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51.发明授权公开(公告)号：US07560726B2
公开(公告)日：2009-07-14
申请号：US10364987
申请日：2003-02-11
申请人： Raymond G. Beausoleil , Adrian P. Kent , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams
发明人： Raymond G. Beausoleil , Adrian P. Kent , Philip J. Kuekes , William J. Munro , Timothy P. Spiller , R. Stanley Williams
IPC分类号： H01J40/14
CPC分类号： B82Y10/00 , G06N99/002
摘要： Quantum information processing structures and methods use photons and four-level matter systems in electromagnetically induced transparency (EIT) arrangements for one and two-qubit quantum gates, two-photon phase shifters, and Bell state measurement devices. For efficient coupling of the matter systems to the photons while decoupling the matter systems from the phonon bath, molecular cages or molecular tethers maintain the atoms within the electromagnetic field of the photon, e.g., in the evanescent field surrounding the core of an optical fiber carrying the photons. To reduce decoherence caused by spontaneous emissions, the matter systems can be embedded in photonic bandgap crystals or the matter systems can be selected to include metastable energy levels.
摘要翻译： 量子信息处理结构和方法使用光子和四级物质系统在一个和两个量子位量子门，双光子移相器和贝尔状态测量装置的电磁感应透明度（EIT）布置中。 为了将物质系统有效耦合到光子，同时将物质系统与声子浴解耦，分子笼或分子系链将原子保持在光子的电磁场内，例如在包含光纤的纤芯的周围的消逝场中 光子。 为了减少由自发辐射引起的去相干，物质系统可以嵌入光子带隙晶体中，或者可以选择物质系统来包括亚稳态能级。
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公开(公告)号：US07050659B1
公开(公告)日：2006-05-23
申请号：US11096670
申请日：2005-03-31
IPC分类号： G02F1/295
CPC分类号： G02F1/3511 , G02F1/0541 , G02F1/29 , G02F1/365 , G02F2202/13 , G02F2202/32
摘要： Controlling the propagation of electromagnetic radiation is described. A photonic bandgap medium is placed in the path of the electromagnetic radiation, the photonic bandgap medium comprising a photorefractive material. Control radiation is projected onto a surface of the photonic bandgap medium. The control radiation spatially varies a refractive index of the photorefractive material to control propagation of the electromagnetic radiation through the photonic bandgap medium.
摘要翻译： 描述控制电磁辐射的传播。 光子带隙介质放置在电磁辐射的路径中，光子带隙介质包括光折射材料。 控制辐射投影到光子带隙介质的表面上。 控制辐射在空间上改变光折射材料的折射率，以控制通过光子带隙介质的电磁辐射的传播。
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公开(公告)号：US07030408B1
公开(公告)日：2006-04-18
申请号：US09699080
申请日：2000-10-26
IPC分类号： H01L35/24
CPC分类号： H01L27/285 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C13/0014 , G11C13/02 , G11C2213/17 , G11C2213/77 , G11C2213/81 , H01L29/167 , H01L29/73 , H01L51/0595 , Y10S977/762 , Y10S977/936
摘要： Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed. Analogously, one wire may comprise doped semiconductor, such as silicon, and the other wire a metal, the doped silicon wire forming the source and drain and the metal wire forming the gate by modulation doping on the doped silicon wire where the wires cross, between the source and drain, to form a field effect transistor. Both P-channel and N-channel FETs may be formed. The construction of both bipolar transistors and FETs on a nanometer scale, which are self-aligned and modulation-doped, is thereby enabled.
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公开(公告)号：US06903366B2
公开(公告)日：2005-06-07
申请号：US10699172
申请日：2003-10-31
IPC分类号： B81B7/04 , B82B1/00 , G01R31/28 , G11C13/02 , H01L21/00 , H01L23/532 , H01L27/10 , H01L29/861 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L29/06
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译： 提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。 该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。 本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。 本发明能够通过直接且廉价的化学组装程序在长度尺度上构建分子电子器件，其尺寸范围可以从微米到纳米。 该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。
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公开(公告)号：US06559468B1
公开(公告)日：2003-05-06
申请号：US09699269
申请日：2000-10-26
IPC分类号： H01L2906
CPC分类号： H01L27/285 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C13/0014 , G11C13/02 , G11C2213/17 , G11C2213/77 , G11C2213/81 , H01L29/167 , H01L29/73 , H01L51/0595 , Y10S977/762 , Y10S977/936
摘要： Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed. Analogously, one wire may comprise doped semiconductor, such as silicon, and the other wire a metal, the doped silicon wire forming the source and drain and the metal wire forming the gate by modulation doping on the doped silicon wire where the wires cross, between the source and drain, to form a field effect transistor. Both P-channel and N-channel FETs may be formed. The construction of both bipolar transistors and FETs on a nanometer scale, which are self-aligned and modulation-doped, is thereby enabled.
