公开(公告)号：US07592803B1

公开(公告)日：2009-09-22

申请号：US12214865

申请日：2008-06-23

申请人： Yimin Guo ,  Grace Gorman

发明人： Yimin Guo ,  Grace Gorman

IPC分类号： G01B7/30 ,  G01R33/05 ,  G01R33/09

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/096

摘要： An AMR gear tooth rotation sensor and a method for utilizing it are disclosed. These facilitate easy manufacture of the device without sacrificing either high sensitivity or high signal output. This is achieved by forming individual sensing elements out of AMR stripes and then connecting four such sensing elements as a Wheatstone bridge. The latter is attached to a permanent magnet that provides a bias field whose value rises and falls as wheel teeth and valleys (respectively) move past the rotation sensor.

摘要翻译： 公开了一种AMR齿轮齿旋转传感器及其利用方法。 这些便于制造设备而不牺牲高灵敏度或高信号输出。 这可以通过将AMR条纹中的各个感测元件形成，然后连接四个这样的传感元件如惠斯通电桥来实现。 后者附着在永磁体上，该永磁体提供偏置场，其值随着轮齿和谷（分别）移动经过旋转传感器而上升和下降。

公开(公告)号：US20090115405A1

公开(公告)日：2009-05-07

申请号：US11982188

申请日：2007-11-01

申请人： Yimin Guo ,  Grace Gorman

发明人： Yimin Guo ,  Grace Gorman

IPC分类号： G01B7/30 ,  B05D5/12

CPC分类号： G01D5/145

摘要： An integrated angular magnetic sensor apparatus for determining a magnetic field angle within two axes of a plane is formed on a substrate onto which two anisotropic magneto-resistive sensing elements and at least one magneto-resistive sensing element are fabricated. The two anisotropic magneto-resistive sensing elements are oriented such that the output voltages of a first and second of the anisotropic magneto-resistive sensing elements are a function of a first and second trigonometric function (a sine function) of the magnetic field angle to a reference axis. The at least one magneto-resistive sensing element on the substrate and having a fixed reference magnetization oriented with respect to the reference axis such that an output voltage of the at least one magneto-resistive sensing element provides a quadrant indicator for the magnetic field angle with respect to the reference axis. The quadrant indicator is a trigonometric function such as a sine or cosine function.

摘要翻译： 在其上制造两个各向异性磁阻感测元件和至少一个磁阻感测元件的基板上形成用于确定平面的两个轴内的磁场角的集成角度磁传感器装置。 两个各向异性磁阻感测元件被定向成使得第一和第二个各向异性磁阻感测元件的输出电压是与第一和第二个各向异性磁阻感测元件的磁场角的第一和第二三角函数（正弦函数）的函数 参考轴。 所述至少一个磁阻感测元件在所述衬底上并且具有相对于所述参考轴线定向的固定参考磁化，使得所述至少一个磁阻感测元件的输出电压提供用于磁场角的象限指示符， 相对于参考轴。 象限指示器是一个三角函数，如正弦或余弦函数。

公开(公告)号：US20080205131A1

公开(公告)日：2008-08-28

申请号：US12151217

申请日：2008-05-05

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/15 ,  H01L21/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295

摘要： A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2 for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at

摘要翻译： 公开了一种切换MTJ，其具有具有两个或更多个具有相同磁矩但具有不同各向异性的两个或更多个磁性子层的SAF自由层，其通过选择Ni-0.8No 0.2〜 对于较高的各向异性子层，具有10〜30Oe的单轴各向异性的一个子层和CoFeB等。 当从容易轴以<10°角施加场时，两个子层的磁矢量与容易轴旋转以形成不同的角度。 还描述了一种用于选择性地写入沿着与位线段正交的字线的位的方法，并且避免了“首先读取”的需要。 在没有位线脉冲的情况下，施加具有由无脉冲间隔分开的两个相反脉冲的双极字线脉冲，以写入“0”。 与第二字线脉冲相反的位线脉冲写入“1”。

