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51.发明授权Ag ball, ag core ball, flux-coated ag ball, flux-coated ag core ball, solder joint, formed solder, solder paste and ag paste 有权Ag球，Ag芯球，助焊剂球，助焊剂球芯，焊接接头，成型焊料，焊膏和焊膏公开(公告)号：US09266196B2
公开(公告)日：2016-02-23
申请号：US14613256
申请日：2015-02-03
Applicant: Senju Metal Industry Co., Ltd.
Inventor： Takashi Akagawa , Hiroyoshi Kawasaki , Kazuhiko Matsui , Yuichi Koikeda , Masaru Sasaki , Hiroyuki Yamasaki , Takahiro Roppongi , Daisuke Soma , Isamu Sato
IPC: H01B5/00 , H01L23/48 , B32B15/04 , B23K35/02 , B23K35/00 , C22C5/06 , B23K35/30 , H01B1/02 , H01L23/00 , C22C19/03 , C22C19/07
CPC classification number: B23K35/025 , B22F1/0062 , B22F1/0074 , B22F1/02 , B23K35/00 , B23K35/0244 , B23K35/3006 , B23K35/3033 , B23K35/3046 , C22C5/06 , C22C13/00 , C22C19/03 , C22C19/07 , H01B1/02 , H01L24/13 , H01L2224/13014 , H01L2224/13139 , H01L2224/13655 , H01L2224/13657 , H01L2924/0105 , H01L2924/01082 , H01L2924/01083 , H01L2924/0109 , H01L2924/01092 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/20645 , H01L2924/20646 , H01L2924/20647 , H01L2924/20648 , H01L2924/20649 , H01L2924/2065
Abstract: Providing an Ag ball having a low alpha dose and a high sphericity regardless of impurity elements having an amount equal to or more than a predetermined value except for Ag. In order to suppress a soft error and reduce an connection fault, a content of U is equal to or less than 5 ppb, a content of Th is equal to or less than 5 ppb, a purity is equal to or more than 99.9% but equal to or less than 99.9995%, an alpha dose is equal to or less than 0.0200 cph/cm2, a content of either Pb or Bi or a total content of both Pb and Bi is equal to or more than 1 ppm, and a sphericity is equal to or more than 0.90.
Abstract translation: 提供具有低α剂量和高球形度的Ag球，而不管除了Ag之外具有等于或大于预定值的量的杂质元素。 为了抑制软错误并减少连接故障，U的含量等于或小于5ppb，Th的含量等于或小于5ppb，纯度等于或大于99.9％，但是 等于或小于99.9995％，α剂量等于或小于0.0200cph / cm 2，Pb或Bi的含量或Pb和Bi的总含量等于或大于1ppm，并且球形度 等于或大于0.90。
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公开(公告)号：US09216478B2
公开(公告)日：2015-12-22
申请号：US14146086
申请日：2014-01-02
Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
Inventor： Kazuhiro Maeno
CPC classification number: B23K35/282 , B23K35/264 , B23K35/286 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/2711 , H01L2224/27334 , H01L2224/29118 , H01L2224/32227 , H01L2224/8309 , H01L2224/83192 , H01L2224/83424 , H01L2224/83447 , H01L2224/83815 , H01L2924/351 , H01L2924/01049 , H01L2924/00014 , H01L2924/01083 , H01L2924/01015 , H01L2924/01032 , H01L2924/01013 , H01L2924/00
Abstract: A solder includes zinc as a main component and the solder contains 6 to 8 mass percent of indium. A solder includes zinc as a main component, wherein the solder contains only indium. In a die-bonding structure in which a semiconductor chip is connected to a bonded member by a solder, the solder made of zinc as a main component and contains indium.
