Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures
    51.
    发明授权
    Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures 失效
    具有反应性基团的骨架的聚合物用作交联作为纳米多孔薄膜结构的前体

    公开(公告)号:US06313185B1

    公开(公告)日:2001-11-06

    申请号:US09538276

    申请日:1998-09-24

    IPC分类号: C08J902

    摘要: Nanoporous materials are fabricated from polymers having backbones with reactive groups used in crosslinking. In one aspect of preferred methods and compositions, the reactive groups in the backbone comprise a diene and a dienophile. The diene may advantageously comprise a tetracyclone, and the dienophile may advantageously comprise an ethynyl. In another aspect of preferred methods and compositions, the reactive groups in the backbone are included in a conjugated system. Especially preferred polymeric strands comprise a poly(arylene ether) synthesized from a difluoroaromatic portion and an aromatic bisphenolic portion. It is still more preferred that the difluoroaromatic portions of the poly(arylene ether) are modified in such a way that some difluoroaromatic portions carry a thermolabile portion. In still other aspects crosslinking may advantageously occur without reliance on an exogenous crosslinker.

    摘要翻译: 纳米多孔材料由具有用于交联的反应性基团的主链的聚合物制成。 在优选的方法和组合物的一个方面,主链中的反应性基团包含二烯和亲二烯体。 二烯可有利地包含四环,并且亲二烯体可有利地包含乙炔基。 在优选方法和组合物的另一方面,骨架中的反应性基团包括在共轭体系中。 特别优选的聚合物链包含由二氟芳族部分和芳族双酚部分合成的聚(亚芳基醚)。 更优选的是,聚(亚芳基醚)的二氟芳香族部分以使得一些二氟芳香族部分携带不可热热部分的方式被改性。 在其它方面,交联可有利地发生,而不依赖于外源交联剂。

    Oxidizing polishing slurries for low dielectric constant materials
    52.
    发明授权
    Oxidizing polishing slurries for low dielectric constant materials 失效
    氧化低介电常数材料的抛光浆料

    公开(公告)号:US06270395B1

    公开(公告)日:2001-08-07

    申请号:US09160514

    申请日:1998-09-24

    IPC分类号: B24G100

    摘要: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

    摘要翻译: 用于去除低介电常数材料的氧化浆料。 使用具有单独氧化剂的非氧化性颗粒,单独氧化颗粒或用可相容的氧化剂可还原的磨料颗粒形成浆料。 颗粒可以由金属氧化物,氮化物或碳化物材料本身或其混合物形成,或者可以涂覆在诸如二氧化硅的芯材料上,或者可以与其共形。 优选的氧化浆料是粒径分布的多模态。 虽然开发用于CMP半导体处理中的本发明的氧化浆料也可用于其它高精度抛光工艺。