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公开(公告)号：US20120049178A1
公开(公告)日：2012-03-01
申请号：US13319515
申请日：2010-01-28
申请人： Hiroshi Sugimoto , Tohru Sonoda
发明人： Hiroshi Sugimoto , Tohru Sonoda
CPC分类号： H01L27/3258 , H01L51/5237 , H01L51/5253
摘要： An organic EL display device (10) includes: an insulating substrate (20); a first planarizing film (21) formed on the insulating substrate (20) and made of a resin; a first electrode (13) formed on the first planarizing film (21); an organic EL layer (17) formed on the first electrode (13); a second electrode (14) formed on the organic EL layer (17); and a second planarizing film (22) formed between the first electrode (13) and the first planarizing film (21), and covering the first planarizing film (21). The second planarizing film (22) is made of a resin having a lower hygroscopic property than the resin forming the first planarizing film (21).
摘要翻译： 有机EL显示装置（10）包括：绝缘基板（20）; 第一平面化膜（21），形成在所述绝缘基板（20）上并由树脂制成; 形成在第一平坦化膜（21）上的第一电极（13）; 形成在所述第一电极（13）上的有机EL层（17）。 形成在有机EL层（17）上的第二电极（14）; 以及形成在第一电极（13）和第一平坦化膜（21）之间的第二平坦化膜（22），并且覆盖第一平坦化膜（21）。 第二平面化膜（22）由比形成第一平坦化膜（21）的树脂的吸湿性低的树脂制成。
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公开(公告)号：US20110074837A1
公开(公告)日：2011-03-31
申请号：US12891166
申请日：2010-09-27
申请人： Michihiro Takeda , Hiroshi Sugimoto
发明人： Michihiro Takeda , Hiroshi Sugimoto
IPC分类号： G09G5/10
CPC分类号： G09G3/02 , G09G3/2003 , G09G3/2803
摘要： An image display device includes: a signal generation part which outputs an image signal corresponding to a gradation level of a pixel which constitutes an image; a laser beam source which radiates a laser beam having intensity corresponding to the image signal; and a signal adjustment part which superposes a high-frequency signal to the image signal inputted to the laser beam source. The signal adjustment part superposes a high-frequency signal which has amplitude not less than a width of a kink region where an input-output characteristic of the laser beam source changes most steeply on the image signal.
摘要翻译： 图像显示装置包括：信号生成部，其输出与构成图像的像素的灰度级对应的图像信号; 激光束源，其辐射具有与图像信号对应的强度的激光束; 以及将高频信号叠加到输入到激光束源的图像信号的信号调整部。 信号调整部叠加具有不小于激光束源的输入输出特性在图像信号上最大变化的扭结区域的宽度的幅度的高频信号。
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公开(公告)号：US20110000621A1
公开(公告)日：2011-01-06
申请号：US12867803
申请日：2009-02-26
IPC分类号： B32B38/04
CPC分类号： B65C9/1826 , B65C9/1807 , B65C2009/0018 , B65C2009/1846 , B65H29/241 , B65H41/00 , B65H2701/192 , B65H2801/75
摘要： The present invention is to provide a tack labeler capable of automatically adhering this type of tack labels without using release papers to articles to be adhered.The present invention is provided with a roll holder 10 for rotatably holding a base material pair roll MPR, a reeling-out unit 20 for reeling out a label formation base material pair LMP from the base material pair roll MPR set in the roll holder 10, a base material pair accumulation unit 30 for accumulating the reeled label formation base material pair LMP, a delivering unit 40 for bringing out and delivering the label formation base material pair LMP from the base material pair accumulation unit 30, a separating-delivering unit 50 for separating the delivered label formation base material pair LMP into label formation base materials LM and delivering the label formation base materials LM, cut units 60 for cutting the separated and delivered label formation base materials LM by predetermined length so as to form individual tack labels, and adhering units 70 for adhering the tack labels cut off from the label formation base materials LM to containers C conveyed to adhering positions.
摘要翻译： 本发明提供一种能够自动地粘贴这种粘性标签而不使用剥离纸的粘贴标签机来粘贴的物品。 本发明提供一种用于可旋转地保持基材对卷MPR的卷保持器10，用于从设置在卷保持器10中的基材对卷MPR卷出标签形成基材对LMP的卷取单元20， 用于堆积卷取的标签形成基材对LMP的基材对累积单元30，用于从基材对聚积单元30输出和输送标签形成基材对LMP的分送单元40，用于 将输送的标签形成基材对LMP分离成标签形成基材LM，并输送标签形成基材LM，切割单元60，用于将分离和交付的标签形成基材LM切割预定长度，以形成单独的粘性标签，以及 粘贴单元70，用于将从标签形成基底材料LM切割的粘性标签粘附到传送到粘附位置的容器C.
