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124 条记录 (耗时 0.033 秒)

    Apparatus and Method for Providing Uniform Flow of Gas
    54.
    发明申请
    Apparatus and Method for Providing Uniform Flow of Gas 有权
    提供气体均匀流动的装置和方法

    公开(公告)号：US20130263944A1

    公开(公告)日：2013-10-10

    申请号：US13827510

    申请日：2013-03-14

    申请人： Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

    发明人： Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

    IPC分类号： F17D3/00

    CPC分类号： F17D3/00 ,  F17C1/00 ,  F17C2270/0518 ,  Y10T137/7833 ,  Y10T137/8593 ,  Y10T137/87249

    摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    摘要翻译： 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

    Multi-Chamber Substrate Processing System
    55.
    发明申请
    Multi-Chamber Substrate Processing System 审中-公开
    多腔基底处理系统

    公开(公告)号：US20130196078A1

    公开(公告)日：2013-08-01

    申请号：US13754771

    申请日：2013-01-30

    申请人： Joseph Yudovsky ,  Nag B. Patibandla ,  Pravin K. Narwankar ,  Li-Qun Xia ,  Toshiaki Fujita ,  Ralf Hofmann ,  Jeonghoon Oh ,  Srinivas Satya ,  Banqiu Wu

    发明人： Joseph Yudovsky ,  Nag B. Patibandla ,  Pravin K. Narwankar ,  Li-Qun Xia ,  Toshiaki Fujita ,  Ralf Hofmann ,  Jeonghoon Oh ,  Srinivas Satya ,  Banqiu Wu

    IPC分类号： C23C16/458

    CPC分类号： C23C16/4584 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/67742

    摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon.

    摘要翻译： 提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。 基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。 每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。 设置在基板支撑组件上的多个基板在基板处理平台内进出处理。 衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

    Apparatus and Process for Atomic Layer Deposition
    57.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号：US20120225206A1

    公开(公告)日：2012-09-06

    申请号：US13037430

    申请日：2011-03-01

    申请人： Joseph Yudovsky

    发明人： Joseph Yudovsky

    IPC分类号： C23C16/458 ,  C23C16/455

    CPC分类号： C23C16/45551 ,  C23C16/4583 ,  H01L21/67715 ,  H01L21/6776 ,  H01L21/67784

    摘要： Provided are atomic layer deposition apparatus and methods including a gas cushion plate comprising a plurality of openings configured to create a gas cushion adjacent the gas cushion plate so that a substrate can be moved through a processing chamber.

    摘要翻译： 本发明提供了一种原子层沉积装置和方法，其包括气垫板，其包括多个开口，其被配置为产生邻近气垫板的气垫，使得基板能够移动通过处理室。

    Apparatus and Process for Atomic Layer Deposition
    58.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号：US20120135609A1

    公开(公告)日：2012-05-31

    申请号：US12956650

    申请日：2010-11-30

    申请人： Joseph Yudovsky ,  Tatsuya Sato ,  Kenric Choi ,  Anh N. Nguyen ,  Faruk Gungor

    发明人： Joseph Yudovsky ,  Tatsuya Sato ,  Kenric Choi ,  Anh N. Nguyen ,  Faruk Gungor

    IPC分类号： H01L21/30 ,  B67D7/06

    CPC分类号： C23C16/45565 ,  C23C16/45548 ,  C23C16/45574

    摘要： Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.

    摘要翻译： 提供了用于在例如原子层沉积（ALD）工艺期间形成膜的装置中使用的气体分配板（喷头）。 气体分配板包括限定厚度和外围边缘的主体，并且具有面向基板的前表面。 前表面具有中心区域，其具有多个开口，其被配置成在衬底上分配工艺气体和具有倾斜区域的聚焦环。 聚焦环与中心区域同心，使得聚焦环处的厚度大于中心区域处的厚度。

    METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE
    59.
    发明申请
    METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE 审中-公开
    用于确定前置放大器数量的方法

    公开(公告)号：US20100305884A1

    公开(公告)日：2010-12-02

    申请号：US12781353

    申请日：2010-05-17

    申请人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

    发明人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

    IPC分类号： G01N7/00

    CPC分类号： C23C16/4481

    摘要： Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.

    摘要翻译： 本文提供了确定安瓿中前体的量的方法。 在一些实施方案中，用于测定安瓿中的固体前体的量的方法可包括确定具有部分填充有固体前体的第一体积的安瓿中的第一压力; 将一定量的第一气体流入安瓿中以在安瓿中建立第二压力; 基于第一压力，第二压力和流入安瓿的第一气体的量之间的关系来确定第一容积的剩余部分; 并且基于第一体积和第一体积的剩余部分确定安瓿中的固体前体的量。