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51.发明授权Optical information reproduction apparatus having a semiconductor laser device light source 失效具有半导体激光装置光源的光信息再生装置
公开(公告)号：US5909425A
公开(公告)日：1999-06-01
申请号：US844278
申请日：1997-04-18
CPC分类号： G11B7/127 , H01S5/0658
摘要： An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.
摘要翻译： 光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。 半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系：TP <（4L / C）和T> TP +（2L / C），其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度，其被定义为各个脉冲波的一部分的宽度，该部分的强度对应于各个脉冲波的峰值强度的10％以上; C是通过空气的光速。
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公开(公告)号：US5280493A
公开(公告)日：1994-01-18
申请号：US859587
申请日：1992-03-27
CPC分类号： B82Y20/00 , H01S5/341 , H01S5/1228 , H01S5/2059 , H01S5/2238 , H01S5/2272 , H01S5/343
摘要： A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
摘要翻译： 量子线激光器包括形成在衬底上并包括被阻挡层夹在中间的至少一个第一量子阱层的第一多层结构，第二多层结构形成在第一多层结构的层叠横截面上 通过连续地层叠具有比第一量子阱层的带隙大的带隙的第一势垒层，具有与第一量子阱层的带隙几乎相等的带隙的第二量子阱层而获得的第二势垒层， 阻挡层的带隙大于第一和第二量子阱层的阻挡层，其中用于限制电子的区域设置在第一量子阱层和第二量子阱层附近的至少一个区域中。
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公开(公告)号：US4890293A
公开(公告)日：1989-12-26
申请号：US255049
申请日：1988-10-07
申请人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4031
摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.
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公开(公告)号：US4870651A
公开(公告)日：1989-09-26
申请号：US127836
申请日：1987-12-02
CPC分类号： H01S5/14 , H01S5/4062
摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.
摘要翻译： 一种半导体发光装置，包括具有多个激光灯丝的半导体激光器阵列器件和具有带状光波导的模式混合器件，其与半导体激光器阵列器件实现光学相位耦合，由此来自半导体激光器阵列的光束 器件经由模拟混合器件从半导体发光装置的发光面发射，从而获得具有最小纹波率的近场图案对光强度的影响。
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公开(公告)号：US4799225A
公开(公告)日：1989-01-17
申请号：US104865
申请日：1987-10-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising a first array portion which is composed of a plurality of parallel waveguides; a second array portion which is composed of a plurality of parallel waveguides; a third array portion which is composed of a plurality of symmetrically branching waveguides that optically connect the ends of the parallel waveguides of the first array portion; and a fourth array portion which is composed of a plurality of symmetrically branching waveguides that are optically connected to the other ends of the parallel waveguides of the second array portion, the ends of said symmetrically branching waveguides of the fourth array portion meeting one laser-emitting face of said laser array device at which said symmetrically branching waveguides begin to be optically combined with the adjacent symmetrically branching waveguides.
摘要翻译： 一种具有波导结构的半导体激光阵列器件，包括由多个平行波导构成的第一阵列部分; 由多个平行波导构成的第二阵列部分; 第三阵列部分，其由多个对称分支波导构成，所述多个对称分支波导光学连接所述第一阵列部分的平行波导的端部; 以及第四阵列部分，其由多个对称分支波导组成，所述多个对称分支波导光学连接到所述第二阵列部分的平行波导的另一端，所述第四阵列部分的所述对称分支波导的端部满足一个激光发射 所述激光阵列器件的所述对称分支波导开始与相邻对称分支波导光学组合的面。
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公开(公告)号：US4772082A
公开(公告)日：1988-09-20
申请号：US876223
申请日：1986-06-19
CPC分类号： H01S5/028 , H01S5/4068
摘要： A semiconductor laser array device comprising a plurality of index-guided active waveguides optically and smoothly coupled with each other in a parallel manner, wherein the reflective index of the center area of at least one facet of said semiconductor laser array device corresponding to said active waveguides is higher than that of the other area of said facet corresponding to said active waveguides.
