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51.发明授权Methods and apparatus for improved read sensors using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer 失效使用具有氮化镍 - 钽层的多层种子层结构的改进的读取传感器的方法和装置公开(公告)号：US07397640B2
公开(公告)日：2008-07-08
申请号：US11231045
申请日：2005-09-20
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetic head with improved hard magnet properties includes a sensor stack structure and a multi-layered seed layer structure formed over crystalline materials of the sensor stack structure. The multi-layered structure has a first layer including chromium-molybdenum (CrMo); a second layer including nitrogenated nickel-tantalum (NiTa+N); and a third layer including chromium-molybdenum (CrMo). A hard bias layer formed over the multi-layered structure is preferably cobalt-platinum-chromium (CoPtCr). Methods of making the magnetic head are also described.
摘要翻译： 具有改善的硬磁性能的磁头包括在传感器堆叠结构的结晶材料上形成的传感器堆叠结构和多层种子层结构。 多层结构具有包括铬 - 钼（CrMo）的第一层; 包含氮化的镍 - 钽（NiTa + N）的第二层; 和包含铬 - 钼（CrMo）的第三层。 在多层结构上形成的硬偏置层优选为钴 - 铂 - 铬（CoPtCr）。 还描述了制造磁头的方法。
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公开(公告)号：US20080151439A1
公开(公告)日：2008-06-26
申请号：US11848091
申请日：2007-08-30
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11B5/3909
摘要： A tunnel junction magnetoresistive sensor having improved TMR performance (dR/R) and improved area resistance. The sensor includes a barrier layer sandwiched between a magnetic pinned layer structure and a magnetic free layer structure. The barrier layer includes a thin layer of Mg and a layer of MgOx. The barrier layer could also include a second thin layer of Mg such that the MgOx layer is sandwiched between the first and second Mg layers.
摘要翻译： 具有改进的TMR性能（dR / R）和改进的面积电阻的隧道结磁阻传感器。 传感器包括夹在磁性固定层结构和磁性自由层结构之间的阻挡层。 阻挡层包括一薄层的Mg和一层MgO。 阻挡层还可以包括Mg的第二薄层，使得MgO x层被夹在第一和第二Mg层之间。
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53.发明授权Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling 失效使用部分铣削制造具有成形的读取传感器偏置层结的读取头的方法公开(公告)号：US07367110B2
公开(公告)日：2008-05-06
申请号：US10952427
申请日：2004-09-27
IPC分类号： G11B5/187
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.
摘要翻译： 一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有形状的结。 该方法包括提供待成形的分层晶片叠层。 没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。 分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。 然后沉积与晶片叠层的成形结接触的硬偏压层。
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54.发明授权公开(公告)号：US07241697B2
公开(公告)日：2007-07-10
申请号：US11176023
申请日：2005-07-07
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G11B5/3116 , G11B5/3163
摘要： A process for defining and controlling the track width for sensor devices is disclosed. An RIE-resistant, image layer, such as Cu or NiFe, is deposited after the DLC layer. A combination of RIE and ion milling processes or reactive ion beam etching processes are used to form the mask structure. Having an RIE-resistant layer precisely defines the DLC edge and minimizes the line edge roughness that result from fast removal of duramide during RIE. This solution controls the formation of the edges of the sensors and provides good definition for DLC mask edges. The image layer may be chemical mechanical polished to eliminate ion milling before the final RIE step.
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55.发明授权Method of making a tunnel valve sensor with improved free layer sensitivity 有权制造具有改善的自由层灵敏度的隧道阀传感器的方法公开(公告)号：US07088561B2
公开(公告)日：2006-08-08
申请号：US11069411
申请日：2005-02-28
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967
摘要： A tunnel junction having reduced free layer coercivity for improved sensitivity. The tunnel valve has a free layer that has been deposited in the presence of a nitrogen gas, which reduces the coercivity of the free layer, thereby improving the sensor's sensitivity and performance.
