Manufacturing method for a TFT array substrate and TFT array substrate

    公开(公告)号:US10971530B2

    公开(公告)日:2021-04-06

    申请号:US16097279

    申请日:2018-09-18

    Abstract: A manufacturing method for TFT array substrate and TFT array substrate are disclosed. After depositing an electrode material layer and a metal material layer on the gate insulation layer and the active layer in sequence after the active layer above the gate electrode is formed. A photoresist pattern is formed on the metal material layer. The photoresist pattern includes a first and second photoresist blocks with different thicknesses. The metal material layer and the electrode material layer are etched using the photoresist pattern to form a contact electrode and pixel electrodes connected with two ends of the active layer and the source/drain electrodes on the contact electrode. The process is simple and can effectively reduce the contact resistance between the source/drain and the active layer and improve the quality of the product.

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