公开(公告)号：US20050185107A1

公开(公告)日：2005-08-25

申请号：US11046757

申请日：2005-02-01

申请人： Byeong-Seob Ban ,  Eun-Hee Han ,  Chang-Hun Lee ,  Hyun-Wuk Kim ,  Ji-Won Sohn

发明人： Byeong-Seob Ban ,  Eun-Hee Han ,  Chang-Hun Lee ,  Hyun-Wuk Kim ,  Ji-Won Sohn

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362

CPC分类号： G02F1/136286 ,  G02F1/136209 ,  G02F2001/136295

摘要： A thin film transistor array panel may comprise gate lines including gate electrodes and storage electrode lines including storage electrodes that are formed on the insulating substrate, a semiconductor layer formed on the gate insulating layer covering the gate lines, data lines and drain electrodes which are formed on the gate insulating layer, the drain lines including source electrodes formed at least on the semiconductor layer and intersecting the gate lines to define pixel areas, and the drain electrodes being separated from the data lines and opposite to the data lines with respect to the gate electrodes and including a storage capacitor conductor overlapping the storage electrodes. Pixel electrodes and common electrodes may be formed on the passivation layer for covering the semiconductor layer. The pixel electrodes and the common electrodes may be neither perpendicular to nor parallel to the data lines and may be made of opaque conductive material.

摘要翻译： 薄膜晶体管阵列面板可以包括栅极线，其包括栅电极和存储电极线，其包括形成在绝缘基板上的存储电极，形成在覆盖栅极线的栅极绝缘层上的半导体层，形成的栅极线，数据线和漏电极 在所述栅极绝缘层上，所述漏极线包括至少形成在所述半导体层上并且与所述栅极线相交的源极，以限定像素区域，并且所述漏电极与所述数据线分离并且相对于所述栅极与所述数据线相反 电极，并且包括与存储电极重叠的存储电容器导体。 可以在钝化层上形成像素电极和公共电极以覆盖半导体层。 像素电极和公共电极既不与数据线垂直也不平行，并且可以由不透明的导电材料制成。