公开(公告)号：US20120119690A1

公开(公告)日：2012-05-17

申请号：US13386966

申请日：2011-02-15

申请人： Noriyoshi Nishiyama ,  Makoto Kitabatake

发明人： Noriyoshi Nishiyama ,  Makoto Kitabatake

IPC分类号： H02P6/08 ,  H02K3/28

CPC分类号： H02K1/146 ,  H02K3/20 ,  H02K3/28 ,  H02K21/16 ,  H02K21/222 ,  H02P6/10 ,  H02P25/18

摘要： A synchronous motor drive system improves the design flexibility regarding torque characteristics as compared with conventionally available design flexibility. A synchronous motor has a rotor and a stator. Each of at least two adjacent stator teeth has a slit formed at the tip thereof. Each of a plurality of stator teeth has a main coil wound therearound in concentrated winding. Between each two adjacent teeth having a slit, a sub-coil is wound around in a manner of being accommodated in the respective slits. The drive device separately controls electric current supplied to the main coils and electric current supplied to the sub-coil.

摘要翻译： 与常规可用的设计灵活性相比，同步电机驱动系统提高了转矩特性的设计灵活性。 同步电动机具有转子和定子。 至少两个相邻的定子齿中的每一个在其尖端处形成有狭缝。 多个定子齿中的每一个具有卷绕在集中绕组上的主线圈。 在具有狭缝的每个两个相邻齿之间，子线圈以容纳在各个狭缝中的方式缠绕。 驱动装置分别控制供给主线圈的电流和供给到副线圈的电流。

公开(公告)号：US06692327B1

公开(公告)日：2004-02-17

申请号：US09480415

申请日：2000-01-11

申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

IPC分类号： H01J902

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J2201/30446

摘要： An electron emission element includes a substrate, a cathode electrode formed on the substrate, an anode electrode disposed so as to be opposed to the cathode electrode, an electron emission member disposed on the cathode electrode, a control electrode disposed between the cathode electrode and the anode electrode, and an insulating layer. The electron emission member includes a first member having a hole and a second member filling the hole, wherein the second member is more likely to emit electrons than the first member.

摘要翻译： 电子发射元件包括基板，形成在基板上的阴极电极，与阴极相对设置的阳极电极，设置在阴极电极上的电子发射部件，设置在阴极电极和阴极电极之间的控制电极， 阳极电极和绝缘层。 电子发射构件包括具有孔的第一构件和填充孔的第二构件，其中第二构件比第一构件更可能发射电子。

公开(公告)号：US06350999B1

公开(公告)日：2002-02-26

申请号：US09449525

申请日：1999-11-29

申请人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

发明人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

IPC分类号： H01L310328

CPC分类号： H01J1/308

摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

摘要翻译： 在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。 表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。

公开(公告)号：US06273950B1

公开(公告)日：2001-08-14

申请号：US09753412

申请日：2001-01-02

申请人： Makoto Kitabatake

发明人： Makoto Kitabatake

IPC分类号： C30B2502

CPC分类号： H01L29/872 ,  C30B29/36 ,  C30B33/00 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47

摘要： A method for manufacturing a device of silicon carbide (SiC) and a single crystal thin film, which are wide band gap semiconductor materials and can be applied to semiconductor devices such as high power devices, high temperature devices, and environmentally resistant devices, is provided by heating a silicon carbide crystal in an oxygen atmosphere to form a silicon (di)oxide thin film on a silicon carbide crystal surface, and etching the silicon (di)oxide thin film formed on the silicon carbide crystal surface to prepare a clean SiC surface. The above SiC device comprises a clean surface having patterned steps and terraces, has a surface defect density of 108 cm−2 or less, or has at least a layered structure in which an n-type silicon carbide crystal is formed on an n-type Si substrate surface.

