公开(公告)号：US06613471B2

公开(公告)日：2003-09-02

申请号：US09999393

申请日：2001-10-31

申请人： Stanford R. Ovshinsky ,  Boyko Aladjov ,  Srinivasan Venkatesan ,  Thomas Hopper ,  Kevin Fok ,  Subhash Dhar

发明人： Stanford R. Ovshinsky ,  Boyko Aladjov ,  Srinivasan Venkatesan ,  Thomas Hopper ,  Kevin Fok ,  Subhash Dhar

IPC分类号： H01M486

CPC分类号： C01B3/0031 ,  C01B13/02 ,  H01M4/383 ,  H01M4/86 ,  H01M4/8615 ,  H01M8/065 ,  H01M8/08 ,  H01M8/186 ,  H01M12/08 ,  H01M2004/8684 ,  H01M2004/8689 ,  Y02E60/128 ,  Y02E60/327

摘要： A hydrogen storage alloy active material for the anode of Ovonic instant startup/regenerative fuel cells. The active material includes a hydrogen storage alloy material with a water reactive chemical hydride additive, which, upon utilization of the active material in an anode of an alkaline electrolyte fuel cell, gives the anode added benefits, not attainable by using hydrogen storage alloy material alone. These added benefits include 1) precharge of the hydrogen storage material with hydrogen; 2) higher porosity/increased surface area/reduced electrode polarization at high currents; 3) simplified, faster activation of the hydrogen storage alloy; and 4) optionally, enhanced corrosion protection for the hydrogen storage alloy.

公开(公告)号：US06503659B1

公开(公告)日：2003-01-07

申请号：US09352255

申请日：1999-07-13

申请人： Stanford R. Ovshinsky ,  Srinivasan Venkatesan ,  Boyko Aladjov ,  Kevin Fok ,  Thomas J. Hopper ,  Lynn Taylor

发明人： Stanford R. Ovshinsky ,  Srinivasan Venkatesan ,  Boyko Aladjov ,  Kevin Fok ,  Thomas J. Hopper ,  Lynn Taylor

IPC分类号： H01M458

CPC分类号： H01M4/242 ,  H01M10/345

摘要： A layered hydrogen absorbing alloy electrode for an alkaline electrochemical cell. The layered electrode comprises a outer layer comprising a metal oxide, metal sulfide or mixtures thereof. The outer layer reduces the internal pressure of electrochemical cell.

摘要翻译： 一种用于碱性电化学电池的层状吸氢合金电极。 层状电极包括包含金属氧化物，金属硫化物或其混合物的外层。 外层降低了电化学电池的内部压力。

公开(公告)号：US6017655A

公开(公告)日：2000-01-25

申请号：US136129

申请日：1998-08-18

申请人： Stanford R. Ovshinsky ,  Srinivasan Venkatesan ,  Boyko Aladjov ,  Subhash Dhar ,  Rosa Young

发明人： Stanford R. Ovshinsky ,  Srinivasan Venkatesan ,  Boyko Aladjov ,  Subhash Dhar ,  Rosa Young

IPC分类号： H01M10/30 ,  H01M4/32 ,  H01M4/62 ,  H01M10/34

CPC分类号： H01M4/32 ,  H01M4/62 ,  H01M10/30 ,  H01M10/345

摘要： A positive electrode active material mixture comprising: a nickel hydroxide material, and an additive material comprising at least one element selected from the group consisting of calcium cobalt oxide, calcium titanium oxide, calcium molybdenum oxide, lithium cobalt oxide, and mixtures thereof. A nickel positive electrode comprising this active material mixture. A nickel-based, alkaline electrochemical cell comprising this positive electrode.

摘要翻译： 一种正极活性物质混合物，包括：氢氧化镍材料和包含至少一种选自由钴，氧化钙，氧化钙，氧化钴，及其混合物组成的组中的元素的添加剂材料。 包含该活性物质混合物的镍正极。 包含该正极的镍基碱性电化学电池。

公开(公告)号：US5180690A

公开(公告)日：1993-01-19

申请号：US551684

申请日：1990-07-09

申请人： Wolodymyr Czubatyj ,  Stanford R. Ovshinsky ,  Guy C. Wicker ,  David Beglau ,  Ronald Himmler ,  David Jablonski ,  Subhendu Guha

发明人： Wolodymyr Czubatyj ,  Stanford R. Ovshinsky ,  Guy C. Wicker ,  David Beglau ,  Ronald Himmler ,  David Jablonski ,  Subhendu Guha

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/458 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S148/122

摘要： A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.