Abstract translation: 焊料包含锌作为主要成分，焊料含有6〜8质量％的铟。 焊料包括锌作为主要成分，其中焊料仅含有铟。 在半导体芯片通过焊料与接合部件连接的芯片接合结构中，以锌作为主要成分并且含有铟的焊料。
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公开(公告)号：US09204551B2
公开(公告)日：2015-12-01
申请号：US13883130
申请日：2011-11-08
Applicant: Masahiro Kubo
Inventor： Masahiro Kubo
CPC classification number: H05K1/18 , G02B6/4214 , G02B6/4232 , G02B6/4239 , G02B6/4274 , H01L23/13 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0401 , H01L2224/05568 , H01L2224/05571 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/10145 , H01L2224/10175 , H01L2224/13011 , H01L2224/13019 , H01L2224/13023 , H01L2224/13109 , H01L2224/13111 , H01L2224/1319 , H01L2224/16237 , H01L2224/17505 , H01L2224/17517 , H01L2224/29111 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81385 , H01L2224/814 , H01L2224/81815 , H01L2224/81902 , H01L2924/12042 , H01L2924/15787 , H05K1/0274 , H05K1/111 , H05K3/3421 , H05K3/3436 , H05K2201/09045 , H05K2201/09472 , H05K2203/0307 , H05K2203/1173 , Y02P70/613 , Y10T29/49144 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/00014 , H01L2924/01083 , H01L2924/00012 , H01L2924/01049 , H01L2924/014 , H01L2924/00
Abstract: Provided is a mounting structure capable of maintaining highly accurate connection reliability even when the temperature of the environment in which the mounting structure is used is high. Mounting structure (10) includes electronic component (11), metal (12), wiring substrate (13), and a preventing structure. Electronic component (11) includes first electrode (14). The melting point of metal (12) is 130° C. or less. Wiring substrate (13) includes second electrode (15) electrically connected to first electrode (14) via metal (12). The preventing structure prevents flowing-out of metal (12) in a melted state from a region where first electrode (14) and second electrode (15) are formed. Further, preventing structure (14) is formed in at least one member selected from electronic component (11) and wiring substrate (12).
Abstract translation: 提供了即使当使用安装结构的环境的温度高时也能够保持高度精确的连接可靠性的安装结构。 安装结构（10）包括电子部件（11），金属（12），布线基板（13）和防止结构。 电子部件（11）包括第一电极（14）。 金属（12）的熔点为130℃以下。 配线基板（13）包括通过金属（12）与第一电极（14）电连接的第二电极（15）。 防止结构防止从形成第一电极（14）和第二电极（15）的区域流出熔融状态的金属（12）。 此外，防止结构（14）形成在从电子部件（11）和布线基板（12）中选择的至少一个中。
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54.发明授权Circuit connecting material and semiconductor device manufacturing method using same 有权电路连接材料和使用其的半导体器件制造方法
公开(公告)号：US09202755B2
公开(公告)日：2015-12-01
申请号：US14387783
申请日：2013-03-06
Applicant: DEXERIALS CORPORATION
Inventor： Hironobu Moriyama
IPC: H01L21/00 , H01L21/78 , H01L23/00 , H01L21/683 , H01L25/065 , H01L25/00 , C09J7/00 , H01L21/56
CPC classification number: H01L21/78 , C09J7/00 , C09J7/10 , C09J2201/134 , C09J2201/36 , C09J2203/326 , H01L21/563 , H01L21/6836 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/91 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2221/68377 , H01L2224/11002 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2224/16057 , H01L2224/16145 , H01L2224/16225 , H01L2224/27002 , H01L2224/27436 , H01L2224/29005 , H01L2224/29082 , H01L2224/2929 , H01L2224/29386 , H01L2224/29387 , H01L2224/29388 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81193 , H01L2224/81203 , H01L2224/81204 , H01L2224/81805 , H01L2224/81815 , H01L2224/81855 , H01L2224/83191 , H01L2224/83203 , H01L2224/83204 , H01L2224/83862 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2924/01322 , H01L2924/14 , Y10T403/479 , H01L2924/00 , H01L2224/11 , H01L2224/27 , H01L2924/01082 , H01L2924/01083 , H01L2924/01047 , H01L2924/01029 , H01L2924/01051 , H01L2924/0665 , H01L2924/207 , H01L2224/81 , H01L2224/83 , H01L2924/05442 , H01L2924/05341 , H01L2924/0532
Abstract: Provided are a circuit connecting material able to provide good bonding with an opposing electrode, and a semiconductor device manufacturing method using the same. The present invention uses a circuit connecting material, in which a first adhesive layer to be adhered to the semiconductor chip side, and a second adhesive layer having a lowest melting viscosity attainment temperature higher than that of the first adhesive layer are laminated. When the semiconductor chip on which the circuit connecting material is stuck is mounted on a circuit board, a thickness of the first adhesive layer is within a range satisfying formula (1), thereby providing good bonding with the opposing electrode.
