Molten metal spraying for metallization application in solar cells
    51.
    发明授权
    Molten metal spraying for metallization application in solar cells 失效
    熔融金属喷涂用于太阳能电池中的金属化应用

    公开(公告)号:US08163330B2

    公开(公告)日:2012-04-24

    申请号:US11877826

    申请日:2007-10-24

    IPC分类号: B05D5/12

    摘要: The present invention provides a method of making back side contacts and back surface fields in photovoltaic devices such as silicon solar cells. According to one aspect, the process of the present invention is a non-contact process, overcoming many of the problems of the prior art. According to certain aspects, molten aluminum is used to form the contact regions as opposed to the screen printing process of the prior art. According to additional aspects, the process can be used to form the distributed point contacts and localized back surface fields for dielectric passivated back surface. According to still further aspects, molten aluminum spray and/or atomization is used for the back side metallization.

    摘要翻译: 本发明提供了在诸如硅太阳能电池的光电器件中制造背面接触和背面场的方法。 根据一个方面,本发明的方法是克服现有技术的许多问题的非接触方法。 根据某些方面,与现有技术的丝网印刷方法相反,使用熔融铝来形成接触区域。 根据另外的方面,该方法可以用于形成电介质钝化后表面的分布点接触和局部后表面场。 根据另外的方面,熔融铝喷雾和/或雾化用于背面金属化。

    Methods of making an emitter having a desired dopant profile
    52.
    发明授权
    Methods of making an emitter having a desired dopant profile 失效
    制备具有所需掺杂剂分布的发射体的方法

    公开(公告)号:US08088675B2

    公开(公告)日:2012-01-03

    申请号:US12562734

    申请日:2009-09-18

    IPC分类号: H01L21/00

    摘要: A method for obtaining a desired dopant profile of an emitter for a solar cell which includes depositing a first amorphous silicon layer having a first doping level over an upper surface of the crystalline silicon substrate, depositing a second amorphous silicon layer having a second doping level on the first amorphous silicon layer, and heating the crystalline silicon substrate and the first and second amorphous silicon layers to a temperature sufficient to cause solid phase epitaxial crystallization of the first and second amorphous silicon layers, such that the first and second amorphous silicon layers, after heating, have the same grain structure and crystal orientation as the underlying crystalline silicon substrate.

    摘要翻译: 一种用于获得用于太阳能电池的发射器的期望掺杂物分布的方法,其包括在所述晶体硅衬底的上表面上沉积具有第一掺杂水平的第一非晶硅层,将具有第二掺杂水平的第二非晶硅层沉积在 第一非晶硅层,并且将晶体硅衬底和第一和第二非晶硅层加热到足以引起第一和第二非晶硅层的固相外延结晶的温度,使得第一和第二非晶硅层在 加热,具有与下面的晶体硅衬底相同的晶粒结构和晶体取向。

    Actuatable loadport system
    54.
    发明授权
    Actuatable loadport system 有权
    可动载荷系统

    公开(公告)号:US07914246B2

    公开(公告)日:2011-03-29

    申请号:US12484291

    申请日:2009-06-15

    IPC分类号: B65G47/90

    摘要: A system adapted to exchange wafer carriers between an overhead transport mechanism and a platform is provided. The system employs a wafer carrier having at least one handle extending therefrom, an overhead transfer mechanism, a transporter coupled to the overhead transfer mechanism and adapted to move therealong and having a wafer carrier coupling mechanism adapted to couple to the at least one wafer carrier handle, a platform positioned below the overhead transfer mechanism such that wafer carriers traveling along the overhead transfer mechanism travel over the platform, and an actuator coupled to the platform and adapted so as to elevate the platform to an elevation wherein the loading platform may contact the bottom of a wafer carrier coupled to the overhead transfer mechanism.