摘要翻译： 具有降低的自由层矫顽力以提高灵敏度的隧道结。 隧道阀具有在氮气存在下沉积的自由层，这降低了自由层的矫顽力，从而提高了传感器的灵敏度和性能。
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公开(公告)号：US08393073B2
公开(公告)日：2013-03-12
申请号：US12177069
申请日：2008-07-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
摘要翻译： 一种用于构造磁阻传感器的方法，其在传感器定义期间避免掩模结构的遮蔽效应。 该方法包括使用沉积在其上的抗反射涂层（ARC）和感光掩模。 形成光敏掩模以覆盖所需的传感器区域，使非传感器区域暴露。 执行反应离子蚀刻以将感光掩模的图案转移到下面的ARC层上。 反应离子蚀刻（RIE）以相对高的压板功率进行。 较高的压板功率增加晶片的离子轰击，从而增加相对于化学组分的材料去除的物理（即机械）组分。 材料去除的物理组分的这种增加导致感光掩模材料相对于耐磨离子磨损掩模的去除速率增加。 这避免了球形或蘑菇状光致抗蚀剂掩模的形成，因此避免了后续制造过程中的阴影效应。
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57.发明授权Magnetic head having CPP sensor with improved biasing for free magnetic layer 有权具有CPP传感器的磁头，具有改进的自由磁性层偏置公开(公告)号：US08031442B2
公开(公告)日：2011-10-04
申请号：US11888733
申请日：2007-08-01
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932
摘要： A magnetic head for a hard disk drive having a CPP read head sensor that includes a layered sensor stack including a free magnetic layer and hard bias elements that are disposed on the sides of the free magnetic layer to provide a biasing magnetization for the free magnetic layer. To increase the coercivity of the hard bias elements, and thereby improve the biasing of the magnetization of the free magnetic layer, the ratio (t/H) of the thickness t to the height H of the hard bias elements is fabricated to be within the range of from approximately 1 to approximately 1/15.
摘要翻译： 一种用于具有CPP读取头传感器的硬盘驱动器的磁头，其包括分层传感器堆叠，该分层传感器堆叠包括自由磁性层和设置在自由磁性层的侧面上以提供自由磁性层的偏置磁化强度的硬偏置元件 。 为了增加硬偏置元件的矫顽力，从而改善自由磁性层的磁化偏置，将厚度t与硬偏置元件的高度H的比（t / H）制成在 范围从大约1到大约1/15。
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公开(公告)号：US07920363B2
公开(公告)日：2011-04-05
申请号：US11848091
申请日：2007-08-30
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11B5/3909
摘要： A tunnel junction magnetoresistive sensor having improved TMR performance (dR/R) and improved area resistance. The sensor includes a barrier layer sandwiched between a magnetic pinned layer structure and a magnetic free layer structure. The barrier layer includes a thin layer of Mg and a layer of MgOx. The barrier layer could also include a second thin layer of Mg such that the MgOx layer is sandwiched between the first and second Mg layers.
摘要翻译： 具有改进的TMR性能（dR / R）和改进的面积电阻的隧道结磁阻传感器。 传感器包括夹在磁性固定层结构和磁性自由层结构之间的阻挡层。 阻挡层包括Mg的薄层和MgO x层。 阻挡层还可以包括Mg的第二薄层，使得MgO x层夹在第一和第二Mg层之间。
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59.发明授权Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process 失效使用反应离子铣削工艺制造用于磁头的改进的传感器的方法公开(公告)号：US07444739B2
公开(公告)日：2008-11-04
申请号：US11095979
申请日：2005-03-30
CPC分类号： G11B5/3903 , G11B5/3163 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.
摘要翻译： 一种磁头制造工艺，其中模版层沉积在多个传感器层上。 在模板层上制造具有所需读取磁道宽度的光致抗蚀剂掩模。 然后进行反应离子研磨步骤以去除模板层的未掩模部分。 当模版层由有机化合物如Duramide和/或类金刚石碳构成时，利用氧气的反应离子研磨步骤产生具有非常直的侧壁的本发明的蜡纸，实际上没有底切。 此后，进行离子研磨步骤，其中未被模板覆盖的传感器层被去除。 准确地形成的模板导致剩余的中央传感器层的相应精确地形成的侧壁。 因此制造了具有期望的读取磁道宽度和精确形成的侧壁的磁头传感器结构。
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公开(公告)号：US07436637B2
公开(公告)日：2008-10-14
申请号：US11244675
申请日：2005-10-05
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3106 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having a hard magnetic layer extending from the stripe height of the pinned layer to assist in pinning the pinned layer. The pinned layer extends beyond the stripe height of the free layer so that the back stripe height edge of the pinned layer is significantly beyond the stripe height edge of the free layer. The pinned layer is preferably constructed to have a net magnetic moment such that magnetostatic coupling between the hard magnetic layer and the pinned layer pins the moment of the layers. The hard magnetic layer can be used in addition to or in lieu of an AFM pinning layer.
摘要翻译： 磁阻传感器，其具有从被钉扎层的条纹高度延伸的硬磁性层，以有助于固定钉扎层。 被钉扎层延伸超过自由层的条纹高度，使得被钉扎层的后条纹高度边缘显着超出自由层的条纹高度边缘。 钉扎层优选构造成具有净磁矩，使得硬磁性层和被钉扎层之间的静磁耦合引导层的时刻。 除了AFM钉扎层之外还可以使用硬磁性层。
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