Abstract translation: 提供能够提供与相对电极的良好结合的电路连接材料，以及使用该电路连接材料的半导体器件制造方法。 本发明使用其中粘附到半导体芯片侧的第一粘合剂层和具有比第一粘合剂层更高的最低熔融粘度达到温度的第二粘合剂层的电路连接材料。 当电路连接材料被卡住的半导体芯片安装在电路板上时，第一粘合层的厚度在满足公式（1）的范围内，从而与相对电极提供良好的结合。
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55.发明申请SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS 审中-公开半导体装置，制造半导体装置的方法和电子装置
公开(公告)号：US20150303167A1
公开(公告)日：2015-10-22
申请号：US14790146
申请日：2015-07-02
Applicant: c/o SONY CORPORATION
Inventor： Satoru WAKIYAMA , Hiroshi OZAKI
CPC classification number: H01L24/81 , H01L21/563 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0401 , H01L2224/05567 , H01L2224/1134 , H01L2224/11416 , H01L2224/11436 , H01L2224/11825 , H01L2224/11848 , H01L2224/13019 , H01L2224/13076 , H01L2224/13147 , H01L2224/1319 , H01L2224/13562 , H01L2224/1357 , H01L2224/13655 , H01L2224/16238 , H01L2224/16503 , H01L2224/2919 , H01L2224/73104 , H01L2224/73204 , H01L2224/8102 , H01L2224/81193 , H01L2224/81355 , H01L2224/81411 , H01L2224/81413 , H01L2224/81805 , H01L2224/8181 , H01L2224/81815 , H01L2224/81951 , H01L2224/83104 , H01L2224/83191 , H01L2224/83862 , H01L2224/94 , H01L2225/06513 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/15321 , H01L2924/15788 , H01L2924/01083 , H01L2924/01049 , H01L2924/00012 , H01L2224/11 , H01L2224/27416 , H01L2224/27436 , H01L2224/05552 , H01L2924/00
Abstract: A semiconductor apparatus, including: a semiconductor component; a Cu stud bump that is formed on the semiconductor component; and a solder bump configured to electrically connect to the Cu stud bump.
Abstract translation: 一种半导体装置，包括：半导体元件; 形成在所述半导体部件上的Cu凸块; 以及被配置为电连接到所述Cu柱凸块的焊料凸块。
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公开(公告)号：US20150287696A1
公开(公告)日：2015-10-08
申请号：US14420181
申请日：2013-03-11
Inventor： Mitsuhiko Ueda , Yoshiharu Sanagawa , Takanori Aketa , Shintaro Hayashi
IPC: H01L23/00
CPC classification number: H01L24/97 , B23K20/00 , H01L21/52 , H01L21/6836 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/75 , H01L24/83 , H01L2221/68327 , H01L2221/68381 , H01L2224/04026 , H01L2224/05155 , H01L2224/05166 , H01L2224/05664 , H01L2224/05669 , H01L2224/2745 , H01L2224/2746 , H01L2224/29011 , H01L2224/29012 , H01L2224/29013 , H01L2224/2908 , H01L2224/29082 , H01L2224/29111 , H01L2224/29144 , H01L2224/29147 , H01L2224/3003 , H01L2224/32225 , H01L2224/32227 , H01L2224/32501 , H01L2224/32505 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/75252 , H01L2224/75301 , H01L2224/75744 , H01L2224/75745 , H01L2224/75753 , H01L2224/75901 , H01L2224/7598 , H01L2224/8301 , H01L2224/83013 , H01L2224/83065 , H01L2224/83075 , H01L2224/8309 , H01L2224/83123 , H01L2224/83127 , H01L2224/83193 , H01L2224/83203 , H01L2224/83207 , H01L2224/83805 , H01L2224/83825 , H01L2224/8383 , H01L2224/83906 , H01L2224/83907 , H01L2224/92247 , H01L2224/97 , H01L2924/01322 , H01L2924/10161 , H01L2924/10162 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1461 , H01L2224/83 , H01L2924/0105 , H01L2924/00014 , H01L2924/01032 , H01L2924/01083 , H01L2924/01029 , H01L2924/00012 , H01L2924/00
Abstract: A mounting method of mounting chips on a substrate includes a temporarily-bonding process, and a main-bonding process. Temporarily-bonding process is to perform a first basic process, repeatedly depending on the number of the chips. First basic process includes a first step and a second step. First step is to align, on a first metal layer of the substrate, a second metal layer of each chip. Second step is to temporarily bond each chip by subjecting the first and second metal layers to solid phase diffusion bonding. Main-bonding process is to perform a second basic process, repeatedly depending on the number of the chips. Second basic process includes a third step and a fourth step. Third step is to recognize a position of each chip temporarily mounted on the substrate. Fourth step is to firmly bond each chip by subjecting the first and second metal layers to liquid phase diffusion bonding.
