-
公开(公告)号：US08227809B2
公开(公告)日：2012-07-24
申请号：US10678299
申请日：2003-10-06
IPC分类号： H01L29/04 , H01L31/0376 , H01L27/12
CPC分类号： H01L33/08 , H01L27/1218 , H01L27/1255 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78696 , H01L51/5237 , H01L51/524 , H01L51/5246 , H01L51/5259 , H01L51/529 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide an EL display device having a high operation performance and reliability.The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.
摘要翻译： 本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。 在像素内形成的开关TFT201具有多栅极结构，这是对减小OFF电流值有重要意义的结构。 此外，电流控制TFT202具有比开关TFT宽的沟道宽度，以形成适于流动电流的结构。 另外，电流控制TFT202的LDD区域33形成为与栅电极35的一部分重叠，形成对防止热载流子注入和关断电流值的重要性的结构。
-
公开(公告)号：US20120061718A1
公开(公告)日：2012-03-15
申请号：US13230137
申请日：2011-09-12
IPC分类号： H01L33/52
CPC分类号： G09G3/3233 , G09G3/30 , G09G3/3275 , G09G2300/0426 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2310/061 , G09G2320/0233 , H01L27/1203 , H01L27/3244 , H01L27/3262 , H01L29/66772 , H01L29/78621 , H01L2251/566
摘要： There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the electric current controlling FET (202). The fluctuation in characteristics of the electric current controlling FET (202) is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (202), the electronic device having high reliability can be obtained.
摘要翻译： 提供了具有高可靠性和高色彩再现性的电子设备。 进行像素结构，使得开关FET（201）和电流控制用FET（202）形成在单晶半导体基板（11）上，并且将EL元件（203）电连接到电流控制FET （202）。 电流控制FET（202）的特性波动在像素中非常低，并且可以获得具有高色彩再现性的图像。 通过在电流控制用FET（202）中采取热载体测量，可以获得具有高可靠性的电子设备。
-
公开(公告)号：US08035773B2
公开(公告)日：2011-10-11
申请号：US11542215
申请日：2006-10-04
IPC分类号： G02F1/1334 , G02F1/1362
CPC分类号： G02F1/1334 , G02F1/13624 , G02F1/141
摘要： A liquid crystal electro-optical device comprises a pair of substrates, at least one of them being light-transmitting, electrodes provided on said substrates, an electro-optical modulating layer being sandwiched by said pair of substrates, and a black coating formed between the electro-optical modulating layer and one of the substrates. The electro-optical modulating layer comprises a dichroic dye and a liquid crystal material embedded in a transparent material which is cured except in a portion situated under the black coating.
摘要翻译： 液晶电光装置包括一对基板，其中至少一个是透光的，设置在所述基板上的电极，由所述一对基板夹持的电光转换层，以及形成在所述基板之间的黑色涂层 电光调制层和其中一个基板。 电光调制层包括二色性染料和嵌入透明材料中的液晶材料，除了位于黑色涂层之下的部分外，该调色剂被固化。
-
公开(公告)号：US08017945B2
公开(公告)日：2011-09-13
申请号：US11867341
申请日：2007-10-04
CPC分类号： G09G3/3233 , G09G3/30 , G09G3/3275 , G09G2300/0426 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2310/061 , G09G2320/0233 , H01L27/1203 , H01L27/3244 , H01L27/3262 , H01L29/66772 , H01L29/78621 , H01L2251/566
摘要： There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the electric current controlling PET (202). The fluctuation in characteristics of the electric current controlling FET (202) is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (202), the electronic device having high reliability can be obtained.