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公开(公告)号：US20100045848A1
公开(公告)日：2010-02-25
申请号：US12541740
申请日：2009-08-14
申请人： Hiroshi Sugimoto , Takanori Sato
发明人： Hiroshi Sugimoto , Takanori Sato
IPC分类号： G03B13/00
CPC分类号： H04N5/23212 , H04N5/23219 , H04N5/23245 , H04N5/2628
摘要： An electronic camera includes an imaging device. The imaging device has an imaging surface irradiated with an optical image of an object scene. A CPU executes an AF process based on output of an AF evaluating circuit to adjust a position of a focus lens to a position to be optically converged on a specific object present in an object scene. Upon completion of the AF process, the CPU detects a distance from a lens distal end to the specific object by referencing a current position of the focus lens, and further detects brightness information of the object scene based on output of an AE/AWB evaluating circuit. Moreover, the CPU adjusts an imaging parameter by determining whether or not an object scene attribute including the detected distance and brightness information satisfies a predetermined condition.
摘要翻译： 电子照相机包括成像装置。 成像装置具有用物体场景的光学图像照射的成像表面。 CPU基于AF评估电路的输出执行AF处理，以将聚焦透镜的位置调整到光学会聚在存在于对象场景中的特定对象上的位置。 在完成AF处理后，CPU通过参照聚焦透镜的当前位置来检测从透镜远端到特定物体的距离，并且还基于AE / AWB评估电路的输出来检测物体场景的亮度信息 。 此外，CPU通过确定包括检测到的距离和亮度信息的对象场景属性是否满足预定条件来调整成像参数。
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公开(公告)号：US07564072B2
公开(公告)日：2009-07-21
申请号：US11142322
申请日：2005-06-02
IPC分类号： H01L29/74
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/872 , Y10S388/917
摘要： A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under an edge of the anode electrode and a second p-type zone formed outside the first p-type zone having a lower surface impurity concentration than the first p-type zone. The second p-type zone is provided 15 μm or more outwardly away from the edge of the anode electrode. The surface impurity concentration of the first p-type zone ranges from 1.8×1013 to 4×1013 cm−2, and that of the second p-type zone ranges from 1×1013 to 2.5×1013 cm−2.
摘要翻译： 半导体器件包括与形成在SiC衬底中的n型漂移层肖特基接触的阳极电极和形成在阳极电极外部的JTE区域。 JTE区域由在阳极电极的边缘的漂移层的上部形成的第一p型区域和形成在具有较低表面杂质浓度的第一p型区域外的第二p型区域构成 比第一个p型区域。 第二个p型区域距离阳极电极的边缘向外提供15个或更多个外部。 第一p型区域的表面杂质浓度范围为1.8×1013〜4×1013cm-2，第二p型区域的表面杂质浓度为1×10 13〜2.5×10 13 cm -2。
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公开(公告)号：US20090134404A1
公开(公告)日：2009-05-28
申请号：US12066366
申请日：2006-04-24
IPC分类号： H01L29/24
CPC分类号： H01L29/8611 , H01L21/0445 , H01L29/045 , H01L29/0684 , H01L29/1608 , H01L29/6606
摘要： On a major surface of an n-type silicon carbide inclined substrate (2) is formed an n-type voltage-blocking layer (3) made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer (3) is formed a p-type silicon carbide region (4) rectangular when viewed from above. On the surface of the p-type silicon carbide region (4) is formed a p-type contact electrode (5). In the p-type silicon carbide region (4), the periphery of the p-type silicon carbide region (4) that is parallel with a (11-20) plane (14a) of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.
摘要翻译： 在n型碳化硅倾斜衬底（2）的主表面上通过外延生长形成由碳化硅制成的n型压阻层（3）。 在从上方观察时，在n型电压阻挡层（3）上形成矩形的p型碳化硅区域（4）。 在p型碳化硅区域（4）的表面上形成p型接触电极（5）。 在p型碳化硅区域（4）中，与碳化硅晶体的（11-20）面（14a）平行的p型碳化硅区域（4）的周边易于引起 雪崩破裂，位于短边。 以这种方式，可以提高碳化硅半导体器件的介电强度。
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公开(公告)号：US20060134847A1
公开(公告)日：2006-06-22
申请号：US11353992
申请日：2006-02-15
IPC分类号： H01L21/8238 , H01L21/336 , H01L21/265
CPC分类号： H01L29/7802 , H01L21/0465 , H01L21/047 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要： A semiconductor device and its manufacturing method are provided in which the trade-off relation between channel resistance and JFET resistance, an obstacle to device miniaturization, is improved and the same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET that uses SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.
