公开(公告)号：US10916545B2

公开(公告)日：2021-02-09

申请号：US16354369

申请日：2019-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dae Won Ha ,  Yoon Moon Park ,  Keun Hwi Cho

IPC: H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor including a single first active fin disposed in the first region, a first gate electrode intersecting the single first active fin, and a single first source/drain layer disposed in the first recess of the single first active fin, and a second transistor including a plurality of second active fins disposed in the second region, a second gate electrode intersecting the plurality of second active fins, and a plurality of second source/drain layers disposed in the second recesses of the plurality of second active fins. The single first active fin and the plurality of second active fins may have a first conductivity type, and a depth of the first recess may be less than a depth of each of the second recesses.

公开(公告)号：US20200013784A1

公开(公告)日：2020-01-09

申请号：US16454532

申请日：2019-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GUK IL AN ,  Keun Hwi Cho ,  Sung Min Kim ,  Yoon Moon Park

IPC: H01L27/1159 ,  H01L27/11592

Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first interfacial layer disposed on the substrate in the first region and having a first thickness; a second interfacial layer disposed on the substrate in the second region, wherein the second interfacial layer includes a second thickness that is smaller than the first thickness; a first gate insulating layer disposed on the first interfacial layer and including a first ferroelectric material layer; a second gate insulating layer disposed on the second interfacial layer; a first gate electrode disposed on the first gate insulating layer; and a second gate electrode disposed on the second gate insulating layer.