Abstract translation: 将芯片安装在基板上的安装方法包括临时粘合工艺和主要粘结工艺。 暂时粘接过程是根据芯片的数量重复执行第一个基本过程。 第一基本过程包括第一步骤和第二步骤。 第一步是在衬底的第一金属层上对准每个芯片的第二金属层。 第二步是通过使第一和第二金属层进行固相扩散接合来临时粘合每个芯片。 主键合过程是根据芯片的数量重复执行第二个基本过程。 第二基本过程包括第三步骤和第四步骤。 第三步是识别临时安装在基板上的每个芯片的位置。 第四步是通过使第一和第二金属层进行液相扩散接合来牢固地结合每个芯片。
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57.发明授权Semiconductor devices having stacked solder bumps with intervening metal layers to provide electrical interconnections 有权半导体器件具有堆叠的具有中间金属层的焊料凸块以提供电互连
公开(公告)号：US09142498B2
公开(公告)日：2015-09-22
申请号：US13917000
申请日：2013-06-13
Applicant: Boin Noh , Yonghwan Kwon , Sun-Hee Park
Inventor： Boin Noh , Yonghwan Kwon , Sun-Hee Park
IPC: H01L23/498 , H01L23/00 , H01L23/31 , H01L21/56
CPC classification number: H01L23/49811 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05558 , H01L2224/05561 , H01L2224/05562 , H01L2224/05568 , H01L2224/05655 , H01L2224/1147 , H01L2224/11849 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13155 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81011 , H01L2224/81024 , H01L2224/81191 , H01L2224/81801 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/3512 , H01L2924/381 , H01L2924/014 , H01L2924/01047 , H01L2924/0105 , H01L2924/00012 , H01L2924/01074 , H01L2924/01029 , H01L2924/01023 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2924/0103 , H01L2924/01058 , H01L2224/05552 , H01L2924/00
Abstract: An electrical interconnection can be provided using a bump stack including at least two solder bumps which are stacked on one another and at least one intermediate layer interposed between the at least stacked two solder bumps.
