公开(公告)号：US08500281B2

公开(公告)日：2013-08-06

申请号：US12762484

申请日：2010-04-19

申请人： Chang Geun Ahn ,  Rae Man Park ,  Gun Yong Sung ,  Seon Hee Park

发明人： Chang Geun Ahn ,  Rae Man Park ,  Gun Yong Sung ,  Seon Hee Park

IPC分类号： A61B3/14 ,  A61B3/10

CPC分类号： A61B3/113 ,  G06K9/00604

摘要： There is provided an apparatus for irradiating a beam at a user's eye gaze point and an operation method thereof. The apparatus includes an eye gaze point detecting part analyzing a movement of a user's pupils and detecting the user's eye gaze point, and a beam irradiation part irradiating a beam at the user's eye gaze point detected by the eye gaze point detecting part. The apparatus detects the user's current eye gaze point and irradiates the beam at the user's detected eye gaze point, thereby allowing for the performance of desired control with greater accuracy.

摘要翻译： 提供了一种用户的眼睛注视点照射光束的装置及其操作方法。 该装置包括分析用户瞳孔的移动并检测用户的眼睛注视点的眼睛凝视点检测部分，以及在眼睛凝视点检测部分检测到的用户的眼睛注视点照射束的束照射部。 该装置检测用户当前的眼睛凝视点，并在用户检测到的眼睛注视点处照射光束，从而以更高的精度执行所需控制。

公开(公告)号：US08222055B2

公开(公告)日：2012-07-17

申请号：US12613869

申请日：2009-11-06

申请人： Tae Youb Kim ,  Nae Man Park ,  Kyung Hyun Kim ,  Gun Yong Sung

发明人： Tae Youb Kim ,  Nae Man Park ,  Kyung Hyun Kim ,  Gun Yong Sung

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  C23C16/30 ,  C23C16/345 ,  H01L33/08 ,  H01L33/18 ,  Y10S977/773

摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.

摘要翻译： 提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。 发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。 由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

公开(公告)号：US20110101244A1

公开(公告)日：2011-05-05

申请号：US12845148

申请日：2010-07-28

申请人： Moon Youn JUNG ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo ,  Seon-Hee Park ,  Gun Yong Sung

发明人： Moon Youn JUNG ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo ,  Seon-Hee Park ,  Gun Yong Sung

IPC分类号： A61N5/00 ,  B32B15/04 ,  C23C16/00 ,  H05H1/24

CPC分类号： H05H6/00 ,  A61N5/10 ,  A61N2005/1087 ,  A61N2005/1088 ,  C23C16/24

摘要： Provided is a treatment apparatus including a target material for generating protons. The treatment apparatus includes a cylindrical bore member having an inner space to receive a patient; a proton generating target material provided to an inner surface of the bore member; and a laser adapted to supply a laser beam to the proton generating target material so that protons are generated from the proton generating target material and projected to a tumor site of the patient. The proton generating target material includes a supporting film and a hydrogenated amorphous silicon (a-Si:H) film provided on the supporting film.

摘要翻译： 提供了包括用于产生质子的靶材料的处理装置。 处理装置包括具有用于接收患者的内部空间的圆柱形孔构件; 设置在所述孔构件的内表面上的质子产生靶材料; 以及适于将激光束提供给质子产生靶材料的激光，使得质子从质子产生靶材料产生并投射到患者的肿瘤部位。 质子产生靶材料包括支撑膜和设置在支撑膜上的氢化非晶硅（a-Si：H）膜。