公开(公告)号：US20080062585A1

公开(公告)日：2008-03-13

申请号：US11880585

申请日：2007-07-23

申请人： Yimin Guo ,  Li-Yan Zhu

发明人： Yimin Guo ,  Li-Yan Zhu

IPC分类号： G11B5/133 ,  G11B5/127

CPC分类号： G11B5/39 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Biasing schemes used for CIP GMR devices were previously thought to be impractical for CPP devices due to current shunting by the abutted hard magnets. In the present invention the CPP stripe is a narrow conductor directly above the free layer. The resistivity of the latter is made to be relatively high so the sensing current diverges very little as it passes through it. This makes it possible to use abutted hard magnets for longitudinal bias with virtually no loss of sensing current due to shunting by the magnets.

摘要翻译： CIP GMR器件的偏移方案以前被认为是由CPP器件由于邻接的硬磁体的电流分流而不切实际的。 在本发明中，CPP条纹是直接位于自由层上方的窄导体。 后者的电阻率相对较高，因此当感测电流通过时，感应电流发散很小。 这使得可以使用邻接的硬磁体用于纵向偏置，由于磁体的分流，几乎不会损失感测电流。

公开(公告)号：US20080007994A1

公开(公告)日：2008-01-10

申请号：US11901080

申请日：2007-09-14

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/02

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08

摘要： A toggle MTJ cell is disclosed that has a nearly balanced SAF free layer with two major sub-layers separated by an anti-parallel coupling layer. Within each major sub-layer, there is a plurality of minor sub-layers wherein adjacent minor sub-layers are separated by a parallel coupling layer. The parallel coupling layer is a non-magnetic layer that may be a one or more of Ta, Cu, Cr, Ru, Os, Re, Rh, Nb, Mo, W, Ir, and V, a metal oxide, or dusting of NiCr, Ta, Cu, or NiFeCr. Magnetic moments of major sub-layers are made to be nearly equal so that the net moment of the SAF free layer is essentially zero. The MTJ cell and SAF free layer preferably have an aspect ratio of from 1 to 5. Ferromagnetic coupling between minor sub-layers enables a lower write current and lower power consumption than conventional toggle cell designs.

摘要翻译： 公开了具有几乎平衡的SAF自由层的切换MTJ电池，其中两个主要子层由反平行耦合层隔开。 在每个主要子层内，存在多个次要的子层，其中相邻的次要子层被平行耦合层隔开。 平行耦合层是可以是Ta，Cu，Cr，Ru，Os，Re，Rh，Nb，Mo，W，Ir和V中的一种或多种的非磁性层，金属氧化物或粉尘 NiCr，Ta，Cu或NiFeCr。 使主要子层的磁矩几乎相等，使得SAF自由层的净力矩基本为零。 MTJ电池和SAF自由层优选具有1至5的纵横比。次级子层之间的铁磁耦合使得能够比常规触发电池设计更低的写入电流和更低的功率消耗。

公开(公告)号：US07301734B2

公开(公告)日：2007-11-27

申请号：US11210576

申请日：2005-08-24

申请人： Yimin Guo ,  Li-Yan Zhu

发明人： Yimin Guo ,  Li-Yan Zhu

IPC分类号： G11B5/127 ,  G11B5/33 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is interposed between a hard magnetic biasing layer and the lateral edge of the GMR sensor element. The soft magnetic layer eliminates the need for a seed layer directly between the hard magnetic layer and the GMR element and provides improved coupling to the free layer of the GMR element and a substantial reduction in random domain variations.

