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    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
    52.
    发明授权
    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 失效
    电子束检查方法及装置及半导体制造方法及其制造线

    公开(公告)号：US5986263A

    公开(公告)日：1999-11-16

    申请号：US824413

    申请日：1997-03-26

    申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

    发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

    IPC分类号： G01Q20/00 ,  G01Q30/04 ,  G01Q30/02 ,  G01Q60/00 ,  H01J37/20 ,  H01J37/22 ,  H01J37/256 ,  H01J37/28 ,  H01L21/66

    CPC分类号： H01J37/28 ,  H01J2237/2817

    摘要： An electron beam inspection method and apparatus. The method includes controlling acceleration voltage of electron beam and electric field on a sample, beam current, beam diameter, image detection rate, image dimensions, precharge, discharge, or a combination of them, exposing an object to the electron beam, detecting in a sensor a physical change generated from the object, and inspecting or measuring the object on the basis of a signal representing the detected physical change. The apparatus includes an electron source (potential E2) for generating an electron beam, a deflector for scanning generated electrons, an objective lens for focusing the electron beam upon the object, a grid (potential E1) disposed between the object and the objective lens, a wafer holder (potential E0) for holding the object, a sensor for detecting generated secondary electrons, a potential controller for controlling the potential E0, E1 and E2, and a storage for storing optimum potential conditions. By changing conditions of an electron optic system such as potential E0, E1 and E2, the acceleration voltage and electric field on the object are controlled. For a material located at least in an upper layer of a plurality of materials forming the object, the secondary electron yield ratio can be made nearly unity and appropriate contrast of an obtained image can be provided with minimized influence of charge up.

    摘要翻译： 电子束检查方法和装置。 该方法包括控制电子束的加速电压和样品上的电场，束电流，光束直径，图像检测率，图像尺寸，预充电，放电或它们的组合，将物体暴露于电子束，在 传感器从物体产生的物理变化，以及根据表示检测到的物理变化的信号检查或测量物体。 该装置包括用于产生电子束的电子源（电位E2），用于扫描产生的电子的偏转器，用于将电子束聚焦在物体上的物镜，设置在物体和物镜之间的格栅（电位E1） 用于保持物体的晶片保持器（电位E0），用于检测产生的二次电子的传感器，用于控制电位E0，E1和E2的电位控制器，以及用于存储最佳电位条件的存储器。 通过改变诸如电位E0，E1和E2的电子光学系统的状态，控制对象上的加速电压和电场。 对于至少位于形成物体的多种材料的上层中的材料，二次电子屈服比可以几乎一致，并且可以以最小化的充电影响来提供所获得的图像的适当的对比度。

    Method of recording/reproducing optical disk data
    55.
    发明授权
    Method of recording/reproducing optical disk data 失效
    记录/再现光盘数据的方法

    公开(公告)号：US5388105A

    公开(公告)日：1995-02-07

    申请号：US980438

    申请日：1992-11-23

    申请人： Yuji Takagi ,  Isao Satoh ,  Yuzuru Kuroki

    发明人： Yuji Takagi ,  Isao Satoh ,  Yuzuru Kuroki

    IPC分类号： G11B20/12 ,  G11B7/00 ,  G11B7/24 ,  G11B7/30 ,  G11B20/18 ,  H03M13/00 ,  G06F11/10

    CPC分类号： G11B20/1833 ,  H03M13/00

    摘要： A method of recording and reproducing data on and from a rewritable optical disk used for recording/reproduction of data on a sector by sector basis. A dummy block or a parity subject to error detection and correction coding is additionally recorded at the rear of a data block on a sector. A defect caused by deterioration due to reiterative operation at the trail of the sector can be prevented from reaching the data block and data can be reproduced with high reliability.

