公开(公告)号：US07745094B2

公开(公告)日：2010-06-29

申请号：US11702658

申请日：2007-02-06

申请人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda

发明人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/114

摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过含有氟化降冰片烷基的三种硅烷单体和具有酸不稳定基团保护的羧基的有机基团和含有内酯环的有机基团的混合物的共水解缩合而获得。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

公开(公告)号：US07638260B2

公开(公告)日：2009-12-29

申请号：US11987333

申请日：2007-11-29

申请人： Akihiro Seki ,  Shigeo Tanaka ,  Katsuya Takemura ,  Tsunehiro Nishi

发明人： Akihiro Seki ,  Shigeo Tanaka ,  Katsuya Takemura ,  Tsunehiro Nishi

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/111

摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a pattern with a minimal line edge roughness.

摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含特定重复单元的聚合物。 当通过ArF光刻处理时，组合物的分辨率提高，并形成具有最小线边缘粗糙度的图案。

公开(公告)号：US07550247B2

公开(公告)日：2009-06-23

申请号：US11205980

申请日：2005-08-18

申请人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda ,  Toshihiko Fujii

发明人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda ,  Toshihiko Fujii

IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/36

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/108

摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过在近邻碳原子上含有具有羟基并且具有至少3个氟原子的有机基团的三种硅烷单体的混合物的共水解缩合获得，所述有机基团具有羧基被保护的有机基团 酸不稳定基团和含内酯环的有机基团。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

公开(公告)号：US20070122741A1

公开(公告)日：2007-05-31

申请号：US11604695

申请日：2006-11-28

申请人： Jun Hatakeyama ,  Katsuya Takemura

发明人： Jun Hatakeyama ,  Katsuya Takemura

IPC分类号： G03C1/00

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： A pattern-forming process uses a resist protective coating material comprising a C8-C12 ether compound as a solvent. A resist protective coating formed on a resist film is water-insoluble, soluble in an alkaline developer, and unmixable with the resist film, and thus the immersion lithography can be performed. During alkaline development, development of the resist film and removal of the protective coating can be achieved in a single step at the same time.

摘要翻译： 图案形成方法使用包含C 8 -C 12 -C 12醚化合物作为溶剂的抗蚀剂保护涂层材料。 形成在抗蚀剂膜上的抗蚀剂保护涂层是水不溶性的，可溶于碱性显影剂，并且与抗蚀剂膜不可混合，因此可以进行浸渍光刻。 在碱性显影过程中，可以在一个步骤中同时实现抗蚀剂膜的显影和保护涂层的去除。

公开(公告)号：US20060073413A1

公开(公告)日：2006-04-06

申请号：US11242270

申请日：2005-10-04

申请人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

发明人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

IPC分类号： G03C1/76

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.

公开(公告)号：US06737214B2

公开(公告)日：2004-05-18

申请号：US09800512

申请日：2001-03-08

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Katsuya Takemura ,  Wataru Kusaki ,  Akihiro Seki

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115

摘要： A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

摘要翻译： 包含Mw为1000-500,000的聚羟基苯乙烯衍生物和Mw为1000-500,000的羟基苯乙烯和（甲基）丙烯酸酯的共聚物的聚合物混合物作为基础树脂的化学放大正性抗蚀剂组合物具有改善的耐干蚀刻性， 高灵敏度，高分辨率和工艺适应性，并且在用碱性水溶液显影后抑制图案膜的减薄。

公开(公告)号：US5972559A

公开(公告)日：1999-10-26

申请号：US884503

申请日：1997-06-27

申请人： Satoshi Watanabe ,  Katsuya Takemura ,  Shigehiro Nagura

发明人： Satoshi Watanabe ,  Katsuya Takemura ,  Shigehiro Nagura

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin in the form of a polyhydroxystyrene having some hydroxyl groups replaced by acid labile groups and a Mw of 3,000-300,000, (C) a photoacid generator, and (D) an aromatic compound having a group: --R.sup.13 --COOH in a molecule. The resist composition is sensitive to actinic radiation, especially KrF excimer laser and X-ray, has high sensitivity, resolution, and plasma etching resistance, and is effective for improving the footing and PED on nitride substrates.