摘要翻译： 提供具有改进的纵向偏置的GMR传感器，其形成方法也是如此。 改进的偏置由纵向偏置结构提供，其中软磁性层介于硬磁偏置层和GMR传感器元件的侧边之间。 软磁层消除了直接在硬磁性层和GMR元件之间的种子层的需要，并且提供了与GMR元件的自由层的改进的耦合以及随机域变化的显着减少。

公开(公告)号：US20070268631A1

公开(公告)日：2007-11-22

申请号：US11880956

申请日：2007-07-24

申请人： Yimin Guo ,  Li-Yan Zhu

发明人： Yimin Guo ,  Li-Yan Zhu

IPC分类号： G11B5/127

CPC分类号： G11B5/39 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Biasing schemes used for CIP GMR devices were previously thought to be impractical for CPP devices due to current shunting by the abutted hard magnets. In the present invention the CPP stripe is a narrow conductor directly above the free layer. The resistivity of the latter is made to be relatively high so the sensing current diverges very little as it passes through it. This makes it possible to use abutted hard magnets for longitudinal bias with virtually no loss of sensing current due to shunting by the magnets.

摘要翻译： CIP GMR器件的偏移方案以前被认为是由CPP器件由于邻接的硬磁体的电流分流而不切实际的。 在本发明中，CPP条纹是直接位于自由层上方的窄导体。 后者的电阻率相对较高，因此当感测电流通过时，感应电流发散很小。 这使得可以使用邻接的硬磁体用于纵向偏置，由于磁体的分流，几乎不会损失感测电流。

公开(公告)号：US07280389B2

公开(公告)日：2007-10-09

申请号：US11350119

申请日：2006-02-08

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08

摘要： A toggle MTJ cell is disclosed that has a nearly balanced SAF free layer with two major sub-layers separated by an anti-parallel coupling layer. Within each major sub-layer, there is a plurality of minor sub-layers wherein adjacent minor sub-layers are separated by a parallel coupling layer. The parallel coupling layer is a non-magnetic layer that may be a one or more of Ta, Cu, Cr, Ru, Os, Re, Rh, Nb, Mo, W, Ir, and V, a metal oxide, or dusting of NiCr, Ta, Cu, or NiFeCr. Magnetic moments of major sub-layers are made to be nearly equal so that the net moment of the SAF free layer is essentially zero. The MTJ cell and SAF free layer preferably have an aspect ratio of from 1 to 5. Ferromagnetic coupling between minor sub-layers enables a lower write current and lower power consumption than conventional toggle cell designs.

摘要翻译： 公开了具有几乎平衡的SAF自由层的切换MTJ电池，其中两个主要子层由反平行耦合层隔开。 在每个主要子层内，存在多个次要的子层，其中相邻的次要子层被平行耦合层隔开。 平行耦合层是可以是Ta，Cu，Cr，Ru，Os，Re，Rh，Nb，Mo，W，Ir和V中的一种或多种的非磁性层，金属氧化物或粉尘 NiCr，Ta，Cu或NiFeCr。 使主要子层的磁矩几乎相等，使得SAF自由层的净力矩基本为零。 MTJ电池和SAF自由层优选具有1至5的纵横比。次级子层之间的铁磁耦合使得能够比常规触发电池设计更低的写入电流和更低的功率消耗。

公开(公告)号：US20070177420A1

公开(公告)日：2007-08-02

申请号：US11340989

申请日：2006-01-27

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295

摘要： A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2 for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at

摘要翻译： 公开了一种切换MTJ，其具有具有两个或更多个具有相同磁矩但具有不同各向异性的两个或更多个磁性子层的SAF自由层，其通过选择Ni-0.8No 0.2〜 对于较高的各向异性子层，具有10〜30Oe的单轴各向异性的一个子层和CoFeB等。 当从容易轴以<10°角施加场时，两个子层的磁矢量与容易轴旋转以形成不同的角度。 还描述了一种用于选择性地写入沿着与位线段正交的字线的位的方法，并且避免了“首先读取”的需要。 在没有位线脉冲的情况下，施加具有由无脉冲间隔分开的两个相反脉冲的双极字线脉冲，以写入“0”。 与第二字线脉冲相反的位线脉冲写入“1”。

公开(公告)号：US20060028862A1

公开(公告)日：2006-02-09

申请号：US10910725

申请日：2004-08-03

申请人： Tai Min ,  Yimin Guo ,  Pokang Wang

发明人： Tai Min ,  Yimin Guo ,  Pokang Wang

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/16

摘要： An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.