摘要翻译： 提供了具有高可靠性和高色彩再现性的电子设备。 进行像素结构，使得开关FET（201）和电流控制用FET（202）形成在单晶半导体基板（11）上，并且将EL元件（203）电连接到电流控制FET （202）。 电流控制FET（202）的特性波动在像素中非常低，并且可以获得具有高色彩再现性的图像。 通过在电流控制用FET（202）中采取热载体测量，可以获得具有高可靠性的电子设备。
-
55.发明授权Method for manufacturing an electro-optical device or electroluminescence display device 有权电光装置或电致发光显示装置的制造方法公开(公告)号：US07880167B2
公开(公告)日：2011-02-01
申请号：US11085077
申请日：2005-03-22
CPC分类号： H01L51/52 , H01L27/12 , H01L27/1214 , H01L27/3211 , H01L27/3244 , H01L27/3258 , H01L51/0005 , H01L51/0038 , H01L51/0042 , H01L51/0059 , H01L51/0062 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0085 , H01L51/0087 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/529
摘要： An object of the present invention is to provide an EL display device having high operation performance and reliability.A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
摘要翻译： 本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。 第三钝化膜45设置在包括像素电极（阳极）46，EL层47和阴极48的EL元件203的下方，并且防止了碱金属从通过喷墨法形成的EL元件203扩散到TFT中。 此外，第三钝化膜45防止水分和氧从TFT渗透，并且通过分散由EL元件203产生的热量来抑制EL元件203的劣化。
-
公开(公告)号：US07741775B2
公开(公告)日：2010-06-22
申请号：US11407145
申请日：2006-04-20
IPC分类号： H01L29/04
CPC分类号： H01L33/08 , H01L27/1218 , H01L27/1255 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78696 , H01L51/5237 , H01L51/524 , H01L51/5246 , H01L51/5259 , H01L51/529 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide an EL display device having a high operation performance and reliability.The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.
摘要翻译： 本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。 在像素内形成的开关TFT201具有多栅极结构，这是对减小OFF电流值有重要意义的结构。 此外，电流控制TFT202具有比开关TFT宽的沟道宽度，以形成适于流动电流的结构。 另外，电流控制TFT202的LDD区域33形成为与栅电极35的一部分重叠，形成对防止热载流子注入和关断电流值的重要性的结构。
-
公开(公告)号：US07569856B2
公开(公告)日：2009-08-04
申请号：US11078440
申请日：2005-03-14
申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
发明人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L29/786 , H01L21/336 , H01L21/84
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。
-
公开(公告)号：US07518146B2
公开(公告)日：2009-04-14
申请号：US11070121
申请日：2005-03-01
IPC分类号： H01L29/04
CPC分类号： H01L27/3262 , H01L27/1218 , H01L27/124 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3272 , H01L27/3276 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the position corresponding to periphery of each pixel (102), while a color filter (113) is disposed at the position corresponding to each of the pixels (102). This light shielding film makes the contour of the pixels clear, resulting in an image display with high definition. In addition, it is possible to fabricate the EL display device of the present invention with most of an existing manufacturing line for liquid crystal display devices. Thus, an amount of equipment investment can be significantly reduced, thereby resulting in a reduction in the total manufacturing cost.
摘要翻译： 多个像素（102）被布置在基板上。 每个像素（102）设置有EL元件，其利用连接到电流控制TFT（104）的像素电极（105）作为阴极。 在对置基板（110）上，在与各像素（102）的周围对应的位置设置遮光膜（112），同时在与每个像素（102）对应的位置设置滤色器（113） ）。 该遮光膜使像素的轮廓清晰，导致高分辨率的图像显示。 此外，可以利用大部分现有的液晶显示装置制造线来制造本发明的EL显示装置。 因此，可以显着减少设备投资的量，从而导致总制造成本的降低。
-
公开(公告)号：US07462501B2
公开(公告)日：2008-12-09
申请号：US11078521
申请日：2005-03-14
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , H01L27/12 , H01L27/1214 , H01L27/3211 , H01L27/3244 , H01L27/3258 , H01L51/0005 , H01L51/0038 , H01L51/0042 , H01L51/0059 , H01L51/0062 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0085 , H01L51/0087 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/529
摘要： An object of the present invention is to provide an EL display device having high operation performance and reliability.A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
摘要翻译： 本发明的目的是提供一种具有高操作性能和可靠性的EL显示装置。 第三钝化膜45设置在包括像素电极（阳极）46，EL层47和阴极48的EL元件203的下方，并且防止了碱金属从通过喷墨法形成的EL元件203扩散到TFT中。 此外，第三钝化膜45防止水分和氧从TFT渗透，并且通过分散由EL元件203产生的热量来抑制EL元件203的劣化。
-
公开(公告)号：US20070138473A1
公开(公告)日：2007-06-21
申请号：US11647179
申请日：2006-12-29
申请人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
发明人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.
-
-
-
-
-
-
-
-
-
搜索结果
240 条记录 (耗时 0.044 秒)