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公开(公告)号:US4988533A
公开(公告)日:1991-01-29
申请号:US203583
申请日:1988-05-27
IPC分类号: C23C16/40
CPC分类号: C23C16/402
摘要: A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
摘要翻译: 使用单个处理室在温度敏感晶片上沉积氧化硅层的处理装置和方法向室提供氧化亚氮气体,其中激发能由远程产生的等离子体提供,同时将硅烷气体与照射晶片同时 原位产生的紫外线能量以产生氧化硅层。
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公开(公告)号:US4949671A
公开(公告)日:1990-08-21
申请号:US292624
申请日:1985-12-21
申请人: Cecil J. Davis , Robert T. Matthews , Rudy L. York , Joseph D. Luttmer , Dwain R. Jakubik , James B. Hunter
发明人: Cecil J. Davis , Robert T. Matthews , Rudy L. York , Joseph D. Luttmer , Dwain R. Jakubik , James B. