类号： H01L29/792 ,  H01L21/314 ,  H01L21/28

CPC分类号： H01L21/28282 ,  B82Y10/00 ,  G11C11/5671 ,  H01L21/02148 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/42348

摘要： Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.

摘要翻译： 公开了用于形成存储器单元的存储器，系统和方法。 一个这种存储单元包括电荷存储节点，其在隧道电介质上方包括纳米点，并且在纳米点上包括保护膜。 在另一个存储单元中，电荷存储节点包括包含钌合金的纳米点。 存储单元可以包括在保护膜或钌合金纳米点上的栅极间电介质和在栅极间电介质上的控制栅极。 保护膜和钌合金可以被配置为在形成栅极间电介质期间保护至少一些纳米点不被蒸发。

公开(公告)号：US20110189080A1

公开(公告)日：2011-08-04

申请号：US12658204

申请日：2010-02-04

申请人： Calvin J. Curtis ,  Alexander Miedaner ,  Marinus Franciscus Antonius Maria van Hest ,  David S. Ginley ,  Jennifer Leisch ,  Matthew Taylor ,  Billy J. Stanbery

发明人： Calvin J. Curtis ,  Alexander Miedaner ,  Marinus Franciscus Antonius Maria van Hest ,  David S. Ginley ,  Jennifer Leisch ,  Matthew Taylor ,  Billy J. Stanbery

IPC分类号： B05D5/12 ,  C01B19/04 ,  H01L21/314 ,  H01L21/36

CPC分类号： B05D5/12 ,  C01B19/04 ,  H01L21/02521 ,  H01L21/314

摘要： Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

公开(公告)号：US07964464B2

公开(公告)日：2011-06-21

申请号：US12040426

申请日：2008-02-29

申请人： Takashi Sakuma

发明人： Takashi Sakuma

IPC分类号： H01L21/314 ,  H01L21/8236

CPC分类号： H01L21/823412 ,  H01L21/3145

摘要： A device isolation film is formed in a semiconductor substrate at a border portion between a first region and a second region for defining a first active region in the first region and a second active region in the second region. A gate insulating film and a gate electrode is formed over the semiconductor substrate in the first region. A first photoresist film covering the second region and having an opening exposing the first active region and having an edge on the border portion of the opening positioned nearer the second active region than a middle of the device isolation film is formed over the semiconductor substrate with the gate electrode. Impurity ions are implanted from a direction tilted from a normal direction of the semiconductor substrate with the first photoresist film and the gate electrode as a mask to form pocket regions in the semiconductor substrate on both sides of the gate electrodes.

摘要翻译： 器件隔离膜形成在第一区域和第二区域之间的边界部分的半导体衬底中，用于限定第一区域中的第一有源区和第二区域中的第二有源区。 在第一区域中的半导体衬底上形成栅极绝缘膜和栅电极。 第一光致抗蚀剂膜覆盖第二区域并且具有暴露第一有源区并且在位于第二有源区的位于第二有源区的边界的边界部分上的边缘的开口形成在半导体衬底的上方， 栅电极。 从第一光致抗蚀剂膜和栅极电极作为掩模从从半导体衬底的法线方向倾斜的方向注入杂质离子，以在栅极两侧的半导体衬底中形成袋区。