公开(公告)号：US08546939B2

公开(公告)日：2013-10-01

申请号：US11618207

申请日：2006-12-29

申请人： Kenji Sasaki ,  Tomonori Tanoue ,  Sakae Kikuchi ,  Toshifumi Makino ,  Takeshi Sato ,  Tsutomu Kobori ,  Yasunari Umemoto ,  Takashi Kitahara

发明人： Kenji Sasaki ,  Tomonori Tanoue ,  Sakae Kikuchi ,  Toshifumi Makino ,  Takeshi Sato ,  Tsutomu Kobori ,  Yasunari Umemoto ,  Takashi Kitahara

IPC分类号： H01L23/34 ,  H01L29/66 ,  H01L23/52 ,  H01L23/48 ,  H01L29/40 ,  H03F1/00 ,  H03F3/14 ,  H03F3/04 ,  H03F3/68 ,  H04B1/06 ,  H04B7/00 ,  H04B1/28

CPC分类号： H04B1/28 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/18 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

摘要翻译： 提供了一种技术，使得用于蜂窝电话等的RF模块的尺寸可以减小。 在构成RF模块的布线板上，设置有形成放大器电路的第一半导体芯片和形成用于控制放大器电路的控制电路的第二半导体芯片。 第二半导体芯片上的接合焊盘通过导线直接通过第一半导体芯片上的接合焊盘连接而不使用继电器垫。 在这方面，形成在第一半导体芯片上的焊盘不是正方形，而是矩形（长方形）。

公开(公告)号：US08229373B2

公开(公告)日：2012-07-24

申请号：US11430172

申请日：2006-05-09

申请人： Tomonori Tanoue ,  Hidetoshi Matsumoto

发明人： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC分类号： H01Q11/12

CPC分类号： H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

公开(公告)号：US20100230789A1

公开(公告)日：2010-09-16

申请号：US12724268

申请日：2010-03-15

申请人： Chiko Yorita ,  Yuji Shirai ,  Hirokazu Nakajima ,  Hiroshi Ozaku ,  Tomonori Tanoue ,  Hiroshi Okabe ,  Tsutomu Hara

发明人： Chiko Yorita ,  Yuji Shirai ,  Hirokazu Nakajima ,  Hiroshi Ozaku ,  Tomonori Tanoue ,  Hiroshi Okabe ,  Tsutomu Hara

IPC分类号： H01L23/552 ,  H01L21/78 ,  H01L21/56

CPC分类号： H01L23/66 ,  H01L23/3121 ,  H01L23/3677 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/6644 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/284 ,  H05K9/0084 ,  H05K2201/09036 ,  H05K2201/0909 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A technology is provided which allows a reduction in the size of a semiconductor device without degrading an electromagnetic shielding effect and reliability against reflow heating. After a plurality of components are mounted over a component mounting surface of a module substrate, a resin is formed so as to cover the mounted components. Further, over surfaces (upper and side surfaces) of the resin, a shield layer including a laminated film of a Cu plating film and an Ni plating film is formed. In the shield layer, a plurality of microchannel cracks are formed randomly along grain boundaries and in a net-like configuration without being coupled to each other in a straight line, and form a plurality of paths extending from the resin to a surface of the shield layer by the microchannel cracks.

摘要翻译： 提供了一种技术，其允许减小半导体器件的尺寸而不降低电磁屏蔽效应和不受回流加热的可靠性。 在将多个部件安装在模块基板的部件安装表面上之后，形成树脂以覆盖安装的部件。 此外，树脂的表面（上表面和侧表面）上形成包括Cu镀膜和Ni镀膜的层叠膜的屏蔽层。 在屏蔽层中，沿着晶界和网状构造随机地形成多个微通道裂纹，而不以直线彼此连接，并且形成从树脂延伸到屏蔽层表面的多个路径 层由微通道裂缝。

公开(公告)号：US20090289717A1

公开(公告)日：2009-11-26

申请号：US12412728

申请日：2009-03-27

申请人： Satoshi TANAKA ,  Tomonori TANOUE

发明人： Satoshi TANAKA ,  Tomonori TANOUE

IPC分类号： H03F3/16

CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F3/245 ,  H03F2200/393 ,  H03F2200/451

