公开(公告)号：US08384180B2

公开(公告)日：2013-02-26

申请号：US12358171

申请日：2009-01-22

申请人： JengPing Lu ,  Raj B. Apte

发明人： JengPing Lu ,  Raj B. Apte

IPC分类号： H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L29/66477 ,  H01L29/04 ,  H01L29/1604 ,  H01L29/20 ,  H01L29/66356 ,  H01L29/7391

摘要： A diode has a first contact of a material having a first conductivity type, a second contact of a material having a second conductivity type arranged co-planarly with the first contact, a channel arranged co-planarly between the first and second contacts, a gate arranged adjacent the channel, and a voltage source electrically connected to the gate. A diode has a layer of material arranged on a substrate, a first region of material doped to have a first conductivity type, a second region of material doped to have a second conductivity type, a channel between the first and second regions formed of an undoped region, a gate arranged adjacent the channel, and a voltage source electrically connected to the gate. A method includes forming a layer of material on a substrate, forming a first region of a first conductivity in the material, forming a second region of a second conductivity in the material, arranged so as to provide a channel region between the first and second regions, the channel region remaining undoped, depositing a layer of gate dielectric on the layer of material, arranging a gate adjacent the channel region on the gate dielectric, and electrically connecting a voltage source to the gate.

摘要翻译： 二极管具有第一导电类型的材料的第一接触，与第一接触面共面布置的具有第二导电类型的材料的第二接触，在第一和第二接触之间共面布置的沟道，栅极 布置在所述通道附近，以及电连接到所述栅极的电压源。 二极管具有布置在衬底上的材料层，第一掺杂材料区域具有第一导电类型，掺杂第二导电类型的第二材料区域，由未掺杂的第一和第二区域形成的沟道 区域，邻近沟道布置的栅极和电连接到栅极的电压源。 一种方法包括在衬底上形成材料层，在材料中形成第一导电性的第一区域，在材料中形成第二导电性的第二区域，其布置成在第一和第二区域之间提供沟道区域 ，沟道区域保留未掺杂，在该材料层上沉积一层栅极电介质，在栅极电介质上布置与该沟道区相邻的栅极，以及将电压源电连接至该栅极。

公开(公告)号：US07459225B2

公开(公告)日：2008-12-02

申请号：US10722156

申请日：2003-11-24

申请人： Raj B. Apte ,  David G. Duff ,  Christian G. Van de Walle ,  Jeng Ping Lu ,  Alberto Salleo ,  Stephen D. White

发明人： Raj B. Apte ,  David G. Duff ,  Christian G. Van de Walle ,  Jeng Ping Lu ,  Alberto Salleo ,  Stephen D. White

IPC分类号： H01M8/10

CPC分类号： H01M8/1016 ,  H01M8/1004 ,  H01M8/1097 ,  H01M8/241 ,  H01M8/2418 ,  H01M8/242 ,  H01M8/2483 ,  Y02P70/56

摘要： An improved fuel cell is described. The invention addresses the problem of mechanical failure in thin electrolytes. One embodiment varies the thickness of the electrolyte and positions at least either the anode or cathode in the recessed region to provide a short travel distance for ions traveling from the anode to the cathode or from the cathode to the anode. A second embodiment uses a uniquely shaped manifold cover to allow close positioning of the anode to the cathode. Using the described structures results in a substantial improvement in fuel cell reliability and performance.

摘要翻译： 描述了改进的燃料电池。 本发明解决了薄电解液中机械故障的问题。 一个实施例改变电解质的厚度并且在凹陷区域中至少位于阳极或阴极之间，以便为从阳极到阴极或阴极到阳极的离子提供短的行进距离。 第二实施例使用独特形状的歧管盖，以允许阳极到阴极的紧密定位。 使用所述结构可以显着提高燃料电池的可靠性和性能。

公开(公告)号：US07358530B2

公开(公告)日：2008-04-15

申请号：US10734429

申请日：2003-12-12

申请人： William S. Wong ,  Jeng Ping Lu ,  Alberto Salleo ,  Michael L. Chabinyc ,  Raj B. Apte ,  Robert A. Street

发明人： William S. Wong ,  Jeng Ping Lu ,  Alberto Salleo ,  Michael L. Chabinyc ,  Raj B. Apte ,  Robert A. Street

IPC分类号： H01L29/04

CPC分类号： H01L27/283 ,  H01L27/12 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/41733 ,  H01L29/78696 ,  H01L51/0541 ,  H01L51/0545

摘要： An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a channel with a channel width. Each channel width is greater than the width or length of the pixel being addressed. By fabricating transistors with extremely long channel widths, lower mobility semiconductor materials can easily be used to fabricate the display device.

