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公开(公告)号：US20200171426A1
公开(公告)日：2020-06-04
申请号：US16611417
申请日：2019-01-22
Inventor： Guangyao LI , Guangcai YUAN , Dongfang WANG , Jun WANG , Qinghe WANG , Wei LI , Leilei CHENG
Abstract: The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.
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52.发明申请公开(公告)号：US20200161196A1
公开(公告)日：2020-05-21
申请号：US16452952
申请日：2019-06-26
Inventor： Yingbin HU , Ce ZHAO , Yuankui DING , Wei SONG , Jun WANG , Yang ZHANG , Wei LI , Liangchen YAN
IPC: H01L21/66 , H01L29/66 , H01L21/44 , H01L21/467 , G03F7/20
Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
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