公开(公告)号：US06951585B2

公开(公告)日：2005-10-04

申请号：US10397310

申请日：2003-03-27

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida ,  Yasuyoshi Takai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida ,  Yasuyoshi Takai

IPC分类号： C30B19/02 ,  H01L31/18 ,  C30B19/10

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

摘要： A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.

摘要翻译： 一种液晶生长方法，用于将熔融物中的多晶衬底浸入其中溶解晶体成分的坩埚中，从而在基底上生长多晶体，包括将多晶生长至预定厚度的第一步骤和用于熔化的第二步骤 将在熔体中第一步生长的一部分多晶体返回，其中在第一步骤和第二步骤之间改变衬底和熔体之间的相对位置，使不同温度的熔体与多晶表面接触。 所获得的多晶体具有与常规太阳能电池中使用的多晶体的性能相当的特性，但在应用于太阳能电池的情况下几乎没有诸如栅电极的线断线等故障的风险，并且可以以低成本大量获得。

公开(公告)号：US5273851A

公开(公告)日：1993-12-28

申请号：US780780

申请日：1991-10-23

申请人： Tetsuya Takei ,  Shigeru Shirai ,  Hirokazu Ootoshi ,  Ryuji Okamura ,  Yasuyoshi Takai

发明人： Tetsuya Takei ,  Shigeru Shirai ,  Hirokazu Ootoshi ,  Ryuji Okamura ,  Yasuyoshi Takai

IPC分类号： G03G5/08 ,  C23C16/30 ,  G03G5/082 ,  G03G5/14

CPC分类号： C23C16/30 ,  G03G5/08221

摘要： An electrophotographic light-receiving member comprises a substrate, a photoconductive layer formed on the substrate and composed of a non-single crystal material containing a base component silicon atoms and a surface layer (surface-side region) made of a non-single crystal material containing silicon, carbon and hydrogen atoms, in which the ratio of silicon atoms having at least one bond to a carbon atom in the surface layer is at least 50% of the total number of silicon atoms. The electrophotographic light-receiving member has good initial electrophotographic properties and particularly good durability under a high-humidity environment.

摘要翻译： 电子照相受光部件包括：基板，形成在基板上的由非晶单晶材料构成的光电导层和由非单晶材料构成的表面层（表面侧区域） 含有硅，碳和氢原子，其中具有至少一个键的硅原子与表面层中的碳原子的比例为硅原子总数的至少50％。 电摄影光接收元件在高湿度环境下具有良好的初始电子照相特性和特别好的耐久性。

公开(公告)号：US5232507A

公开(公告)日：1993-08-03

申请号：US876472

申请日：1992-04-30

申请人： Hirokazu Ohtoshi ,  Tetsuya Takei ,  Ryuji Okamura ,  Yasuyoshi Takai

发明人： Hirokazu Ohtoshi ,  Tetsuya Takei ,  Ryuji Okamura ,  Yasuyoshi Takai

IPC分类号： C08J7/00 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32743 ,  H01J2237/3321

摘要： An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.

摘要翻译： 用微波等离子体CVD方法形成沉积膜的装置包括一个反应器容器，在该反应容器中压力可以减小，用于将源气体供应到反应器容器中的装置，用于将微波引入反应器容器并激发微波放电等离子体的装置 ，以及用于保持多个基板以包围形成在反应容器内的放电空间的装置，其特征在于包括：保持构件，其保持用于将微波引入反应器容器的电介质窗口，用于形成沉积膜的基板 设置成围绕电介质窗口和用于冷却电介质窗口的冷却装置，以及用于在真空环境中将保持构件输入和流出反应容器的输送装置。

公开(公告)号：US09689974B2

公开(公告)日：2017-06-27

申请号：US12937535

申请日：2009-04-03

申请人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

发明人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

IPC分类号： A61B8/14 ,  G01S7/52 ,  G01S15/89

CPC分类号： G01S7/52049 ,  G01S15/8952

摘要： An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.

公开(公告)号：US08530246B2

公开(公告)日：2013-09-10

申请号：US12992073

申请日：2009-05-11

申请人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/331 ,  G01R31/26

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

摘要翻译： 用于控制具有至少半导体作为分量的半导体元件的阈值电压的方法的特征在于包括测量作为阈值电压的指标的阈值电压和特征值之一的处理; 基于所测量的阈值电压和作为阈值电压的指标的测量特征值之一来确定用于照射半导体的光的照射强度，照射时间和波长之一的处理; 以及将照射强度，照射时间和波长中的一个已经确定到半导体上的光照射的过程; 其中照射半导体的光是比半导体的吸收边缘的波长长的波长的光，并且通过光的照射来改变阈值电压。

公开(公告)号：US08513662B2

公开(公告)日：2013-08-20

申请号：US12992071

申请日：2009-05-11

申请人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L29/72

CPC分类号： H01L29/78645 ,  H01L29/78633

摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

摘要翻译： 提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变 光由调光机构调节。

公开(公告)号：US08507360B2

公开(公告)日：2013-08-13

申请号：US12611770

申请日：2009-11-03

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0079

摘要： A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.

摘要翻译： 一种方法包括在第一基板和区域上将预定厚度的接合层布置在接合在分离层上的第一功能区域中，该第一功能区域能够在经受处理时落入可释放状态中， 第一功能区域将被转移到第二基板上; 通过所述接合层将所述第一功能区域结合到所述第二基板; 以及在所述剥离层处将所述第一衬底与所述第一功能区分离。

公开(公告)号：US08084331B2

公开(公告)日：2011-12-27

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/331

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US07534628B2

公开(公告)日：2009-05-19

申请号：US11871534

申请日：2007-10-12

申请人： Yasuyoshi Takai ,  Tadashi Sawayama ,  Koichiro Moriyama

发明人： Yasuyoshi Takai ,  Tadashi Sawayama ,  Koichiro Moriyama

IPC分类号： H01L21/00 ,  H01L21/324 ,  C23C14/00

CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/509 ,  C23C16/545 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A method for forming a semiconductor device including a semiconductor layer, formed of a silicon-based deposited film containing crystals by plasma-enhanced CVD, includes the steps of applying a bias voltage between a high-frequency electrode and a substrate with the high-frequency electrode being negative when the semiconductor layer is formed; detecting sparks occurring on the high-frequency electrode or the substrate; and controlling at least one condition, selected from the group consisting of high-frequency power, bias voltage, bias current, pressure, gas flow rate, and interelectrode distance, based on the results of the detection so that the number of sparks with durations of 100 ms or more is 1 or less sparks per minute.

摘要翻译： 一种用于形成半导体器件的方法，包括通过等离子体增强CVD由含有晶体的硅基沉积膜形成的半导体层，包括以下步骤：在高频电极和衬底之间施加高频 当形成半导体层时，电极为负极; 检测在高频电极或基板上发生的火花; 并且基于检测结果控制从由高频功率，偏置电压，偏置电流，压力，气体流量和电极间距离组成的组中选择的至少一个条件，使得具有持续时间的火花的数量 100 ms以上是每分钟1次以下的火花。

公开(公告)号：US20090114155A1

公开(公告)日：2009-05-07

申请号：US12327403

申请日：2008-12-03

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23C16/46

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).