摘要翻译： 提供双极和场效应分子线晶体管。 分子线晶体管包括一对交叉导线，其中至少一根导线包括掺杂的半导体材料。 一对交叉线形成一条线交叉另一条线的连接处，一条线路上设有路易斯酸官能团，另一条线路上设有路易斯碱官能团。 如果两根导线都是诸如硅的掺杂半导体，则一个是P掺杂的，另一个是N掺杂的。 给定掺杂的一条导线包括发射极和集电极部分，另一条导线包括基部，该基部通过在包含发射极和集电极的导线上的调制掺杂形成，其中导线交叉并且在发射极和集电极部分之间， 从而形成双极晶体管。 可以形成NPN和PNP双极晶体管。 类似地，一条导线可以包括诸如硅的掺杂半导体，而另一条导线是金属，形成源极和漏极的掺杂硅线和金属线通过在掺杂的硅线上的调制掺杂形成栅极，其中电线交叉， 源极和漏极，形成场效应晶体管。 可以形成P沟道和N沟道FET。 因此能够实现自对准和调制掺杂的纳米尺度的双极晶体管和FET的构造。
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公开(公告)号：US06459095B1
公开(公告)日：2002-10-01
申请号：US09282048
申请日：1999-03-29
IPC分类号： H01L2906
CPC分类号： H01L27/10 , B82B1/00 , B82Y10/00 , B82Y30/00 , G11C13/0009 , G11C13/0014 , G11C13/02 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01L51/0595 , Y10S977/704 , Y10S977/705 , Y10S977/936
摘要： A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.
摘要翻译： 提供了制造电子器件的途径，其中器件由夹着电可寻址分子种类的两条交叉导线组成。 该方法实现起来非常简单和便宜，并且从几微米的线尺寸缩小到纳米级尺寸。 本发明的装置可用于产生交叉开关阵列，逻辑器件，存储器件以及通信和信号路由器件。 本发明能够通过直接且廉价的化学组装程序在比例范围从微米到纳米的范围内构建分子电子器件。 该装置部分或完全化学地组装，并且缩放的关键在于，一旦装置组装而不是装配之前，基板上的装置的位置被定义。
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57.发明授权Molecular-wire crossbar interconnect (MWCI) for signal routing and communications 失效用于信号路由和通信的分子线交叉互连（MWCI）公开(公告)号：US06314019B1
公开(公告)日：2001-11-06
申请号：US09280225
申请日：1999-03-29
IPC分类号： G11C1100
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0009 , G11C2213/34 , G11C2213/77 , G11C2213/81 , Y10S977/708 , Y10S977/762 , Y10S977/765 , Y10S977/936
摘要： A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and self-assembling and comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting the pair of crossed wires in the junction. The connector species comprises a bi-stable molecule. Each level comprises at least one group of switches and each group of switches comprises at least one switch, with each group in the first level connected to all other groups in the second level in an all-to-all configuration to provide a scalable, defect-tolerant, fat-tree networking scheme. The primary advantage is ease of fabrication, because an active switch is formed any time two wires cross. This saves tremendously on circuit area (a factor of a few times ten), since no other wires or ancillary devices are needed to operate the switch or store the required configuration. This reduction of the area of a configuration bit and its switch to just the area of two crossing wires is a major advantage in constructing a defect-tolerant interconnect network.