摘要翻译： 提供了一种制造宽带隙半导体材料的碳化硅（SiC）和单晶薄膜的器件的方法，可以应用于诸如大功率器件，高温器件和耐环境器件的半导体器件 通过在氧气氛中加热碳化硅晶体以在碳化硅晶体表面上形成硅（di）氧化物薄膜，并蚀刻形成在碳化硅晶体表面上的硅（di）氧化物薄膜，以制备清洁的SiC表面 。 上述SiC器件包括具有图案化台阶和台阶的清洁表面，其表面缺陷密度为108cm -2以下，或至少具有在n型上形成n型碳化硅晶体的层状结构 Si衬底表面。

公开(公告)号：US5814194A

公开(公告)日：1998-09-29

申请号：US542008

申请日：1995-10-12

申请人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

发明人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

IPC分类号： C30B33/00 ,  C30B33/12

CPC分类号： C30B33/00 ,  C30B29/04 ,  H01J2237/0812 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。

公开(公告)号：US5605860A

公开(公告)日：1997-02-25

申请号：US374207

申请日：1995-01-18

申请人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Makoto Kitabatake ,  Takasi Hirao

发明人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Makoto Kitabatake ,  Takasi Hirao

IPC分类号： H01L21/20 ,  H01L43/06 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L21/02381 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02549 ,  H01L21/02631 ,  H01L43/065 ,  Y10S438/974

摘要： A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

摘要翻译： 通过制备具有由Si的单晶组成的表面的衬底来开始制造半导体薄膜的方法。 该表面具有氧化膜。 然后，除去氧化膜。 表面上的Si原子的悬挂键用氢原子终止。 在由Al，Ga和In组成的组中选出的至少一种的氢原子的单结晶的基板上形成初始层。 在初始层上形成至少含有In和Sb的缓冲层。 至少含有In和Sb的半导体薄膜在高于开始形成缓冲层的温度的温度下形成在缓冲层上。 还公开了一种制造霍尔效应器件的方法。 通过利用上述制造方法形成半导体薄膜来开始该方法。 然后，电极附着在薄膜上。

公开(公告)号：US08363440B2

公开(公告)日：2013-01-29

申请号：US12864856

申请日：2009-12-16

申请人： Masaki Tagome ,  Makoto Kitabatake ,  Shun Kazama

发明人： Masaki Tagome ,  Makoto Kitabatake ,  Shun Kazama

IPC分类号： H02M7/537 ,  H02P1/00

CPC分类号： H02M1/28

摘要： In a power conversion circuit operating with high frequency, an off-voltage control circuit 101u of a lower-arm gate drive circuit 24u controls the output voltage of a gate drive power supply 103u to change the output voltage to a voltage lower than a predetermined off voltage during a time period from termination of turn-off operation of a lower arm 22u until start of turn-on operation of an upper arm 21u, and thereafter return the output voltage to the predetermined off voltage immediately after termination of the turn-on operation of the upper arm 21u. With this control, short-circuiting through the upper and lower arms occurring due to a high voltage change dv/dt can be avoided, and the life of a switching element constituting the power conversion circuit improves, increasing the reliability of the power conversion circuit.

摘要翻译： 在以高频工作的电力转换电路中，下臂栅极驱动电路24u的截止电压控制电路101u控制栅极驱动电源103u的输出电压，将输出电压变更为低于预定的电压 在从下臂22u的关断动作结束到上臂21u的接通动作开始的期间的电压，然后在接通动作结束后立即将输出电压返回到规定的关闭电压 的上臂21u。 通过该控制，可以避免由于高电压变化dv / dt而产生的上臂和下臂的短路，并且构成功率转换电路的开关元件的寿命提高，从而提高了电力转换电路的可靠性。

公开(公告)号：US20110260656A1

公开(公告)日：2011-10-27

申请号：US13133775

申请日：2010-11-18

申请人： Shun Kazama ,  Makoto Kitabatake ,  Masaki Tagome

发明人： Shun Kazama ,  Makoto Kitabatake ,  Masaki Tagome

IPC分类号： H02P6/04 ,  H02M1/15 ,  H02P6/10 ,  H02J3/01

CPC分类号： H02M7/53871 ,  B60L1/003 ,  B60L1/02 ,  B60L11/1803 ,  B60L15/08 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2220/16 ,  B60L2220/46 ,  B60L2270/147 ,  H02M2001/008 ,  H02P27/08 ,  Y02T10/644 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/7241 ,  Y10T307/406

摘要： Provided is a small-sized load drive system which, even with three three-phase inverters, significantly reduces noise regardless of control duty ratio. The load drive system includes three-phase inverters 301 to 303, and first, second, and third control units 401 to 403. The inverters 301 to 303 are connected to loads 211 to 213, respectively. The first control unit 401 generates sawtooth wave voltage and controls the inverter 301 according to the sawtooth wave voltage. The second control unit 402 generates inverse sawtooth wave voltage and controls the inverter 302 according to the inverse sawtooth wave voltage. The third control unit 403 generates triangular wave voltage which has ramps respectively equal to the sawtooth/inverse sawtooth wave voltage and either has a same phase or is out of phase by half a period relative to the sawtooth/inverse sawtooth wave voltage, and also controls the inverter 303 according to the triangular wave voltage.

