摘要:
According to an aspect of the invention, a light-emitting element includes a shift thyristor, a light emitting thyristor, and a vertical type gate load resistor. The shift thyristor includes a first anode layer, a first gate layer, and a first cathode layer. The light-emitting thyristor includes a second anode layer, a second gate layer, and a second cathode layer. The vertical type gate load resistor is arranged on the first gate layer under a power line and limits a current flowing from the first gate layer and the second gate layer to the power line.
摘要:
A light-emitting element head includes: plural light-emitting element array chips that are divided into plural groups and that each are provided with light-emitting elements arranged in an array; a signal generation unit that generates a light-emission control signal for controlling blinking of the light-emitting elements, and an identification signal for identifying which of the light-emitting element array chips in each of the groups the light-emission control signal is for; signal lines through which the light-emission control signal and the identification signal are transmitted; and identification signal discrimination units that are connected to the signal lines and that are provided in the respective light-emitting element array chips, each of the identification signal discrimination units discriminating the identification signal, and transmitting the light-emission control signal to the light-emitting elements.
摘要:
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
摘要:
Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer (32) is formed on a Si substrate (30). On the lattice mismatching buffer layer (32), successively stacked are an n-type AlGaAs layer (14), a p-type AlGaAs layer (16), an n-type AlGaAs layer (18), and a p-type AlGaAs layer (20) in this order. On the AlGaAs layer (20) provided is an anode electrode (22), on the AlGaAs layer (18) a gate electrode (24), on the bottom surface of the GaAs substrate a cathode electrode (26).
摘要:
Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer (32) is formed on a Si substrate (30). On the lattice mismatching buffer layer (32), successively stacked are an n-type AlGaAs layer (14), a p-type AlGaAs layer (16), an n-type AlGaAs layer (18), and a p-type AlGaAs layer (20) in this order. On the AlGaAs layer (20) provided is an anode electrode (22), on the AlGaAs layer (18) a gate electrode (24), on the bottom surface of the GaAs substrate a cathode electrode (26).
摘要:
An optical writing head in which the number of bus lines to be derived may be decreased by using a self-scanning light-emitting element array is provided. A &PHgr;1 bonding pad of each SLED chip is connected to &PHgr;1 bus line via a resistor R1, and a &PHgr;2 bonding pad of each SLED chip is connected to &PHgr;2 bus line via a resistor R2. &PHgr;S bonding pad is connected to a &PHgr;S bus line via resistor RS, and VGA bonding pad is connected to VGA bus line. &PHgr;I bonding pad of each SLED chip is connected to a corresponding one of terminal &PHgr;I(1)-&PHgr;I(56) of a connector.
摘要:
A self-scanning light-emitting element array using an end face light-emitting thyristor having improved external emission efficiency is provided. To improve the external emission efficiency of the end face light-emitting thyristor, the present invention adopts such structure that the current injected from an anode is concentrated to near the end face of the light-emitting thyristor. A self-scanning light-emitting element array is implemented by using such end face light-emitting thyristor.
摘要:
A self-scanning light-emitting device is provided in which the amounts of light of light-emitting elements may be corrected to make the distribution of amounts of light in a luminescent chip or among luminescent chips uniform. The correction for amounts of light of light-emitting elements may be carried out by regulating the time duration of on-state of a light-emitting element or the voltage of a write signal applied to a light-emitting element. According to the present invention, the distribution of amounts of light becomes uniform, so that the printing quality of a printer using such self-scanning light-emitting device is improved.
摘要:
A method of arraying self-scanning light-emitting element array chips is provided, in which it is possible to remove defective chips completely. A plurality of self-scanning light-emitting array chips in a zigzag manner on a substrate, each chip being rectangular and comprising an array of light-emitting elements arrayed in a line facing to one end of the chip and a plurality of bonding pads provided on the other end of the chip. The plurality of chips are arrayed in such a manner that one ends of neighboring chips are arranged without overlapping in an array direction of chips so that an array pitch of chips is constant, and the other ends of the chips are arranged with overlapping in a direction perpendicular to an array direction of chips so that an array pitch of chips is constant.
摘要:
A light-emitting chip includes: a substrate; plural light-emitting elements arrayed in line on the substrate, each of the light-emitting elements including a light-emitting region having a length in an array direction of the array different from a length in a direction orthogonal to the array direction; and a light-up current supplying interconnection including plural connecting portions, each of the connecting portions being provided on the light-emitting region of a corresponding one of the light-emitting elements in a shorter direction of the light-emitting region either the array direction or the direction orthogonal to the array direction, each of the connecting portions being connected to an electrode provided on the light-emitting region, the light-up current supplying interconnection supplying a current for lighting up to the plural light-emitting elements through the plural connecting portions.