摘要翻译： 提供了用于分子线交叉开关中的信号路由和第一级和第二级之间的通信的分子线交叉开关互连。 分子线交叉杆包括多个纳米级开关的二维阵列。 每个开关是可重构和自组装的，并且包括一对交叉线，其形成一条线与另一条线交叉的连接处，以及至少一个在连接处连接一对交叉线的连接器种类。 连接器种类包括双稳态分子。 每个级别包括至少一组交换机，并且每组交换机包括至少一个交换机，其中第一级别中的每个组以全对齐配置连接到第二级别中的所有其他组，以提供可扩展的缺陷 不容忍，胖树联网方案。 主要优点是易于制造，因为在任何时候两根线交叉时形成有源开关。 由于不需要其他电线或辅助设备来操作交换机或存储所需的配置，因此可大大节省电路面积（十倍）。 配置位区域的这种减少及其切换到两条交叉电线的区域是构建容错互连网络的主要优点。
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公开(公告)号：US08004876B2
公开(公告)日：2011-08-23
申请号：US10233232
申请日：2002-08-30
IPC分类号： G11C11/00
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/34 , G11C2213/77 , G11C2213/81
摘要： A computing system for implementing at least one electronic circuit with gain comprises at least one two-dimensional molecular switch array. The molecular switch array is formed by assembling two or more crossed planes of wires into a configuration of devices. Each device comprises a junction formed by a pair of crossed wires and at least one connector species that connects the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, and includes a switching capability provided by both (1) one or more connector species and the pair of crossed wires and (2) a configurable nano-scale wire transistor having a first state that functions as a transistor and a second state that functions as a conducting semiconductor wire. Specific connections are made to interconnect the devices and connect the devices to two structures that provide high and low voltages.
摘要翻译： 用于实现具有增益的至少一个电子电路的计算系统包括至少一个二维分子开关阵列。 分子开关阵列通过将两个或更多个交叉的导线平面组装成器件的配置而形成。 每个装置包括由一对交叉线形成的连接点和连接该连接处的一对交叉线的至少一个连接器种类。 该结具有纳米的功能尺寸，并且包括由（1）一个或多个连接器种类和一对交叉导线提供的切换能力，以及（2）具有第一状态的可配置纳米级线晶体管，其具有作为 晶体管和作为导电半导体线的第二状态。 进行具体的连接来连接设备并将设备连接到提供高和低电压的两个结构。
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公开(公告)号：US07786467B2
公开(公告)日：2010-08-31
申请号：US11114307
申请日：2005-04-25
IPC分类号： H01L31/00
CPC分类号： H04L49/40 , B82Y10/00 , G11C13/02 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H04L49/101 , Y10S977/762 , Y10S977/767
摘要： Various embodiments of the present invention include three-dimensional, at least partially nanoscale, electronic circuits and devices in which signals can be routed in three independent directions, and in which electronic components can be fabricated at junctions interconnected by internal signal lines. The three-dimensional, at least partially nanoscale, electronic circuits and devices include layers, the nanowire or microscale-or-submicroscale/nanowire junctions of each of which may be economically and efficiently fabricated as one type of electronic component. Various embodiments of the present invention include nanoscale memories, nanoscale programmable arrays, nanoscale multiplexers and demultiplexers, and an almost limitless number of specialized nanoscale circuits and nanoscale electronic components.
摘要翻译： 本发明的各种实施例包括三维，至少部分纳米级的电子电路和装置，其中信号可以在三个独立的方向上布线，并且其中电子部件可以在通过内部信号线互连的连接点处制造。 三维，至少部分纳米级的电子电路和器件包括层，其中每一个的纳米线或微米级或亚微米级/纳米线结可以经济地和有效地制造为一种类型的电子部件。 本发明的各种实施例包括纳米级存储器，纳米尺度可编程阵列，纳米级多路复用器和解复用器，以及几乎无限数量的专用纳米尺度电路和纳米级电子部件。
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60.发明申请公开(公告)号：US20100094580A1
公开(公告)日：2010-04-15
申请号：US12288021
申请日：2008-10-15
IPC分类号： G01R31/00
CPC分类号： G01R31/317
摘要： Embodiments of the present invention are directed to cost-effective defect amelioration in manufactured electronic devices that include nanoscale components. Certain embodiments of the present invention are directed to amelioration of defects in electronic devices that contain nanoscale demultiplexers. In certain embodiments of the present invention, the nanoscale-demultiplexer-containing devices include reconfigurable encoders. In one embodiment of the present invention, the table of codes within a reconfigurable encoder is permuted, and a device is configured in accordance with the permuted codes, in order to produce a permuted table of codes that, when input to an appropriately configured nanoscale demultiplexer, produces correct outputs despite defects in the nanoscale demultiplexer.
摘要翻译： 本发明的实施例涉及在包括纳米级组件的制造的电子设备中的经济有效的缺陷改善。 本发明的某些实施例涉及改善包含纳米级解复用器的电子设备中的缺陷。 在本发明的某些实施例中，含纳米级解复用器的装置包括可重构编码器。 在本发明的一个实施例中，可重构编码器内的代码表被置换，并且根据置换代码配置器件，以便产生置换的代码表，当输入到适当配置的纳米级解复用器 ，尽管纳米级解复用器中存在缺陷，但仍能产生正确的输出。
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