公开(公告)号：US6004907A

公开(公告)日：1999-12-21

申请号：US119394

申请日：1998-07-21

申请人： Jeong Dae Suh ,  Gun Yong Sung

发明人： Jeong Dae Suh ,  Gun Yong Sung

IPC分类号： H01L39/22 ,  H01L39/24

CPC分类号： H01L39/2496 ,  Y10S505/702

摘要： The present invention forms a superconducting junction using a cubic YBa.sub.2 Cu.sub.3 Ox thin film as a barrier layer. The present invention forms a first YBCO superconducting thin film, a SrTiO.sub.3 insulating layer thin film on the substrate, etches a side of them in the form of inclination, subsequently integrates a non-superconducting cubic YBCO barrier thin film, a second YBCO superconducting thin film, a SrTiO.sub.3 protecting layer thin film in series on the whole surface of the substrate, etches an opposite side of the etched part of the SrTiO.sub.3 insulating layer thin film in the form of inclination, fabricates a superconducting junction by forming a metal electrode to said aperture after forming apertures which expose said first YBCO superconducting thin film, the second YBCO superconducting thin film, fabricates a superconducting junction upon forming the metallic electrode to the apertures, and deposits a cubic YBa.sub.2 Cu.sub.3 Ox barrier thin film at a temperature of 600-650.degree. C. and a depositing velocity of 6.5-12.2 nm/s.

摘要翻译： 本发明使用立方YBa2Cu3Ox薄膜作为阻挡层形成超导结。 本发明在衬底上形成第一YBCO超导薄膜，SrTiO3绝缘层薄膜，以斜面的形式蚀刻它们的一面，随后将非超导立方YBCO阻挡薄膜，第二YBCO超导薄膜 ，在基板的整个表面上串联的SrTiO3保护层薄膜，以倾斜的形式蚀刻SrTiO 3绝缘层薄膜的蚀刻部分的相对侧，通过在所述孔径上形成金属电极来制造超导结 在形成暴露所述第一YBCO超导薄膜的孔之后，第二YBCO超导薄膜在向孔隙形成金属电极时制造超导结，并在600-650℃的温度下沉积立方YBa2Cu3Ox势垒薄膜。 并且沉积速度为6.5-12.2nm / s。

公开(公告)号：US07791095B2

公开(公告)日：2010-09-07

申请号：US10572486

申请日：2005-08-05

申请人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/38

摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.

摘要翻译： 提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极 硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射 层以进一步提高发光二极管的发光效率。

公开(公告)号：US06998643B2

公开(公告)日：2006-02-14

申请号：US10923230

申请日：2004-08-20

申请人： Taeyoub Kim ,  Nae Man Park ,  Gun Yong Sung

发明人： Taeyoub Kim ,  Nae Man Park ,  Gun Yong Sung

IPC分类号： H01L27/15

CPC分类号： H01L33/34 ,  H01L33/105 ,  H01L33/24 ,  H01L33/465

摘要： A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.

摘要翻译： 硅基发光二极管同时采用掺杂层和分布式布拉格反射器（DBR）。 硅基发光二极管包括具有相对于第一侧和第二侧的有源层。 第一反射部分面向有源层的第一侧，并且第二反射部分面向有源层的第二侧。 第一掺杂层介于有源层和第一反射部分之间。 第二掺杂层介于有源层和第二反射部分之间。 第一电极可电连接到第一掺杂层，第二电极可电连接到第二掺杂层。 这里，第一反射部和第二反射部中的至少一个具有通过交替堆叠两种不同构成的含硅绝缘层和栅极而形成的DBR。

公开(公告)号：US06423473B1

公开(公告)日：2002-07-23

申请号：US09389458

申请日：1999-09-03

申请人： Gun Yong Sung ,  Jun Sik Hwang ,  Kwang Yong Kang

发明人： Gun Yong Sung ,  Jun Sik Hwang ,  Kwang Yong Kang

IPC分类号： G03F700

CPC分类号： H01L39/2496

摘要： A method for fabricating a high temperature superconducting step-edge Josephson junction includes the steps of: (i) preparing a step-edge on an SrTiO3 (STO) substrate; (ii) depositing a YBa2Cu3O7−x (YBCO) thin film on the step-edge substrate obtained; and (iii) forming a micro-bridge pattern on the, deposited metal thin film by photolithography and ion milling and then performing a heat treatment. This makes it possible to fabricate a step edge having a linear portion inclined at a large angle with good reproducibility during the ion-milling step. Furthermore, the two-stepped process of post heat treatment is carried out after the metal electrode of the junction is formed so that the high temperature superconducting step-edge junction can have its own characteristics enhanced.

