Magnetic sheet with stripe-arranged magnetic grains, RFID magnetic sheet, magnetic shielding sheet and method of manufacturing the same
    54.
    发明授权
    Magnetic sheet with stripe-arranged magnetic grains, RFID magnetic sheet, magnetic shielding sheet and method of manufacturing the same 有权
    具有带状磁性颗粒的磁性片,RFID磁性片,磁屏蔽片及其制造方法

    公开(公告)号:US07981528B2

    公开(公告)日:2011-07-19

    申请号:US11848407

    申请日:2007-08-31

    IPC分类号: B32B15/00

    摘要: A water-repelling layer is formed on a resin film, and a stripe pattern region is formed so as to be positioned within a surface region of the water-repelling layer and so as to be relatively hydrophilic with respect to water repellency of the water-repelling layer. A magnetic stripe pattern is formed of needle-shaped magnetic grains oriented and aggregated in the stripe pattern region. The needle-shaped magnetic grains are arranged in a desirable state in a predetermined stripe pattern, with a high magnetic permeability and a magnetic sheet with stripe-arranged magnetic grains that is thin and flexible is obtained.

    摘要翻译: 在树脂膜上形成防水层,并且形成条纹图案区域,以便位于防水层的表面区域内,并且相对于水溶性防水层的防水性而相对亲水, 排斥层。 磁条图案由在条纹图案区域中定向和聚集的针状磁性颗粒形成。 针状磁性颗粒以预定的条纹图案被布置成期望的状态,具有高磁导率,并且获得薄且柔性的带状排列的磁性颗粒的磁性片。

    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE
    57.
    发明申请
    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE 有权
    柔性半导体器件的制造方法

    公开(公告)号:US20110121298A1

    公开(公告)日:2011-05-26

    申请号:US13054049

    申请日:2010-02-05

    IPC分类号: H01L29/786 H01L21/336

    摘要: A method includes the steps of preparing a multilayer film 80 formed by sequentially stacking a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40; forming a source electrode 42s and a drain electrode 42d comprised of the second metal layer 40 by etching the second metal layer 40; pressure-bonding a resin layer 50 onto a surface of the multilayer film 80 provided with the source electrode 42s and the drain electrode 42d to burry the source electrode 42s and the drain electrode 42d in the resin layer 50; and forming a gate electrode 10g comprised of the first metal layer 10 by etching the first metal layer 10. The inorganic insulating layer 20g functions as a gate insulating film. The semiconductor layer 30 functions as a channel.

    摘要翻译: 一种方法包括制备通过顺序堆叠第一金属层10,无机绝缘层20,半导体层30和第二金属层40而形成的多层膜80的步骤; 通过蚀刻第二金属层40形成由第二金属层40构成的源电极42s和漏电极42d; 将树脂层50压接到设置有源电极42s和漏电极42d的多层膜80的表面,以将树脂层50中的源电极42s和漏电极42d嵌入; 以及通过蚀刻第一金属层10形成由第一金属层10构成的栅极电极10g。无机绝缘层20g用作栅极绝缘膜。 半导体层30用作沟道。