Abstract:
A method for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition provides a chamber including a stationary support, through which fluid flows, that supports a moveable substrate. A moveable substrate includes a levitation stabilizing structure on the substrate that defines an enclosed interior impingement area of the substrate. The moveable substrate is positioned proximate to the stationary support so that the stationary support extends beyond the enclosed interior impingement area and the fluid flow is directed within the enclosed interior impingement area of the moveable substrate. A fluid flow, provided from a pressurized-gas source through the stationary support, impinges on the moveable substrate surface within the enclosed interior impingement area to levitate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure to deposit a thin film on the moveable substrate.
Abstract:
A frame sealant and a method of preparing the same as well as a display device containing the frame sealant. The frame sealant includes an epoxy-acrylic resin, an acrylic resin, a thermal curing agent, a coupling agent, a photoinitiator, and an organic filler, and further an one-dimensional nano-material as an inorganic filler which is capable of cross-linking with the epoxy-acrylic resin. The one-dimensional nano-material after cross-linking with the epoxy-acrylic resin will form an interlaced network, which can prevent granular materials from precipitating and improve the display quality.
Abstract:
Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.
Abstract:
A substrate for fluidic levitation processing includes a moveable substrate and a levitation stabilizing structure located on the moveable substrate. The levitation stabilizing structure defines an enclosed interior impingement area of the moveable substrate that stabilizes lateral displacement of the moveable substrate during fluidic levitation processing.
Abstract:
A method for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition provides a chamber including a stationary support, through which fluid flows, that supports a moveable substrate. A moveable substrate includes a levitation stabilizing structure on the substrate that defines an enclosed interior impingement area of the substrate. The moveable substrate is positioned proximate to the stationary support so that the stationary support extends beyond the enclosed interior impingement area and the fluid flow is directed within the enclosed interior impingement area of the moveable substrate. A fluid flow, provided from a pressurized-gas source through the stationary support, impinges on the moveable substrate surface within the enclosed interior impingement area to levitate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure to deposit a thin film on the moveable substrate.
Abstract:
A thin film deposition system for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition includes a chamber and a moveable substrate having a levitation stabilizing structure located on the moveable substrate that defines an enclosed interior impingement area of the moveable substrate. A stationary support, located in the chamber, supports the moveable substrate. The stationary support extends beyond the enclosed interior impingement area. A pressurized-fluid source provides a fluid flow through the stationary support that impinges on the moveable substrate within the enclosed interior impingement area of the moveable substrate sufficient to levitate the moveable substrate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure.
Abstract:
Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.
Abstract:
A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A deposition method is also disclosed.
Abstract:
Characteristics of a film formed on a substrate and a manufacturing throughput can be improved. A substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement unit; and a gas dispersion unit, the gas dispersion unit including: a first supply region facing the substrate and including a first gas dispersion hole configured to supply a first gas and a second gas dispersion hole configured to supply a second gas; and a second supply region facing a portion of a surface of the substrate placement unit outer than a portion of the surface of the substrate placement unit occupied by the substrate and including a third gas dispersion hole having a diameter greater than that of the second gas dispersion hole and configured to supply the second gas.
Abstract:
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.