摘要翻译： 一种用于制造高温超导阶梯边缘约瑟夫逊结的方法包括以下步骤：（i）在SrTiO 3（STO）衬底上制备阶梯边; （ii）在获得的步进边缘基板上沉积YBa2Cu3O7-x（YBCO）薄膜; 和（iii）通过光刻和离子研磨在沉积的金属薄膜上形成微桥图案，然后进行热处理。 这使得可以在离子研磨步骤期间以良好的再现性制造具有以大角度倾斜的直线部分的台阶边缘。 此外，在形成结的金属电极之后进行后热处理的两阶段处理，使得高温超导步进边缘连接可以具有增强的其自身特性。

公开(公告)号：US20110043758A1

公开(公告)日：2011-02-24

申请号：US12762484

申请日：2010-04-19

申请人： Chang Geun AHN ,  Rae Man Park ,  Gun Yong Sung ,  Seon Hee Park

发明人： Chang Geun AHN ,  Rae Man Park ,  Gun Yong Sung ,  Seon Hee Park

IPC分类号： A61B3/113

CPC分类号： A61B3/113 ,  G06K9/00604

摘要： There is provided an apparatus for irradiating a beam at a user's eye gaze point and an operation method thereof. The apparatus includes an eye gaze point detecting part analyzing a movement of a user's pupils and detecting the user's eye gaze point, and a beam irradiation part irradiating a beam at the user's eye gaze point detected by the eye gaze point detecting part. The apparatus detects the user's current eye gaze point and irradiates the beam at the user's detected eye gaze point, thereby allowing for the performance of desired control with greater accuracy.

摘要翻译： 提供了一种用户的眼睛注视点照射光束的装置及其操作方法。 该装置包括分析用户瞳孔的移动并检测用户的眼睛注视点的眼睛凝视点检测部分，以及在眼睛凝视点检测部分检测到的用户的眼睛注视点照射束的束照射部。 该装置检测用户当前的眼睛凝视点，并在用户检测到的眼睛注视点处照射光束，从而以更高的精度执行所需控制。

公开(公告)号：US20080296593A1

公开(公告)日：2008-12-04

申请号：US12096610

申请日：2006-06-16

申请人： Nae Man Park ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Nae Man Park ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/26 ,  H01L33/34 ,  H01L33/42

摘要： Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid.

摘要翻译： 提供了一种高效率的硅发光器件，其包括改进的结构，通过该结构，比传统的发光器件朝向发光器件的侧面发射更多的光朝向其正面发射，以便提高亮度。 硅发光器件包括衬底，形成在衬底上的多个发光结构，每个发光结构包括有源层，以及金属电极，其包括形成在衬底下方的下金属电极和形成在其上的上金属电极 在发光结构上。 发光结构具有垂直横截面为反梯形的列形状。

公开(公告)号：US06626995B2

公开(公告)日：2003-09-30

申请号：US09994609

申请日：2001-11-28

申请人： Jun Ho Kim ,  Sang Hyeob Kim ,  Gun Yong Sung

发明人： Jun Ho Kim ,  Sang Hyeob Kim ,  Gun Yong Sung

IPC分类号： C30B2502

CPC分类号： H01L39/2487 ,  C30B1/023 ,  C30B23/02 ,  C30B29/10

摘要： The present invention utilizes magnesium diboride (MgB2) or (Mg1−xMx)B2 as a superconductivity thin film which can be applied to a rapid single flux quantum (RSFQ) circuit. A method for manufacturing a superconductor incorporating therein a superconductivity thin film, begins with preparing a single crystal substrate. Thereafter, a template film is formed on top of the substrate, wherein the template has a hexagonal crystal structure. The superconductivity thin film of MgB2 or (Mg1−xMx)B2 is formed on top of the template film. If Mg amount in the superconductivity thin film is insufficient, Mg vapor is flowed on the surface of the superconductivity thin film while a post annealing process is carried out at the temperature ranging from 400° C. to 900° C.