    摘要翻译: 提供了一种适于在架空输送机构和平台之间交换晶片载体的系统。 该系统采用具有从其延伸的至少一个手柄的晶片载体,塔顶转移机构,连接到塔顶转移机构的运输器,并适于沿其移动并具有适于联接到至少一个晶片载体手柄的晶片载体联接机构 位于架空传送机构下方的平台,使得沿着架空传送机构行进的晶片载体在平台上移动;以及致动器,其联接到平台并适于将平台升高至仰角,其中,装载平台可接触底部 耦合到架空输送机构的晶片载体。

    ACTUATABLE LOADPORT SYSTEM
    55.
    发明申请
    ACTUATABLE LOADPORT SYSTEM 有权
    可执行装载系统

    公开(公告)号:US20090252583A1

    公开(公告)日:2009-10-08

    申请号:US12484291

    申请日:2009-06-15

    IPC分类号: B65G47/90

    摘要: A system adapted to exchange wafer carriers between an overhead transport mechanism and a platform is provided. The system employs a wafer carrier having at least one handle extending therefrom, an overhead transfer mechanism, a transporter coupled to the overhead transfer mechanism and adapted to move therealong and having a wafer carrier coupling mechanism adapted to couple to the at least one wafer carrier handle, a platform positioned below the overhead transfer mechanism such that wafer carriers traveling along the overhead transfer mechanism travel over the platform, and an actuator coupled to the platform and adapted so as to elevate the platform to an elevation wherein the loading platform may contact the bottom of a wafer carrier coupled to the overhead transfer mechanism.

    摘要翻译: 提供了一种适于在架空输送机构和平台之间交换晶片载体的系统。 该系统采用具有从其延伸的至少一个手柄的晶片载体,塔顶转移机构,连接到塔顶转移机构的运输器,并适于沿其移动并具有适于联接到至少一个晶片载体手柄的晶片载体联接机构 位于架空传送机构下方的平台,使得沿着架空传送机构行进的晶片载体在平台上移动;以及致动器,其联接到平台并适于将平台升高至仰角,其中,装载平台可接触底部 耦合到架空输送机构的晶片载体。

    Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
    57.
    发明授权
    Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application 失效
    用于制造太阳能电池应用的大面积多晶硅片的设备

    公开(公告)号:US07572334B2

    公开(公告)日:2009-08-11

    申请号:US11325089

    申请日:2006-01-03

    IPC分类号: C30B11/00 B05C11/00

    摘要: A method and apparatus for forming a semiconductor sheet suitable for use as a solar cell by depositing an array of solidified drops of a feed material on a sheet support. The desired properties of the sheet fabricated with the teaching of this invention are: flatness, low residual stress, minority carrier diffusion length greater than 40 microns, and minimum grain dimension at least two times the minority carrier diffusion length. In one embodiment, the deposition chamber is adapted to form and process sheets that have a surface area of about 1,000-2,400 cm2.

    摘要翻译: 一种用于形成适合用作太阳能电池的半导体片的方法和装置,该方法和装置通过在片材载体上沉积馈送材料的固化液滴阵列。 通过本发明的教导制造的片材的期望性质是:平坦度,低残余应力,大于40微米的少数载流子扩散长度,以及最小晶粒尺寸至少是少数载流子扩散长度的两倍。 在一个实施例中,沉积室适于形成和处理具有约1,000-2,400cm 2的表面积的片材。

    Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots

    公开(公告)号:US07496423B2

    公开(公告)日:2009-02-24

    申请号:US11747583

    申请日:2007-05-11

    IPC分类号: G06F19/00

    摘要: The present invention generally comprises a method for achieving fault tolerance in a PV FAB. A plurality of processing tools may be coupled together along a processing line, and a plurality of substantially identical processing lines may be arranged within the FAB. Whenever a processing tool within any processing line is shut-down, rather than shut-down the entire processing line containing the shut-down processing tool, work-pieces may be routed around the shut-down processing tool by transferring the work-pieces to an adjacent processing line within the FAB. At a location after the shut-down processing tool, the work-pieces may be transferred back to the processing line containing the shut-down processing tool. During the time period that the processing tool is shut-down, the other processing lines within the FAB may increase their throughput in order to maintain a substantially constant optimum throughput for the FAB over a given period of time.