Abstract translation: 可以使用包括彼此堆叠的至少两个焊料凸块的凸起堆叠以及置于至少堆叠的两个焊料凸块之间的至少一个中间层来提供电互连。
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公开(公告)号：US09112059B2
公开(公告)日：2015-08-18
申请号：US13349155
申请日：2012-01-12
Applicant: Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
Inventor： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
CPC classification number: H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
Abstract translation: 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。
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公开(公告)号：US20150223316A1
公开(公告)日：2015-08-06
申请号：US14417370
申请日：2013-08-09
Applicant: Mitsubishi Electric Corporation
Inventor： Junji Fujino , Yutaka Yoneda , Yoshitaka Onishi , Masafumi Sugawara
IPC: H05K1/02
CPC classification number: H05K1/0203 , H01L23/13 , H01L23/36 , H01L23/3735 , H01L23/492 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L25/07 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/0603 , H01L2224/06181 , H01L2224/29111 , H01L2224/32245 , H01L2224/37012 , H01L2224/37147 , H01L2224/4005 , H01L2224/40105 , H01L2224/4024 , H01L2224/4118 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/48472 , H01L2224/49175 , H01L2224/73263 , H01L2224/73265 , H01L2224/83424 , H01L2224/83447 , H01L2224/8346 , H01L2224/83801 , H01L2224/84447 , H01L2224/84801 , H01L2224/85205 , H01L2224/92247 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/1576 , H01L2924/16152 , H01L2924/16172 , H01L2924/16251 , H01L2924/181 , H01L2924/19107 , H01L2224/48247 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2924/00014 , H01L2224/92252 , H01L2224/85 , H01L2224/40499 , H01L2224/8546 , H01L2224/85424 , H01L2224/85447 , H01L2924/01074 , H01L2224/3716 , H01L2224/37124 , H01L2924/01083 , H01L2924/01051 , H01L2924/00 , H01L2924/207 , H01L2224/48624 , H01L2924/00011 , H01L2224/48647 , H01L2224/4866 , H01L2224/48824 , H01L2224/4886 , H01L2224/48747 , H01L2224/48847 , H01L2224/48724 , H01L2224/4876 , H01L2924/013 , H01L2924/01029 , H01L2924/01047 , H01L2924/00013 , H01L2924/2076
Abstract: An electric power semiconductor device includes a heat transfer plate. A printed wire board is spaced a predetermined gap apart from the heat transfer plate. An opening portion is provided in the vicinity of an electrode strip formed on the outer side of the printed wire board. An electric power semiconductor element is disposed between the heat transfer plate and the printed wire board, and adhered to the heat transfer plate. A wiring member has one end bonded to a first bonding portion of a main power electrode of the electric power semiconductor element, and the other end is bonded to a second bonding portion. At least part of the second bonding portion is included in a space that extends from the main power electrode to the printed wire board, and the first bonding portion is included in a space that extends from the opening portion.
Abstract translation: 电力半导体装置包括传热板。 印刷线路板与传热板间隔开预定间隙。 在形成在印刷线路板的外侧的电极条的附近设置有开口部。 电力半导体元件设置在传热板和印刷线路板之间，并附着在传热板上。 布线构件的一端与电力半导体元件的主电极的第一接合部分接合，另一端接合到第二接合部。 第二接合部的至少一部分包括在从主电极延伸到印刷线基板的空间中，并且第一接合部包括在从开口部延伸的空间中。
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60.发明申请CORE BALL, SOLDER PASTE, FORMED-SOLDER, FLUX-COATED CORE BALL AND SOLDER JOINT 有权核心球，焊膏，成型焊丝，镀芯芯球和焊接接头
公开(公告)号：US20150217408A1
公开(公告)日：2015-08-06
申请号：US14613175
申请日：2015-02-03
Applicant: Senju Metal lndustry Co., Ltd.
Inventor： Hiroyoshi KAWASAKI , Shigeki KOND , Atsushi IKEDA , Takahiro ROPPONGI , Daisuke SOMA , Isamu SATO
CPC classification number: B23K35/025 , B23K35/0244 , B23K35/262 , B23K35/302 , C22C9/00 , C22C12/00 , C22C13/00 , C22C13/02 , C22F1/08 , H01B1/02 , H01L24/13 , H01L2224/13014 , H01L2224/13147 , H01L2224/13561 , H01L2224/13611 , H01L2224/13655 , H01L2224/13657 , H01L2924/01015 , H01L2924/01026 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01083 , H01L2924/0109 , H01L2924/01092 , H01L2924/014 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/01028 , H01L2924/00011
Abstract: Providing a core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is equal to or higher than 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.
Abstract translation: 提供一种芯球，其中设置了结熔融温度和低α剂量以抑制软错误产生并解决安装问题。 作为核心的金属粉末是球体。 金属粉末的Cu球的纯度等于或高于99.9％但等于或小于99.995％。 Pb和Bi中的一种或Pb和Bi的总含量的含量等于或高于1ppm。 Cu球的球形度等于或高于0.95。 用于涂覆Cu球的焊料镀覆膜包括Sn-Bi基合金。 包含在焊料镀膜中的U等于或小于5ppb，Th等于或小于5ppb。 芯球的α剂量等于或小于0.0200cph / cm 2。