摘要翻译： 描述了用于显示器或传感器装置的改进的晶体管阵列。 显示器或传感器装置包括多个像素。 每个像素包括宽度和长度。 每个像素由晶体管寻址。 寻址每个像素的晶体管具有通道宽度。 每个通道宽度大于要寻址的像素的宽度或长度。 通过制造具有非常长的沟道宽度的晶体管，可以容易地使用低迁移率半导体材料来制造显示器件。

公开(公告)号：US06973722B2

公开(公告)日：2005-12-13

申请号：US10715978

申请日：2003-11-17

申请人： Thomas Hantschel ,  David K. Fork ,  Dirk De Bruyker ,  Chinnwen Shih ,  Jeng Ping Lu ,  Christopher L. Chua ,  Raj B. Apte ,  Brent S. Krusor

发明人： Thomas Hantschel ,  David K. Fork ,  Dirk De Bruyker ,  Chinnwen Shih ,  Jeng Ping Lu ,  Christopher L. Chua ,  Raj B. Apte ,  Brent S. Krusor

IPC分类号： G01R1/067 ,  G01R3/00 ,  H05K3/40 ,  H01R43/16

CPC分类号： G01R1/06744 ,  G01R1/06727 ,  G01R3/00 ,  H05K3/4092 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/49218 ,  Y10T29/49222

摘要： Spring structures are subjected to pre-release and post-release annealing to tune their tip height to match a specified target. Post-release annealing increases tip height, and pre-release annealing decreases tip height. The amount of tuning is related to the annealing temperature and/or time. Annealing schedules are determined for a pre-fabricated cache of unreleased spring structures such that finished spring structures having a variety of target heights can be economically produced by releasing/annealing the cache according to associated annealing schedules. Selective annealing is performed using lasers and heat absorbing/reflecting materials. Localized annealing is used to generate various spring structure shapes. Both stress-engineered and strain-engineered spring structures are tuned by annealing.

摘要翻译： 弹簧结构经受预释放和后释放退火以调节其尖端高度以匹配指定的靶。 后释放退火增加尖端高度，并且预释放退火使尖端高度降低。 调谐量与退火温度和/或时间有关。 对于未发布的弹簧结构的预制缓存来确定退火计划，使得可以通过根据相关联的退火计划释放/退火高速缓存来经济地产生具有各种目标高度的成品弹簧结构。 使用激光和吸热/反射材料进行选择性退火。 定位退火用于产生各种弹簧结构形状。 应力设计和应变工程弹簧结构都通过退火进行调整。

公开(公告)号：US06416157B1

公开(公告)日：2002-07-09

申请号：US09164124

申请日：1998-09-30

申请人： Eric Peeters ,  Jaan Noolandi ,  Raj B. Apte ,  Philip D. Floyd ,  Jonathan A. Small ,  Gregory J. Kovacs ,  Meng H. Lean ,  Armin R. Volkel ,  Steven B. Bolte ,  An-Chang Shi ,  Frederick J. Endicott ,  Gregory B. Anderson ,  Dan A. Hays ,  Joel A. Kubby ,  Warren B. Jackson

发明人： Eric Peeters ,  Jaan Noolandi ,  Raj B. Apte ,  Philip D. Floyd ,  Jonathan A. Small ,  Gregory J. Kovacs ,  Meng H. Lean ,  Armin R. Volkel ,  Steven B. Bolte ,  An-Chang Shi ,  Frederick J. Endicott ,  Gregory B. Anderson ,  Dan A. Hays ,  Joel A. Kubby ,  Warren B. Jackson

IPC分类号： B41J214

CPC分类号： B41J2/01 ,  B41J2/14 ,  B41J2/211 ,  B41J2202/02

摘要： A method of marking employs a marking apparatus in which a propellant stream is passed through a channel and directed toward a substrate. Marking material, such as ink, toner, etc., is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. At sufficient velocity, and with appropriate marking material, the marking material may be kinetically fused to the substrate. A multiplicity of channels for directing the propellant and marking material allow for high throughput, high resolution marking. Multiple marking materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without registration. One example is single-pass, full-color printing.

