摘要:
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.
摘要:
A box for a microelectronic device includes a first portion and a second portion able to be assembled in order to define, in an assembled position, a housing space for the microelectronic device. A face of the first portion is facing a face of the second portion in the assembled position. The first zones facing the faces form an interface for attaching the first portion and second portion. The second zones face faces forming a cavity for receiving the microelectronic device. At least one among the first portion and the second portion includes at least one element for electrical connection. The first portion and the second portion can apply at least one connection pad of the microelectronic device on the element for connection in the assembled position.
摘要:
Semiconductor packages and methods of manufacturing semiconductor packages are described herein. In certain embodiments, the semiconductor package includes a housing including a first compartment and a second compartment, the first and second compartments being divided from one another. The semiconductor package can also include an integrated device die disposed in the first compartment, and a radio frequency (RF) absorber disposed in the second compartment.
摘要:
The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.
摘要:
A highly-reliable semiconductor device has improved adhesion between a sealing material and a sealed metal member and/or a case member. In some implementations, the semiconductor device includes: a laminated substrate on which a semiconductor element is mounted; and a sealing material. In some implementations, the sealing material contains an epoxy base resin, a curing agent, and a phosphonic acid.
摘要:
One aspect of the present disclosure provides an interposer for a semiconductor package. The interposer includes a substrate portion and a wall portion disposed on the substrate portion. The substrate portion has a first side, a second side, and an electrical interconnect structure between the first side and the second side. The substrate portion is substantially free from conductive through vias, and the cost for fabricating through silicon vias (TSV) is very expensive; therefore, the fabrication cost of the interposer can be dramatically reduced. In addition, the wall portion is disposed on the first side and defining an aperture exposing a portion of the electrical interconnect structure. At least one semiconductor die can be bonded to the interposer and inside the aperture. Consequently, the height of the semiconductor package is lower than the design of disposing the semiconductor die on top of the interposer.
摘要:
A method includes forming a molded panel that includes a number of integrated circuits, fan-out components and stiffeners embedded in an encapsulation material. A redistribution layer is formed over the integrated circuits and the fan-out components. The redistribution layer is electrically coupled to contacts of the integrated circuits. The molded panel is singulated to form electronic devices. Each electronic device each an integrated circuit that is separated from a fan-out component by a portion of the encapsulation material and a stiffener separated from the fan-out component by a second portion of the encapsulation material.
摘要:
Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (“PoP”) with enhanced tolerance for warping. In one such packaged microelectronic device, at least one redistribution layer includes first interconnect pads on a lower surface and second interconnect pads on an upper surface of the at least one redistribution layer. Interconnect structures are on and extend away from corresponding upper surfaces of the second interconnect pads. A microelectronic device is coupled to an upper surface of the at least one redistribution layer. A dielectric layer surrounds at least portions of shafts of the interconnect structures. The interconnect structures have upper ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.
摘要:
A semiconductor device includes a housing with a fragile portion. The fragile unit or portion has a resistance to a pressure or a melting point temperature that is lower than other portions of the housing. The semiconductor device further includes a plurality of semiconductor elements disposed inside the housing. Each semiconductor element includes a semiconductor element region having a first surface and a second surface opposite to the first surface. A first electrode is provided on the first surface and a second electrode is provided on the second surface.
摘要:
A hermetically packaged microelectromechanical system (MEMS) device has a substrate with an assembly pad (101) and a plurality of terminals (102); a chip (110) with a MEMS mechanical element (111) of a first height (111a) assembled on the pad and connected to the terminals by wires (120) with an insulating coat (121); a ridge (130) on the substrate, which surrounds the MEMS element (111) with a second height (130c) greater than the first height and comprises a plastic compound (131) filled with particles (132) and a surface (130a, 130b) having an adhering moisture-impermeable seal layer (133); and a moisture-impervious lid (140) attached to the ridge by moisture-proof bonds (150, 151), sealing the volume (160) enclosed by the lid, the chip, and the metalized ridge as a hermetic space for the MEMS element (111).