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89 条记录 (耗时 0.045 秒)

    Multi-zone illuminator with embedded process control sensors
    52.
    发明授权
    Multi-zone illuminator with embedded process control sensors 失效
    带嵌入式过程控制传感器的多区域照明器

    公开(公告)号：US5367606A

    公开(公告)日：1994-11-22

    申请号：US56599

    申请日：1993-08-10

    申请人： Mehrdad M. Moslehi ,  Robert Matthews ,  Cecil J. Davis

    发明人： Mehrdad M. Moslehi ,  Robert Matthews ,  Cecil J. Davis

    IPC分类号： H01L21/26 ,  G01J5/00 ,  H01L21/00 ,  H01L21/324 ,  H05B3/62

    CPC分类号： H01L21/67115

    摘要： A multi-zone illuminator for processing semiconductor wafers is described which comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.

    摘要翻译： 描述了用于处理半导体晶片的多区域照明器，其包括嵌入在灯壳体的反射器侧中的多个源灯和虚拟灯。 源灯布置成多个同心圆形区域。 照明器还包括用于接收多点温度传感器以测量半导体晶片温度及其分布均匀性的多个光管。 一个镀金的反光板安装在灯壳的底部，用于将光能反射并引导到晶片表面。 可以使用空间电梯和适配器组件来调节反射板与晶片与灯和晶片之间的距离。 多区域照明器允许在瞬态和稳态晶片加热循环期间均匀的晶片加热。

    Multi zone illuminator with embeded process control sensors and light interference elimination circuit
    53.
    发明授权
    Multi zone illuminator with embeded process control sensors and light interference elimination circuit 失效
    具有嵌入式过程控制传感器和光干扰消除电路的多区域照明器

    公开(公告)号：US5268989A

    公开(公告)日：1993-12-07

    申请号：US870446

    申请日：1992-04-16

    申请人： Mehrdad M. Moslehi ,  Robert Matthews ,  Cecil J. Davis

    发明人： Mehrdad M. Moslehi ,  Robert Matthews ,  Cecil J. Davis

    IPC分类号： H01L21/26 ,  G01J5/00 ,  H01L21/00 ,  H01L21/324 ,  C23C16/48 ,  H05B3/00

    CPC分类号： H01L21/67115

    摘要： A multi-zone illuminator for processing semiconductor wafers comprises a plurality of source lamps and dummy lamps embedded in the reflector side of a lamp housing. The source lamps are arranged in a plurality of concentric circular zones. The illuminator also comprises plurality of light pipes for receiving multi-point temperature sensors to measure the semiconductor wafer temperature and its distribution uniformity. A gold-plated reflector plate is attached to the bottom side of the lamp housing for reflecting and directing optical energy toward the wafer surface. The distance between the reflector plate and the wafer and the lamps and the wafer may be adjusted with the use of a spacial elevator and adaptor assembly. The multi-zone illuminator allows uniform wafer heating during both transient and steady-state wafer heating cycles.

    Integrated circuit processing system
    54.
    发明授权
    Integrated circuit processing system 失效
    集成电路处理系统

    公开(公告)号：US4966519A

    公开(公告)日：1990-10-30

    申请号：US114812

    申请日：1987-10-29

    申请人： Cecil J. Davis ,  Robert Matthews ,  Robert A. Bowling

    发明人： Cecil J. Davis ,  Robert Matthews ,  Robert A. Bowling

    IPC分类号： B65G49/07 ,  H01L21/00 ,  H01L21/677 ,  H01L21/687

    CPC分类号： H01L21/67748 ,  H01L21/67201 ,  H01L21/67757 ,  H01L21/67772 ,  Y10S414/139 ,  Y10S414/14

    摘要： A vacuum-tight wafer carrier, and a load lock suitable for use with this wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The carrier also contains elastic elements to restrain the wafers from rattling around, which further reduces the internal generation of particulates. When the wafer carrier is placed into the load lock, its body is lowered from beneath its cover through an aperture into a lower chamber, where wafers are loaded and unloaded under vacuum; the carrier cover remains covering the aperture into the lower chamber, so that the wafers never see any surface which is directly exposed to atmosphere. A wafer transport arm mechanism permits interchange of wafers among one or more processing stations and one or more load locks of this type.