    摘要翻译： 一种用于在逐个记录/再现数据的可重写光盘上记录和再现数据的方法。 经过错误检测和校正编码的虚拟块或奇偶校验被附加地记录在扇区上的数据块的后部。 可以防止由于在扇区的轨迹处的重复操作引起的劣化而导致的缺陷达到数据块，并且可以高可靠性再现数据。

    Double-sided optical disc player
    57.
    发明授权
    Double-sided optical disc player 失效
    双面光盘播放器

    公开(公告)号：US5253242A

    公开(公告)日：1993-10-12

    申请号：US878343

    申请日：1992-05-04

    申请人： Isao Satoh ,  Yoshihisa Fukushima ,  Yuji Takagi ,  Yasushi Azumatani ,  Hiroshi Hamasaka

    发明人： Isao Satoh ,  Yoshihisa Fukushima ,  Yuji Takagi ,  Yasushi Azumatani ,  Hiroshi Hamasaka

    IPC分类号： G11B7/00 ,  G11B7/004 ,  G11B7/085 ,  G11B21/08 ,  G11B27/10 ,  G11B27/32

    CPC分类号： G11B7/08505 ,  G11B21/085 ,  G11B27/105 ,  G11B27/32

    摘要： A double-sided optical disc player which comprises first and second optical heads for radiating laser beams to tracks on respective sides of a double-sided optical disc; first and second ID read-out units for reading respective sector addresses out from associated sector identifiers; an ID offset detecting unit for calculating, in response to outputs from the ID read-out unit, the ID offset value descriptive of an angular displacement in sector position between the opposite sides of the optical disc traced by the associated optical heads; an ID offset retaining unit for retaining the ID offset value; a first sector recording and/or production control unit for detecting a target sector when an sector address output from the first ID read-out unit coincide with the target sector and for activating a recording or reproduction of information; an adder for adding the ID offset value to an output from the second ID read-out unit; a second sector recording and/or reproduction control unit for detecting a target object when an corrected sector address outputted from the adder coincides with the target sector and for activating the recording or reproduction of the information; and an information recording and/or reproducing unit for recording or reproducing information on or from the target sectors on the respective sides of the optical disc by means of the first and second sector recording and/or reproduction control units.

    Information recording and reproducing apparatus which detects deterioration of a medium in each sector before recording
    58.
    发明授权
    Information recording and reproducing apparatus which detects deterioration of a medium in each sector before recording 失效
    信息记录和再现装置，用于在记录之前检测每个扇区中介质的劣化

    公开(公告)号：US4821254A

    公开(公告)日：1989-04-11

    申请号：US866954

    申请日：1986-05-27

    申请人： Isao Satoh ,  Yoshihisa Fukushima ,  Makoto Ichinose ,  Yuzuru Kuroki ,  Yuji Takagi

    发明人： Isao Satoh ,  Yoshihisa Fukushima ,  Makoto Ichinose ,  Yuzuru Kuroki ,  Yuji Takagi

    IPC分类号： G06F3/06 ,  G06F3/08 ,  G06F12/00 ,  G11B7/00 ,  G11B7/0055 ,  G11B7/30 ,  G11B20/10 ,  G11B20/18 ,  G11B7/013

    CPC分类号： G11B20/1883 ,  G11B20/1809 ,  G11B2020/183 ,  G11B2020/1869 ,  G11B2220/20

    摘要： An information recording and reproducing apparatus detects deterioration in a recording medium. Structure is provided for recording information including an error correction code. A signal indicative of recorded information is received, and an error signal indicative of a number of errors that are detected is produced. This error signal is based on verification of the error correction code. The error correction code is verified using a strict clipping level, which is a level stricter than a usual level recognized as a particular signal level. This strict clipping level is compared with the signal indicative of reading areas, and error signals are produced thereby. When the error signal indicates a number of errors greater than a predetermined number, each sector is checked to determine if it is a bad sector. Each bad sector is recorded with a mark signal that indicates a bad sector. Before writing on the disk, each target sector is read verified using the strict clipping level, and mark signals indicative of a bad sector are recorded on any bad sectors. According to another aspect, the read verify operation is also carried out for a directory sector to ensure that the directory sector is correct.