摘要翻译： 掺杂多晶半导体合金材料的低温制造方法。 该方法包括以下步骤：将半导体合金材料体暴露于至少含有掺杂剂元素的源的反应气体，并且在分解反应气体的同时建立足以溅射蚀刻所述层的表面的电势。 这允许在半导体合金材料体上沉积掺杂的非晶半导体合金材料层。 此后，非晶半导体合金材料的掺杂层暴露于足以至少部分地使所述非晶材料结晶的退火环境，并激活掺杂剂元素。

公开(公告)号：US20130037755A1

公开(公告)日：2013-02-14

申请号：US13620930

申请日：2012-09-15

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： H01B1/04

CPC分类号： H01L31/20 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3326 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/035218 ,  H01L31/03767 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

公开(公告)号：US20120040518A1

公开(公告)日：2012-02-16

申请号：US13284912

申请日：2011-10-30

申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

IPC分类号： H01L21/20

CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

公开(公告)号：US08111546B2

公开(公告)日：2012-02-07

申请号：US12269901

申请日：2008-11-13

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： G11C11/00

CPC分类号： H01L45/085 ,  H01L45/1213 ,  H01L45/141 ,  Y10S977/754

摘要： A method and device for accomplishing transformation of a switching material from a resistive state to a conductive state. The method utilizes a non-electrical source of energy to effect the switching transformation. The switching material may be a chalcogenide switching material, where the non-electrical source of energy initiates switching by liberating lone pair electrons from bound states of chalcogen atoms. The liberated lone pair electrons form a conductive filament having the characteristics of a solid state plasma to permit high current densities to pass through the switching material. The device includes a switching material with electrical contacts and may be interconnected with other elements in a circuit to regulate electrical communication therebetween.

摘要翻译： 一种用于实现将开关材料从电阻状态转换为导通状态的方法和装置。 该方法利用非电源能量来实现开关变换。 开关材料可以是硫族化物开关材料，其中非电源能量通过从孤硫原子的结合态释放孤对电子而开始切换。 释放的孤对电子形成具有固态等离子体特性的导电丝，以允许高电流密度通过开关材料。 该装置包括具有电触点的开关材料，并且可以与电路中的其它元件互连以调节它们之间的电连通。

公开(公告)号：US08062920B2

公开(公告)日：2011-11-22

申请号：US12508835

申请日：2009-07-24

申请人： Stanford R. Ovshinsky

发明人： Stanford R. Ovshinsky

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  Y02E10/50

摘要： A photovoltaic device including a current collection element and a method of making same. The photovoltaic device includes a substrate, a conductive layer, an active photovoltaic material, a transparent electrode and a current collection element. The current collection element includes a transparent support and one or more conductive wires integrated therewith. The conductive wires are in electrical communication with the transparent electrode. Current generated by the active photovoltaic material passes to the transparent electrode. The current collection element facilitates delivery of current passing through the transparent electrode to leads that deliver the current to an external load. The method includes placing a pre-fabricated current collection element in direct contact with the transparent electrode of the photovoltaic device. The time and expense of assembling the conductive wires during fabrication of the photovoltaic device is thereby avoided and higher manufacturing speeds are achieved.

摘要翻译： 一种包括电流收集元件的光电器件及其制造方法。 光伏器件包括衬底，导电层，活性光伏材料，透明电极和集电元件。 电流收集元件包括透明支撑件和与其集成的一个或多个导电线。 导线与透明电极电连通。 由活性光伏材料产生的电流传递到透明电极。 电流采集元件有助于将通过透明电极的电流传送到将电流传递到外部负载的引线。 该方法包括将预制的电流收集元件放置成与光伏器件的透明电极直接接触。 从而避免了在制造光伏器件期间组装导线的时间和费用，并且实现了更高的制造速度。

公开(公告)号：US08048782B1

公开(公告)日：2011-11-01

申请号：US12855631

申请日：2010-08-12

申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

IPC分类号： H01L21/00

CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

公开(公告)号：US07858152B2

公开(公告)日：2010-12-28

申请号：US12284425

申请日：2008-09-22

申请人： Stanford R. Ovshinsky ,  Smuruthi Kamepalli

发明人： Stanford R. Ovshinsky ,  Smuruthi Kamepalli

IPC分类号： C23C16/00

CPC分类号： C23C16/305 ,  H01L45/04 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

摘要： A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

摘要翻译： 用于制备电和光硫族化物材料的化学气相沉积（CVD）工艺。 在优选的实施方案中，瞬时CVD沉积的材料表现出一种或多种以下性质：电开关，积聚，凝固，可逆多态行为，复位，认知功能和可逆非晶晶转换。 在一个实施方案中，包括含有硫属元素的至少一层的多层结构通过CVD沉积，并进行后沉积施加能量以产生具有根据本发明的性质的硫族化物材料。 在另一个实施方案中，具有根据本发明的性质的单层硫族化物材料由包括三种或更多种沉积前体的CVD沉积工艺形成，其中至少一种是硫属元素前体。 优选的材料是含有硫族元素Te和Ge和/或Sb的材料。