摘要翻译： 一种半导体激光器阵列器件，包括以平行方式彼此光学和平滑地耦合的多个折射率导向的有源波导，其中所述半导体激光器阵列器件的至少一个刻面的对应于所述有源波导的中心区域的反射率 高于对应于所述有源波导的所述面的其他区域的面积。
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57.发明授权
公开(公告)号：US4752932A
公开(公告)日：1988-06-21
申请号：US791122
申请日：1985-10-24
CPC分类号： H01S5/2232 , H01S5/4068
摘要： A semiconductor laser device uses an optical waveguide which is in a single mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form two branch waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser light and which are parallel to each other near the facets, thereby attaining a 0.degree.-phase shift between light waves propagated in the two branch waveguides and resulting in laser lights with a 0.degree.-phase shift therebetween.
摘要翻译： 半导体激光器件使用在其中心部分处于单一模式的光波导，并且在其两端部分别处于分支模式，以形成相对于激光器的波导方向对称定位的两个分支波导 光，并且在小平面附近彼此平行，从而在两个分支波导中传播的光波之间获得0°相移，并产生其间具有0°相移的激光。
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公开(公告)号：US4747109A
公开(公告)日：1988-05-24
申请号：US881096
申请日：1986-07-02
CPC分类号： H01S5/10 , H01S5/4031
摘要： The laser device has a plurality of parallel index-waveguides. The intermediate regions of the waveguides are at an angle of inclination from a line perpendicular to each of both facets of the laser device. The ends of the waveguides are oriented orthogonally to the facets of the laser device.
摘要翻译： 激光装置具有多个平行的折射率波导。 波导的中间区域与垂直于激光装置的两个面的每个面的线倾斜成一定角度。 波导的端部与激光器件的刻面正交定向。
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公开(公告)号：US4716129A
公开(公告)日：1987-12-29
申请号：US816569
申请日：1986-01-06
IPC分类号： H01L21/208 , H01L27/15 , H01L33/14 , H01L33/30 , H01S5/00
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576
摘要： A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer having a polarity different from that of the first layer is grown, wherein a non-Te-doped third layer having the same polarity as the first layer is grown between the first layer and the second layer. Another method in which on a Te-doped first layer, a second layer having a principal crystal composition different from that of the first layer is grown, wherein a non-Te-doped third layer having the same principal crystal composition of the first layer is grown between the first layer and the second layer.
摘要翻译： 使用周期表第III至V族的半导体的液相外延生产半导体器件的方法，其中在Te掺杂的第一层上生长具有与第一层的极性不同的第二层的半导体器件的生长方法 其中在所述第一层和所述第二层之间生长具有与所述第一层相同极性的非Te掺杂的第三层。 在Te掺杂的第一层上生长具有不同于第一层的主晶体组成的第二层的另一种方法，其中具有与第一层相同的主晶体组成的非Te掺杂的第三层为 生长在第一层和第二层之间。
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公开(公告)号：US4679200A
公开(公告)日：1987-07-07
申请号：US691917
申请日：1985-01-16
CPC分类号： H01S5/10 , H01S5/2232 , H01S2301/18 , H01S2301/185 , H01S5/2234
摘要： A semiconductor laser includes a current blocking layer formed on a substrate, a first cladding layer formed on the current blocking layer, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer. An indent is formed in the current blocking layer near the center of the laser element, and a V-shaped groove is formed in the current blocking layer across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured without the influence of the return beam reflected from the disc surface, and the attendant mode competition noise is reduced.
摘要翻译： 半导体激光器包括形成在基板上的电流阻挡层，形成在电流阻挡层上的第一覆盖层，形成在第一覆盖层上的有源层和形成在有源层上的第二覆层。 在激光元件的中心附近的电流阻挡层中形成凹口，并且在电流阻挡层中形成跨越凹口的V形槽。 在形成凹口的地方形成增益引导结构，并且在切割面附近形成引导引导结构。 确保稳定的横模式激光发射，而不受来自盘表面反射的返回光束的影响，并且伴随模式的竞争噪声降低。
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