摘要翻译： 标记方法使用标记装置，其中推进剂流通过通道并指向基底。 诸如油墨，调色剂等的标记材料被可控地引入推进剂流中并且赋予足够的动能从而被入射到基底上。 在足够的速度下，并且使用适当的标记材料，标记材料可以与基底动力学融合。 用于引导推进剂和标记材料的多个通道允许高通量，高分辨率标记。 可以将多个标记材料引入通道中并在其入射到基板之前混合，或者混合或叠加在基板上而不进行配准。 一个例子是单程，全色打印。

公开(公告)号：US06408054B1

公开(公告)日：2002-06-18

申请号：US09444704

申请日：1999-11-24

申请人： Jeffrey T. Rahn ,  Raj B. Apte

发明人： Jeffrey T. Rahn ,  Raj B. Apte

IPC分类号： G21K102

CPC分类号： G21K1/10

摘要： Image contrast grids include a body having openings and an x-ray absorbing material in the openings. The openings can be formed by various micromachining techniques and the x-ray absorbing material can be formed in the openings by various coating and deposition techniques. The image contrast grids can have contoured surfaces for improved focusing capabilities. The image contrast grids can remove Compton scattered x-rays in two, non-normal dimensions. The openings can be formed with fine structures that are not visible in most imaging modes.

摘要翻译： 图像对比栅格包括在开口中具有开口的主体和x射线吸收材料。 可以通过各种微加工技术形成开口，并且可以通过各种涂布和沉积技术在开口中形成x射线吸收材料。 图像对比栅格可以具有轮廓表面，以提高聚焦能力。 图像对比网格可以以两个非正常尺寸去除康普顿散射的X射线。 开口可以形成为在大多数成像模式中不可见的精细结构。

公开(公告)号：US6136210A

公开(公告)日：2000-10-24

申请号：US184483

申请日：1998-11-02

申请人： David K. Biegelsen ,  Scott A. Elrod ,  Raj B. Apte ,  Donald Smith

发明人： David K. Biegelsen ,  Scott A. Elrod ,  Raj B. Apte ,  Donald Smith

IPC分类号： B41J2/015 ,  B41J2/14 ,  B41J2/16 ,  C03C15/00

CPC分类号： B41J2/16 ,  B41J2/14008 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634

摘要： A method of fabricating a lens comprising providing a photosoluble substrate having opposed first and second surfaces; exposing one of the surfaces of the substrate to a photoactive etchant; and exposing said etchant to patterned light such that a convex or concave, generally semi-spherical bulge or recess is formed in said substrate.

摘要翻译： 一种制造透镜的方法，包括提供具有相对的第一和第二表面的可光致衬底; 将衬底的一个表面暴露于光活性蚀刻剂; 并将所述蚀刻剂暴露于图案化的光，使得在所述衬底中形成凸起或凹入的，大体上半球形的凸起或凹部。

公开(公告)号：US6051827A

公开(公告)日：2000-04-18

申请号：US67941

申请日：1998-04-28

申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

IPC分类号： H01L27/146 ,  H01J40/14

CPC分类号： H01L27/14609

摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.

摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供阈值响应。

公开(公告)号：US6005238A

公开(公告)日：1999-12-21

申请号：US67942

申请日：1998-04-28

申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

IPC分类号： H01L27/146 ,  H03F3/08 ,  H01J40/14

CPC分类号： H01L27/14609 ,  H03F3/082

摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Linearization of output response is provided.

摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。 提供输出响应的线性化。

公开(公告)号：US5981959A

公开(公告)日：1999-11-09

申请号：US985891

申请日：1997-12-05

申请人： Raj B. Apte

发明人： Raj B. Apte

IPC分类号： G01T1/20

CPC分类号： G01T1/2018 ,  G01T1/20

摘要： A pixelized scintillation layer is taught in which high aspect ratio columns of scintillation material are formed. The columns may be sized and spaced to correspond to the sizing and spacing of an underlying sensor array, or they may be sized such that there is plurality of columns for each pixel. A method for forming the pixelized scintillation layer includes the step of forming openings such as wells, vias, or channels in a body, for example by etching a thick photoresist, ion beam etching, anodic etching, etc., and the step of filling the openings with scintillation material. A completed image sensing apparatus is also taught.

摘要翻译： 示出了形成闪烁材料的高纵横比列的像素化闪烁层。 这些列的尺寸和间隔可以与底层传感器阵列的尺寸和间距相对应，或者它们的尺寸应使得每个像素有多个列。 用于形成像素化闪烁层的方法包括在体内形成例如孔，通孔或通道的开口的步骤，例如通过蚀刻厚的光致抗蚀剂，离子束蚀刻，阳极蚀刻等，以及填充 带闪烁材料的开口。 还教导了一种完整的图像感测装置。