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131 条记录 (耗时 0.038 秒)

    Patterning process and resist composition
    54.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08507175B2

    公开(公告)日：2013-08-13

    申请号：US12905426

    申请日：2010-10-15

    申请人： Jun Hatakeyama ,  Masaki Ohashi ,  Youichi Ohsawa ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Masaki Ohashi ,  Youichi Ohsawa ,  Kazuhiro Katayama

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/028

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/095

    摘要： The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.

    摘要翻译： 该方法通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，烘烤，曝光，曝光后烘烤和显影来形成图案。 抗蚀剂组合物包含聚合物，其包含具有酸不稳定基团并且基本上不溶于碱性显影剂的重复单元，PAG，能够产生氨基的PBG，用于中和PAG酸失活的猝灭剂和有机溶剂。 来自猝灭剂和PBG的氨基的总量大于来自PAG的酸的量。 未曝光区域和过度曝光区域不溶解在显影剂中，而只有中间曝光剂量区域溶解在显影剂中。 通过单次曝光和开发将单线分成两组，分辨率翻了一番。

    Sulfonium salt, resist composition, and patterning process
    56.
    发明授权
    Sulfonium salt, resist composition, and patterning process 有权
    锍盐，抗蚀剂组合物和图案化工艺

    公开(公告)号：US08173354B2

    公开(公告)日：2012-05-08

    申请号：US12831621

    申请日：2010-07-07

    申请人： Youichi Ohsawa ,  Masaki Ohashi

    发明人： Youichi Ohsawa ,  Masaki Ohashi

    IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C309/06 ,  C07C309/25 ,  C07C309/28

    CPC分类号： G03F7/0045 ,  C07C381/12 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122

    摘要： A sulfonium salt having a triphenylsulfonium cation and a sulfite anion within the molecule is best suited as a photoacid generator in chemically amplified resist compositions. Upon exposure to high-energy radiation, the sulfonium salt generates a sulfonic acid, which facilitates efficient scission of acid labile groups in chemically amplified positive resist compositions. Because of substantial non-volatility under high vacuum conditions in the EB or EUV lithography, the risk of the exposure tool being contaminated is minimized.

    摘要翻译： 在分子中具有三苯基锍阳离子和亚硫酸根阴离子的锍盐最适合作为化学增强抗蚀剂组合物中的光致酸产生剂。 在暴露于高能量辐射下，锍盐产生磺酸，这有助于化学放大的正性抗蚀剂组合物中酸不稳定基团的有效断裂。 由于在EB或EUV光刻中的高真空条件下具有显着的非挥发性，所以被污染的曝光工具的风险最小化。

    Sulfonium salt-containing polymer, resist composition, and patterning process
    58.
    发明授权
    Sulfonium salt-containing polymer, resist composition, and patterning process 有权
    含锍盐的聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US08048610B2

    公开(公告)日：2011-11-01

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi Ohsawa ,  Jun Hatakeyama ,  Seiichiro Tachibana ,  Takeshi Kinsho

    发明人： Youichi Ohsawa ,  Jun Hatakeyama ,  Seiichiro Tachibana ,  Takeshi Kinsho

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/11

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    Positive resist compositions and patterning process
    59.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US07993811B2

    公开(公告)日：2011-08-09

    申请号：US12355446

    申请日：2009-01-16

    申请人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/143

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a satisfactory mask fidelity and a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的特定重复单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。 当通过光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度和最小LER的图案。 本文中R1是H或甲基，R2是酸不稳定基团，当X是CH2时，R3是CO2R4，当X是O时，R3是H，CO2R4，R4是一价C1-C20烃基，m是1或2。

    PATTERNING PROCESS AND RESIST COMPOSITION
    60.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号：US20110033803A1

    公开(公告)日：2011-02-10

    申请号：US12849344

    申请日：2010-08-03

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Youichi Ohsawa ,  Masaki Ohashi

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Youichi Ohsawa ,  Masaki Ohashi

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/004 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译： 通过将包含含内含重复单元，含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，形成图案形成图案 曝光，PEB和显影以形成第一抗蚀剂图案，将第一抗蚀剂图案加热至酸失活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上 以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。