摘要翻译： 通过将（A）有机溶剂，（B）具有由酸不稳定基团取代的一些羟基的聚羟基苯乙烯形式的基础树脂和3,000-300,000的Mw（C）共混制备化学放大正性抗蚀剂组合物 光生酸发生剂，（D）分子中具有-R13-COOH基团的芳香族化合物。 抗蚀剂组合物对光化辐射敏感，特别是KrF准分子激光和X射线，具有高灵敏度，分辨率和等离子体耐蚀刻性，对于改善氮化物衬底上的基脚和PED是有效的。

公开(公告)号：US5847218A

公开(公告)日：1998-12-08

申请号：US811530

申请日：1997-03-04

申请人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

发明人： Youichi Ohsawa ,  Satoshi Watanabe ,  Junji Shimada ,  Katsuya Takemura ,  Shigehiro Nagura ,  Toshinobu Ishihara

IPC分类号： C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  C07C211/44

CPC分类号： C07C381/12 ,  G03F7/0045

摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.

摘要翻译： 本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。 新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。 当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。 锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

公开(公告)号：US5759739A

公开(公告)日：1998-06-02

申请号：US635856

申请日：1996-04-22

申请人： Katsuya Takemura ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Minoru Shigemitsu ,  Ken'ichi Itoh

发明人： Katsuya Takemura ,  Toshinobu Ishihara ,  Kazumasa Maruyama ,  Yoshihumi Takeda ,  Minoru Shigemitsu ,  Ken'ichi Itoh

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  G03C1/73

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111

摘要： A resist composition comprising an alkali-soluble resin, typically a partially t-butoxycarbonylated polyhydroxystyrene, a p-butoxystyrene/t-butylacrylate copolymer or p-butoxystyrene/maleic anhydride copolymer as a dissolution inhibitor, and a iodonium or sulfonium salt as a photoacid generator is effective for forming a resist film which can be precisely and finely patterned using high energy radiation such as a KrF excimer laser.

摘要翻译： 抗蚀剂组合物，其包含碱溶性树脂，通常为部分叔丁氧基羰基化的聚羟基苯乙烯，作为溶解抑制剂的对丁氧基苯乙烯/叔丁基丙烯酸酯共聚物或对丁氧基苯乙烯/马来酸酐共聚物，以及作为光酸产生剂的碘鎓盐或锍盐 对于形成可以使用高能辐射如KrF准分子激光器精确和精细地图案化的抗蚀剂膜是有效的。

公开(公告)号：US5580936A

公开(公告)日：1996-12-03

申请号：US536119

申请日：1995-09-29

申请人： Junji Tsuchiya ,  Katsuya Takemura ,  Osamu Watanabe ,  Yoshihumi Takeda ,  Toshinobu Ishihara

发明人： Junji Tsuchiya ,  Katsuya Takemura ,  Osamu Watanabe ,  Yoshihumi Takeda ,  Toshinobu Ishihara

IPC分类号： C08F8/00 ,  C08F8/14 ,  C08F12/00 ,  C08F212/14 ,  G03F7/027

CPC分类号： C08F8/12 ,  C08F2800/20

摘要： A partially tert-butoxylated poly(p-hydroxystyrene) is prepared by subjecting poly(p-tert-butoxystyrene) to reaction of eliminating some of the tert-butoxy groups in an organic solvent at a temperature of 30.degree.-100.degree. C. in the presence of an acid catalyst at a molar ratio of acid catalyst/t-BuO group of from 0.050 to 2.0. During the elimination reaction, a change of solubility of the resulting partially tert-butoxylated poly(p-hydroxystyrene) is determined to calculate a degree of elimination of tert-butoxy groups. The reaction is terminated when a desired degree of elimination is reached. Through a simple process, partially tert-butoxylated poly(p-hydroxystyrene) having a well controlled t-BuO content is produced in high yields.

摘要翻译： 通过使聚（对叔丁氧基苯乙烯）在有机溶剂中在30℃-100℃的温度下除去一些叔丁氧基进行反应来制备部分叔丁氧基化的聚（对羟基苯乙烯） 酸催化剂/ t-BuO基团的摩尔比为0.050至2.0的酸催化剂的存在。 在消除反应期间，测定所得部分叔丁氧基化聚（对羟基苯乙烯）的溶解度的变化，以计算叔丁氧基的消除程度。 当达到所需的消除程度时，终止反应。 通过简单的方法，产生具有良好控制的t-BuO含量的部分叔丁氧基化聚（对羟基苯乙烯），产率高。