摘要翻译： 提供了一种小型负载驱动系统，即使使用三个三相逆变器，无论控制占空比如何，都能显着降低噪声。 负载驱动系统包括三相逆变器301至303以及第一，第二和第三控制单元401至403。反相器301至303分别连接到负载211至213。 第一控制单元401产生锯齿波电压，并根据锯齿波电压控制反相器301。 第二控制单元402产生反锯齿波电压，并根据反锯齿波电压控制逆变器302。 第三控制单元403产生三角波电压，该三角波电压具有分别等于锯齿波/反锯齿波电压的斜坡，并且相对于锯齿波/反锯齿波电压具有相同相位或相位相差一半的周期，并且还控制 逆变器303根据三角波电压。

公开(公告)号：US20100301784A1

公开(公告)日：2010-12-02

申请号：US12864856

申请日：2009-12-16

申请人： Masaki Tagome ,  Makoto Kitabatake ,  Shun Kazama

发明人： Masaki Tagome ,  Makoto Kitabatake ,  Shun Kazama

IPC分类号： H02P1/02

CPC分类号： H02M1/28

摘要： In a power conversion circuit operating with high frequency, an off-voltage control circuit 101u of a lower-arm gate drive circuit 24u controls the output voltage of a gate drive power supply 103u to change the output voltage to a voltage lower than a predetermined off voltage during a time period from termination of turn-off operation of a lower arm 22u until start of turn-on operation of an upper arm 21u, and thereafter return the output voltage to the predetermined off voltage immediately after termination of the turn-on operation of the upper arm 21u. With this control, short-circuiting through the upper and lower arms occurring due to a high voltage change dv/dt can be avoided, and the life of a switching element constituting the power conversion circuit improves, increasing the reliability of the power conversion circuit.

摘要翻译： 在以高频工作的电力转换电路中，下臂栅极驱动电路24u的截止电压控制电路101u控制栅极驱动电源103u的输出电压，将输出电压变更为低于预定的电压 在从下臂22u的关断动作结束到上臂21u的接通动作开始的期间的电压，然后在接通动作结束后立即将输出电压返回到规定的关闭电压 的上臂21u。 通过该控制，可以避免由于高电压变化dv / dt而产生的上臂和下臂的短路，并且构成功率转换电路的开关元件的寿命提高，从而提高了电力转换电路的可靠性。

公开(公告)号：US20090309215A1

公开(公告)日：2009-12-17

申请号：US12373024

申请日：2007-09-13

申请人： Makoto Kitabatake

发明人： Makoto Kitabatake

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： H01L23/3672 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/15312 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor module (10) includes a heat sink (1), an electronic component (2), a semiconductor device (3), and a thermally-conductive sheet member (4). The thermally-conductive sheet member (4) covers a part of the semiconductor device (3) and has a lower part (4b) and a side part (4c). The lower part (4b) is in contact with a mounting face (11a) of the heat sink (1). The side part (4c) extends from the lower part (4b) and covers a first side surface (3c) of the semiconductor device (3). The electronic component (2) is disposed across the side part (4c) of the thermally-conductive sheet member (4) from the semiconductor device (3).

摘要翻译： 半导体模块（10）包括散热器（1），电子部件（2），半导体器件（3）和导热片部件（4）。 导热片部件（4）覆盖半导体器件（3）的一部分并且具有下部（4b）和侧部（4c）。 下部（4b）与散热片（1）的安装面（11a）接触。 侧部（4c）从下部（4b）延伸并覆盖半导体器件（3）的第一侧表面（3c）。 电子部件（2）从半导体器件（3）横跨导热片部件（4）的侧部（4c）。