摘要:
A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.
摘要:
Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.
摘要:
A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要:
Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要:
Inventive silsesquioxane polymers are provided, and photoresist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要:
An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.
摘要:
Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.
摘要:
A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.
摘要:
Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要:
The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.