摘要翻译： 提供了一种半导体器件及其制造方法，其中改善了沟道电阻和JFET电阻之间的折衷关系，从而改善了器件的小型化，并且通过离子注入使用相同的掩模形成源极区域和基极区域。 在使用SiC的垂直MOSFET中，通过使用相同的锥形掩模的离子注入形成源极区域和基极区域，以使基极区域呈锥形。 当锥形掩模的材料与离子注入中的SiC具有相同的范围时，锥形掩模的锥角设定为30°至60°，当锥形掩模的材料为SiO
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公开(公告)号：US20050244473A1
公开(公告)日：2005-11-03
申请号：US11117879
申请日：2005-04-29
申请人： Patrick Hughes , Lon Spada , Hiroshi Sugimoto , Wendy Blanda , James Chang
发明人： Patrick Hughes , Lon Spada , Hiroshi Sugimoto , Wendy Blanda , James Chang
CPC分类号： A61K9/0051
摘要： Biocompatible intraocular implants include an anti-excitotoxic agent and a biodegradable polymer that is effective to facilitate release of the anti-excitotoxic agent into an eye for an extended period of time. The therapeutic agents of the implants may be associated with a biodegradable polymer matrix, such as a matrix that is substantially free of a polyvinyl alcohol. The implants may be placed in an eye to treat or reduce the occurrence of one or more ocular conditions, such as retinal damage, including glaucoma and proliferative vitreoretinopathy.
摘要翻译： 生物相容性眼内植入物包括抗兴奋性毒性剂和可生物降解的聚合物，其有效促进抗兴奋性毒性剂长时间释放到眼睛中。 植入物的治疗剂可以与可生物降解的聚合物基质相关，例如基本上不含聚乙烯醇的基质。 植入物可以放置在眼睛中以治疗或减少一种或多种眼部病症的发生，例如视网膜损伤，包括青光眼和增生性玻璃体视网膜病变。
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公开(公告)号：US06924987B2
公开(公告)日：2005-08-02
申请号：US10232661
申请日：2002-09-03
IPC分类号： B23K26/00 , B23K26/38 , B23K101/42 , H01L23/12 , H01L23/498 , H01L23/50 , H05K1/02 , H05K1/11 , H05K3/00 , H05K3/06 , H05K3/46 , H05K1/14
CPC分类号： H01L23/50 , H01L23/49822 , H01L23/49838 , H01L2224/05026 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15173 , H01L2924/15311 , H01L2924/16152 , H01L2924/3011 , H05K1/0237 , H05K1/114 , H05K3/0035 , H05K3/4652 , H05K2201/0394 , H05K2201/09509 , H05K2201/09518 , H05K2201/09527 , H01L2224/05599
摘要： A wiring board with microstrip structure has: a first conductor layer that is provided with conductor wirings to be connected to a semiconductor chip in its external terminal (bonding pad); a second conductor layer that is provided with a conductor pattern connected through a via to a ground wiring, for supplying a power supply of ground potential to the semiconductor chip; and a third conductor layer that is provided with a power supply terminal connected through a via to a power supply wiring for supplying an operation power supply of a potential other than the ground potential to the semiconductor chip, a signal terminal connected through a via to a signal wiring for transmitting an electric signal, and a ground terminal connected through a via to the conductor pattern in the second conductor layer.
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公开(公告)号：US06453812B1
公开(公告)日：2002-09-24
申请号：US09522532
申请日：2000-03-10
申请人： Hideki Ikeda , Hiroshi Sugimoto , Yukio Ejiri
发明人： Hideki Ikeda , Hiroshi Sugimoto , Yukio Ejiri
IPC分类号： B41F3102
CPC分类号： B41F31/045 , B41F33/00
摘要： Prior to printing work, the operator of the printing machine selectively inputs a kind of the printing paper (such as one of coated paper, mat-coated paper, and non-coated paper and so on) through a paper-type input portion 17. A CPU 11 controls the supply of ink according to the type of printing paper to be used as a result of controlling one of the operation of ink fountain keys, an ink fountain roller, and an ink ductor roller using an ink fountain key controller 21, an ink fountain roller controller 22, and an ink ductor roller controller 23.
摘要翻译： 在打印作业之前，打印机的操作者通过纸张类型的输入部分17选择性地输入一种打印纸（例如涂布纸，涂布纸和非涂布纸等之一）。 CPU11根据要使用的打印纸的类型来控制墨的供应，作为使用墨斗键控制器21控制墨斗键，墨斗辊和墨水导辊之一的操作的结果， 墨斗辊控制器22和墨水导管辊控制器23。
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