摘要： An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

摘要翻译： RF功率放大器具有产生RF发射输出信号的最终级放大器级，检测RF发射输出电平的信号检测器，第一检测器，第二检测器和控制电路。 最后一级放大器级包括晶体管和负载元件，并执行饱和型非线性放大和非饱和型线性放大。 第一检测器和控制电路保持RF发射输出信号相对于饱和型非线性放大在天线处的负载变化大致恒定。 第二检测器和控制电路在非饱和型线性放大时相对于天线的过载状态减小了最终级晶体管的输出电压的增加。

公开(公告)号：US07547929B2

公开(公告)日：2009-06-16

申请号：US11247234

申请日：2005-10-12

申请人： Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

发明人： Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

IPC分类号： H01L29/40

CPC分类号： H01L23/482 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

摘要翻译： 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。

公开(公告)号：US07482875B2

公开(公告)日：2009-01-27

申请号：US11209691

申请日：2005-08-24

申请人： Tomonori Tanoue ,  Masami Ohnishi

发明人： Tomonori Tanoue ,  Masami Ohnishi

IPC分类号： H03F3/04

CPC分类号： H03F1/26 ,  H01L2924/0002 ,  H03F1/42 ,  H03F3/04 ,  H03F3/195 ,  H03F2200/36 ,  H01L2924/00

摘要： The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.

摘要翻译： 本发明提供了宽带，低噪声，小尺寸的高频功率放大器，其具有较小的增益温度依赖性，输入匹配性优异。 由电阻强烈依赖于温度的电阻和常规电阻构成的并联电路串联插入到放大单元的输入匹配电路中的信号路径中，并且电阻器的电阻被设置为适当的值，例如约2 / 3倍于放大单元的输入阻抗。

公开(公告)号：US07368996B2

公开(公告)日：2008-05-06

申请号：US11209692

申请日：2005-08-24

申请人： Tomonori Tanoue ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Akira Kuriyama

发明人： Tomonori Tanoue ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Akira Kuriyama

IPC分类号： H03F3/45

CPC分类号： H03F3/191 ,  H03F1/26 ,  H03F3/24 ,  H03F3/45085 ,  H03F2200/09 ,  H03F2200/315 ,  H03F2200/318 ,  H03F2200/372 ,  H03F2200/391 ,  H03F2203/45638 ,  H03G1/0023 ,  H03G3/3042

摘要： Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

摘要翻译： 公开了具有高度稳定和优异的可控性的功率放大器，并且与常规功率放大器相比具有低噪声。 使用功率放大器，在其初始阶段提供由晶体管Q 1，Q 2组成的差分放大器，并且平衡 - 不平衡变换器作为由Cp 1，Cp 2，Lp 1和Ct 1组成的级间匹配电路， Ct 2，Lt 1分别设置在初级和第二级之间，而在第二级提供不平衡单端电路。 差分放大器具有用于将两个发射极彼此耦合的发射极耦合型配置，并且通过改变耦合到两个发射极的电流源的电流来执行初始阶段放大器的输出控制。

公开(公告)号：US20070046370A1

公开(公告)日：2007-03-01

申请号：US11489609

申请日：2006-07-20

申请人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

发明人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

IPC分类号： H03G3/10

CPC分类号： H03G3/3042 ,  H03F1/30 ,  H03F3/189 ,  H03F3/68 ,  H03G3/3047

摘要： In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

摘要翻译： 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。

公开(公告)号：US20060267688A1

公开(公告)日：2006-11-30

申请号：US11430172

申请日：2006-05-09

申请人： Tomonori Tanoue ,  Hidetoshi Matsumoto

发明人： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC分类号： H03G3/00

CPC分类号： H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

摘要翻译： 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的AC电压振幅，并且当电压幅度超过预定阈值时，抑制功率放大器的输入信号幅度。

公开(公告)号：US07067857B2

公开(公告)日：2006-06-27

申请号：US10788277

申请日：2004-03-01

申请人： Kazuhiro Mochizuki ,  Isao Ohbu ,  Tomonori Tanoue ,  Chisaki Takubo ,  Kenichi Tanaka

发明人： Kazuhiro Mochizuki ,  Isao Ohbu ,  Tomonori Tanoue ,  Chisaki Takubo ,  Kenichi Tanaka

IPC分类号： H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L27/0823 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/16152 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/05599

摘要： The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.

摘要翻译： 本发明的要点如下：在使用异质结双极晶体管（HBT）的单片微波积分电路（MMIC）中，从MMIC的底部分别形成用于发射极，基极和集电极的通孔。 通孔中的一个位于与HBT相对的位置。 用于不与HBT相对的另一个通孔的相应顶侧电极设置成与MMIC衬底接触。