    摘要翻译： 真空密封晶片载体和适合与该晶片载体一起使用的负载锁。 晶片在每一侧由稍微倾斜的搁架支撑，从而在晶片表面和搁板表面之间进行最小的接触（线接触）。 这通过晶片表面的磨损来减少颗粒的产生。 载体还包含弹性元件以限制晶片的晃动，这进一步减少了微粒的内部产生。 当晶片载体被放置在负载锁中时，其主体通过一个孔从其下方的下部腔室下降到下部腔室，其中晶片在真空下被装载和卸载; 载体盖保持覆盖孔进入下室，使得晶片从未看到直接暴露于大气的任何表面。 晶片传送臂机构允许在一个或多个处理站和一个或多个这种类型的装载锁之间交换晶片。

    Vacuum slice carrier
    55.
    发明授权
    Vacuum slice carrier 失效
    真空切片载体

    公开(公告)号：US4943457A

    公开(公告)日：1990-07-24

    申请号：US96216

    申请日：1987-09-04

    申请人： Cecil J. Davis ,  Robert Matthews

    发明人： Cecil J. Davis ,  Robert Matthews

    IPC分类号： H01L21/673

    CPC分类号： H01L21/67369 ,  Y10T428/1334

    摘要： A vacuum-tight wafer carrier. The wafers are supported at each side by a slightly sloping shelf, so that minimal contact (line contact) is made between the wafer surface and the surface of the shelf. This reduces generation of particulates by abrasion of the surface of the wafer. The door of the vacuum carrier contains elastic elements to press the wafers lightly against the back of the carrier box. Thus, when the door of the box is closed, the wafers are restrained from rattling around, which further reduces the internal generation of particulates.

    摘要翻译： 真空密封晶片载体。 晶片在每一侧由稍微倾斜的搁架支撑，从而在晶片表面和搁板表面之间进行最小的接触（线接触）。 这通过晶片表面的磨损来减少颗粒的产生。 真空载体的门包含弹性元件，将晶片轻轻按压在载体箱的背面。 因此，当箱子的门关闭时，晶片被抑制在周围，这进一步减少了微粒的内部产生。

    Selective etching of tungsten by remote and in situ plasma generation
    58.
    发明授权
    Selective etching of tungsten by remote and in situ plasma generation 失效
    通过远程和原位等离子体生成选择性蚀刻钨

    公开(公告)号：US4874723A

    公开(公告)日：1989-10-17

    申请号：US74375

    申请日：1987-07-16

    申请人： Rhett B. Jucha ,  Duane E. Carter ,  Cecil J. Davis ,  Sue E. Crank

    发明人： Rhett B. Jucha ,  Duane E. Carter ,  Cecil J. Davis ,  Sue E. Crank

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/32136 ,  Y10S148/051 ,  Y10S438/963

    摘要： A thin film etching process, wherein the rate of deposition of a robust sidewall passivant is controlled so that passivants can be continually deposited on the sidewalls of the resist pattern to change the geometry of the resist pattern during the processing step. That is, the existing pattern is modified as if a sidewall filament has been deposited on it, which can be advantageous for many purposes, without the added process complexity required by a sidewall filament process.

    摘要翻译： 薄膜蚀刻工艺，其中控制坚固的侧壁钝化剂的沉积速率，使得钝化剂可以连续沉积在抗蚀剂图案的侧壁上，以在加工步骤期间改变抗蚀剂图案的几何形状。 也就是说，现有的图案被修改，好像侧壁细丝已经沉积在其上，这对于许多目的而言是有利的，而不需要由侧壁细丝工艺所需的附加工艺复杂性。

    Method and apparatus for cleaning integrated circuit wafers
    59.
    发明授权
    Method and apparatus for cleaning integrated circuit wafers 失效
    集成电路晶片清洗方法和装置

    公开(公告)号：US4863561A

    公开(公告)日：1989-09-05

    申请号：US251043

    申请日：1988-09-26

    申请人： Dean W. Freeman ,  Cecil J. Davis

    发明人： Dean W. Freeman ,  Cecil J. Davis

    IPC分类号： H01L21/00 ,  H01L21/306

    CPC分类号： H01L21/02046 ,  H01L21/02049 ,  H01L21/67028 ,  Y10S438/906

    摘要： The described embodiment of the present invention provides a method and device for cleaning the surface of a silicon wafer using dry gases. At least one of the gases provided is excited by passing the gas through a microwave plasma generator or by heating the wafer thereby exciting the gases near the surface of the wafer. The excitation of the gases causes chemical reactions similar to those induced by ionization of the nongaseous cleaning materials in water. After a suitable etching period, the etching chamber is purged using an insert gas, such as nitrogen, which helps carry away the remaining reacted contaminants.

    摘要翻译： 本发明的所述实施例提供了一种使用干燥气体清洁硅晶片的表面的方法和装置。 通过使气体通过微波等离子体发生器或通过加热晶片从而激发靠近晶片表面的气体来激发所提供的气体中的至少一种。 气体的激发导致类似于在水中非气态清洁材料的电离诱导的化学反应。 在合适的蚀刻周期之后，使用诸如氮气的插入气体来清洗蚀刻室，这有助于携带剩余的反应污染物。