公开(公告)号：US5288329A

公开(公告)日：1994-02-22

申请号：US616106

申请日：1990-11-20

申请人： Kyuzo Nakamura ,  Michio Ishikawa ,  Kazuyuki Ito ,  Noriaki Tani ,  Masanori Hashimoto ,  Yoshifumi Ota

发明人： Kyuzo Nakamura ,  Michio Ishikawa ,  Kazuyuki Ito ,  Noriaki Tani ,  Masanori Hashimoto ,  Yoshifumi Ota

IPC分类号： C23C16/44 ,  C23C16/02 ,  C23C16/50 ,  C23C16/54 ,  C23F4/00 ,  H01L21/205 ,  H01L21/31 ,  H01L21/00

CPC分类号： C23C16/54 ,  C23C16/0245

摘要： An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.

摘要翻译： 一种在线型化学气相沉积装置，具有用于清洁至少基板保持件的蚀刻装置，该蚀刻装置设置在基板卸载站的下游，其中处理的基板在大气压力下从基板保持器移除。 蚀刻装置包括等离子体蚀刻装置，其中衬底保持器位于阳极侧或干蚀刻装置，其中衬底保持器位于阴极侧，从而减少装置的停机时间而不受任何影响 附着膜从基板保持器或其他部分剥离。