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    IMAGE PROCESSING DEVICE AND IMAGE FORMING DEVICE
    51.
    发明申请
    IMAGE PROCESSING DEVICE AND IMAGE FORMING DEVICE 有权
    图像处理装置和图像形成装置

    公开(公告)号：US20090237756A1

    公开(公告)日：2009-09-24

    申请号：US12392717

    申请日：2009-02-25

    申请人： Kazuhiko HIROKAWA ,  Makoto Furuki ,  Kazunori Anazawa ,  Tomoko Miyahara ,  Minquan Tian ,  Shinji Hasegawa ,  Takashi Matsubara ,  Yuka Ito ,  Miho Watanabe

    发明人： Kazuhiko HIROKAWA ,  Makoto Furuki ,  Kazunori Anazawa ,  Tomoko Miyahara ,  Minquan Tian ,  Shinji Hasegawa ,  Takashi Matsubara ,  Yuka Ito ,  Miho Watanabe

    IPC分类号： G03F3/08

    CPC分类号： H04N1/46

    摘要： An image processing device provided with an acquiring unit and a generating unit. The acquiring unit acquires invisible image data of an invisible image subject to forming on a recording medium with invisible coloring material and acquires source image data of a source image subject to forming on the recording medium with visible coloring material. The generating unit generates corrected-image-data of the source image data corrected according to the absorption wavelength characteristics of the invisible coloring material, such that the color of overlapping regions where both the invisible image and the source image are superimposed when formed on the recording medium approximates to the color of regions corresponding to the overlapping regions in the source image.

    摘要翻译： 一种具有获取单元和生成单元的图像处理装置。 获取单元获取在具有不可见着色材料的记录介质上形成的不可见图像的不可见图像数据，并且用可见的着色材料获取在记录介质上形成的源图像的源图像数据。 生成单元生成根据不可见着色材料的吸收波长特性校正的源图像数据的校正图像数据，使得当在记录上形成时将不可见图像和源图像叠加在一起的重叠区域的颜色 介质近似于源图像中与重叠区域相对应的区域的颜色。

    Semiconductor device
    56.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08816410B2

    公开(公告)日：2014-08-26

    申请号：US13357381

    申请日：2012-01-24

    申请人： Wataru Saito ,  Syotaro Ono ,  Toshiyuki Naka ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    发明人： Wataru Saito ,  Syotaro Ono ,  Toshiyuki Naka ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    IPC分类号： H01L29/772

    CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7395

    摘要： A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

    摘要翻译： 实施例的第一半导体器件包括第一导电类型的第一半导体层，第一控制电极，引出电极，第二控制电极和第三控制电极。 第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层，第二导电类型的第三半导体层和第一导电类型的第四半导体层。 第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极，并且与提取电极下方的第二半导体层相对。 第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。 第二控制电极的电阻高于第三控制电极的电阻。

    Power semiconductor device
    57.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US08592893B2

    公开(公告)日：2013-11-26

    申请号：US13052893

    申请日：2011-03-21

    申请人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Shunji Taniuchi ,  Miho Watanabe

    发明人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Shunji Taniuchi ,  Miho Watanabe

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/408 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66734 ,  H01L29/7811

    摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type, a fourth semiconductor layer, a fifth semiconductor layer, a first and second main electrode, a first and second insulating film and a control electrode. The second and third layers are provided periodically on the first layer. The fourth layer is provided on the third layer. The fifth layer is selectively provided on the fourth layer. The first film is provided on sidewalls of a trench that reaches from a surface of the fifth layer to the second layer. The second film is provided closer to a bottom side of the trench than the first film and has a higher permittivity than the first film. The control electrode is embedded in the trench.

    摘要翻译： 根据一个实施例，功率半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层和第二导电类型的第三半导体层，第四半导体层，第五半导体层， 第一和第二主电极，第一和第二绝缘膜和控制电极。 第二层和第三层周期性地设置在第一层上。 第四层设置在第三层上。 第五层选择性地设置在第四层上。 第一膜设置在从第五层的表面到第二层的沟槽的侧壁上。 第二膜比第一膜更靠近沟槽的底侧，并且具有比第一膜更高的介电常数。 控制电极嵌入沟槽中。

    LIGHT-EMITTING CIRCUIT AND LUMINAIRE
    58.
    发明申请
    LIGHT-EMITTING CIRCUIT AND LUMINAIRE 审中-公开
    发光电路和发光二极管

    公开(公告)号：US20130077302A1

    公开(公告)日：2013-03-28

    申请号：US13593963

    申请日：2012-08-24

    申请人： Miho Watanabe ,  Nobuhiko Betsuda

    发明人： Miho Watanabe ,  Nobuhiko Betsuda

    IPC分类号： F21V13/02 ,  F21V31/00

    CPC分类号： H01L33/58 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/00014

    摘要： According to one embodiment, a light-emitting circuit includes a substrate, a conductive section formed on the substrate, a plurality of light-emitting elements electrically connected to the conductive section and mounted on the substrate, a sealing member including phosphors provided to cover the light-emitting elements, and a diffusion layer provided to cover the sealing member such that light emitted from the sealing member is made incident on the diffusion layer, the diffusion layer including a plurality of columnar sections perpendicular to the front surface side of the sealing member.

    摘要翻译： 根据一个实施例，发光电路包括基板，形成在基板上的导电部分，与导电部分电连接并安装在基板上的多个发光元件，包括设置成覆盖该基板的荧光体的密封部件 发光元件和设置成覆盖密封构件的扩散层，使得从密封构件发射的光入射到扩散层上，扩散层包括垂直于密封构件的前表面侧的多个柱状部分 。

    SEMICONDUCTOR DEVICE
    59.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120012929A1

    公开(公告)日：2012-01-19

    申请号：US13051987

    申请日：2011-03-18

    申请人： Wataru SAITO ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    发明人： Wataru SAITO ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42372 ,  H01L29/66734

    摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层， 第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。 第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。 第四半导体层设置在第二半导体层和第三半导体层上。 第五半导体层选择性地设置在第四半导体层的表面上。 控制电极通过绝缘膜设置在沟槽中。 沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。 第一主电极连接到第一半导体层。 第二主电极连接到第四半导体层和第五半导体层。 第六半导体层设置在第四半导体层和第二半导体层之间。 第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

    Method of producing a nucleic acid encoding an antibody
    60.
    发明授权
    Method of producing a nucleic acid encoding an antibody 失效
    生产编码抗体的核酸的方法

    公开(公告)号：US08008076B2

    公开(公告)日：2011-08-30

    申请号：US11587701

    申请日：2005-04-27

    申请人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

    发明人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

    IPC分类号： C12N15/63 ,  C12N5/06 ,  C12N1/20 ,  C07H21/04

    CPC分类号： A01K67/027 ,  A01K2267/01 ,  A61K35/16 ,  C07K16/00 ,  C07K16/30

    摘要： An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells.The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.

    摘要翻译： 本发明的目的是便于获得渗透病毒感染细胞的抗体产生细胞，癌细胞，形成良性增生的异常细胞等，以及提高抗体生产的效率 作为从抗体产生细胞编码它们的核酸。 本发明人发现，当将包含浸润性淋巴细胞的癌组织移植到不具有T细胞，B细胞和NK细胞的高度免疫缺陷的动物中并且进一步表现出低的IFN产生能力时，意外地促进了浸润性淋巴细胞的分化和增殖 并且产生识别癌组织的抗体的浆细胞的数量急剧增加，可以容易地分离浆细胞，并且可以容易地从浆细胞制备抗体或编码它们的核酸。