公开(公告)号：US5977557A

公开(公告)日：1999-11-02

申请号：US145738

申请日：1998-09-02

Applicant: Gyung Ock Kim

Inventor： Gyung Ock Kim

IPC: H01L31/11 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01L31/11

Abstract: The present invention is related to a hot-electron photo transistor. By applying the combination of quantum dots or quantum wires with sizes, the wide spacer layers, and the blocking layers to the electron injecting barrier of the emitter, the wide range of infrared detection can be attained and the resolution of detected infrared wavelength can be increased. And by introducing the resonant tunneling quantum well structure to the base layer the selection, amplification and processing of the specific infrared frequency is possible and the reduction of the dark current is induced. Therefore, the present invention is applicable to ultra-high speed tunable infrared detectors and amplifiers, ultra-high speed switching and logic devices, high speed infrared logic devices with new features, new high-speed infrared logic devices which can reduce the number of logic devices.

Abstract translation: 本发明涉及一种热电子光电晶体管。 通过将量子点或量子线的组合应用于发射体的电子注入势垒的尺寸，宽间隔层和阻挡层，可以获得宽范围的红外检测，并且可以提高检测到的红外波长的分辨率 。 并且通过将谐振隧道量子阱结构引入基极层，可以选择，放大和处理特定的红外频率，并且引起暗电流的减小。 因此，本发明适用于超高速可调谐红外探测器和放大器，超高速开关和逻辑器件，具有新特性的高速红外逻辑器件，可以减少逻辑数量的新型高速红外逻辑器件 设备。