    摘要翻译： 信息记录和再现装置检测记录介质的劣化。 提供了用于记录包括纠错码的信息的结构。 接收到表示记录信息的信号，产生表示检测出的错误数的误差信号。 该错误信号基于纠错码的验证。 使用严格限幅电平验证纠错码，该电平比被识别为特定信号电平的通常电平更严格。 将该严格限幅电平与指示读取区域的信号进行比较，从而产生误差信号。 当误差信号指示大于预定数量的错误数量时，检查每个扇区以确定其是否是坏扇区。 每个坏扇区都记录有一个标记信号，表示一个坏扇区。 在写入磁盘之前，使用严格的限幅电平对每个目标扇区进行读取验证，并将指示不良扇区的信号记录在任何坏扇区上。 根据另一方面，还为目录扇区执行读取验证操作，以确保目录扇区是正确的。

    Method and device for testing defect using SEM
    59.
    发明授权
    Method and device for testing defect using SEM 有权
    使用SEM测试缺陷的方法和装置

    公开(公告)号：US09390490B2

    公开(公告)日：2016-07-12

    申请号：US13520210

    申请日：2010-12-22

    申请人： Yuji Takagi ,  Minoru Harada ,  Ryo Nakagaki ,  Naoki Hosoya ,  Toshifumi Honda ,  Takehiro Hirai

    发明人： Yuji Takagi ,  Minoru Harada ,  Ryo Nakagaki ,  Naoki Hosoya ,  Toshifumi Honda ,  Takehiro Hirai

    IPC分类号： H04N7/18 ,  G06T7/00 ,  H01L21/66

    CPC分类号： G06T7/001 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In performing a programmed-point inspection of a circuit pattern using a review SEM, stable inspection can be performed while suppressing the generation of a false report even when a variation in a circuit pattern to be inspected is large. SEM images that are obtained by sequentially imaging a predetermined circuit pattern using the review SEM are stored into a storage unit. Images that meet a set condition are selected from the stored SEM images, and averaged to create an average image (GP image). By performing pattern check by GP comparison using this GP image, an inspection can be performed while suppressing the generation of a false report even when a variation in the circuit patterns is large.

    摘要翻译： 在使用复查SEM执行电路图案的编程点检查时，即使在要检查的电路图案的变化大的情况下，也可以抑制误报的产生而进行稳定的检查。 通过使用评价SEM将预定电路图案顺序成像获得的SEM图像存储在存储单元中。 从存储的SEM图像中选择满足设定条件的图像，并平均以创建平均图像（GP图像）。 通过使用该GP图像通过GP比较进行模式检查，即使当电路图案的变化大时也可以在抑制伪报告的产生的同时执行检查。

    Semiconductor device defect inspection method and system thereof
    60.
    发明授权
    Semiconductor device defect inspection method and system thereof 有权
    半导体器件缺陷检查方法及其系统

    公开(公告)号：US09153020B2

    公开(公告)日：2015-10-06

    申请号：US14119138

    申请日：2012-04-27

    申请人： Yuji Takagi

    发明人： Yuji Takagi

    IPC分类号： G06K9/00 ,  G06T7/00 ,  H01L21/66

    CPC分类号： G06T7/0008 ,  H01J2237/2817 ,  H01L22/12

    摘要： Provided are a semiconductor device defect inspection method and system thereof, with which predetermined hot spots are inspected using a SEM, and with which the frequency of defects occurring at the hot spot is estimated statistically and with reliability. An inspection point is designated in design data by the defect type. A plurality of pre-designated inspection points is selected by the defect type from the designated inspection points. The plurality of pre-designated inspection points by defect type thus selected are image captured by the inspection points. A defect ratio, which is a ratio of the plural inspection points which are image captured by the defect type to the plural defects detected, and a reliability interval of the defect ratio which is computed by the defect type is compared with a preset reference value. A defect type having a defect occurrence ratio which exceeds the reference value is derived.

    摘要翻译： 提供了一种半导体器件缺陷检查方法及其系统，利用SEM对该预定热点进行检查，利用该半导体器件缺陷检查方法和系统可靠地估计在热点处发生的缺陷的频率。 缺陷类型在设计数据中指定检查点。 通过来自指定检查点的缺陷类型来选择多个预先指定的检查点。 由这样选择的缺陷类型的多个预先指定的检查点是由检查点捕获的图像。 将由缺陷类型捕获的多个检查点与检测到的多个缺陷的多个检查点的比率和通过缺陷类型计算的缺陷率的可靠性间隔的比率与预设的参考值进行比较。 导出具有超过参考值的缺陷发生率的缺陷类型。