公开(公告)号：US20130068391A1

公开(公告)日：2013-03-21

申请号：US13608389

申请日：2012-09-10

申请人： John J. Mazzocco ,  Dale Robert Du Bois ,  Juan Carlos Rocha-Alvarez

发明人： John J. Mazzocco ,  Dale Robert Du Bois ,  Juan Carlos Rocha-Alvarez

IPC分类号： E06B11/02 ,  B05C11/00 ,  C23C16/44

CPC分类号： C23C14/56 ,  C23C16/54 ,  F16K3/0218 ,  F16K3/0254 ,  F16K3/16 ,  F16K3/22 ,  F16K3/314 ,  F16K51/02

摘要： Slit valve apparatuses are described. In one aspect, a slit valve apparatus is disclosed having a gate with at least one sealing surface, a blocker element, and a connector member that structurally connects the gate and the blocker element. Systems and methods including the slit valve apparatus are also disclosed, as are numerous other aspects.

摘要翻译： 描述了狭缝阀装置。 在一个方面，公开了一种狭缝阀装置，其具有至少一个密封表面的门，阻塞件，以及在结构上连接门和阻挡元件的连接器构件。 还公开了包括狭缝阀装置的系统和方法，以及许多其它方面。

公开(公告)号：US08343881B2

公开(公告)日：2013-01-01

申请号：US12794713

申请日：2010-06-04

申请人： Yong-Won Lee ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Li-Qun Xia ,  Prahallad Iyengar ,  Sanjeev Baluja ,  Scott A Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Derek R Witty

发明人： Yong-Won Lee ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Li-Qun Xia ,  Prahallad Iyengar ,  Sanjeev Baluja ,  Scott A Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Derek R Witty

IPC分类号： H01L29/06 ,  H01L21/31 ,  C23C16/448

CPC分类号： H01L21/02271 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/0332 ,  H01L21/76898

摘要： A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.

摘要翻译： 使用包含BDEAS和含氧气体如臭氧的工艺气体将二氧化硅层沉积到衬底上。 二氧化硅层可以是包括抗蚀剂层的抗蚀刻堆叠的一部分。 在另一个版本中，二氧化硅层被沉积到通孔中以形成用于通硅通孔的氧化物衬垫。

公开(公告)号：US20120187534A1

公开(公告)日：2012-07-26

申请号：US13011946

申请日：2011-01-24

申请人： Bo Xie ,  Alexandros T. Demos ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja

发明人： Bo Xie ,  Alexandros T. Demos ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja

IPC分类号： H01L29/02 ,  H01L21/28

CPC分类号： H01L28/40 ,  H01L21/3105 ,  H01L28/90

摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.

摘要翻译： 本发明提供用于制造存储单元的系统，方法和装置。 本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。 公开了许多附加方面。

公开(公告)号：US08203126B2

公开(公告)日：2012-06-19

申请号：US12841935

申请日：2010-07-22

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： G01N21/00 ,  G01N21/33 ,  B01J19/08 ,  B29C35/08

CPC分类号： B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US07947611B2

公开(公告)日：2011-05-24

申请号：US12170248

申请日：2008-07-09

申请人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

发明人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。

公开(公告)号：US20100285240A1

公开(公告)日：2010-11-11

申请号：US12841935

申请日：2010-07-22

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： B05D3/06

CPC分类号： B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US07777198B2

公开(公告)日：2010-08-17

申请号：US11686881

申请日：2007-03-15

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： H01J37/20

CPC分类号： B05D3/0209 ,  B05D3/0493 ,  B05D3/067 ,  H01L21/31058 ,  H01L21/67115

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20090305515A1

公开(公告)日：2009-12-10

申请号：US12134413

申请日：2008-06-06

申请人： Dustin Ho ,  Scott Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Thomas Nowak

发明人： Dustin Ho ,  Scott Hendrickson ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Thomas Nowak

IPC分类号： H01L21/31 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/3105

摘要： Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment.

摘要翻译： 本发明的实施方案一般涉及用于固化沉积在基板表面中的沟槽或间隙中的电介质材料以产生无空隙和接缝的特征的方法和装置。 在一个实施例中，电介质材料在暴露于紫外线辐射的同时进行蒸汽退火。 在一个实施例中，电介质材料在氮气环境中进一步热退火。

公开(公告)号：US07566891B2

公开(公告)日：2009-07-28

申请号：US11686878

申请日：2007-03-15

申请人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

发明人： Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Dale R. Du Bois ,  Sanjeev Baluja ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Andrzei Kaszuba ,  Tom K. Cho

IPC分类号： G01N21/00 ,  G01N21/33 ,  B01J19/08 ,  B29C35/08

CPC分类号： B05D3/067

摘要： Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

摘要翻译： 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20090162259A1

公开(公告)日：2009-06-25

申请号：US12393851

申请日：2009-02-26

申请人： Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'saad

发明人： Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Andrzej Kaszuba ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Sanjeev Baluja ,  Tom Cho ,  Josephine Chang ,  Hichem M'saad

IPC分类号： B01J19/08

CPC分类号： B05D3/067 ,  B05D3/0209 ,  B05D3/0493 ,  H01L21/31058

摘要： An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV sources per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV sources can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

摘要翻译： 紫外线（UV）固化室可固化设置在基底上的电介质材料并进行原位清洁。 串联处理室提供由覆盖有盖的主体限定的两个单独的和相邻的过程区域，所述盖子具有分别位于每个处理区域上方的窗口。 每个处理区域的一个或多个UV源被耦合到盖的壳体覆盖，将通过窗口的UV光发射到位于处理区域内的衬底上。 UV源可以是利用诸如微波或射频之类的源的发光二极管或灯泡阵列。 紫外光可以在固化过程中被脉冲。 使用远程生成的氧自由基/臭氧和/或原位实现清洁室。 灯阵列的使用，基板和灯头的相对运动以及灯反射器形状和/或位置的实时修改可以增强基板照明的均匀性。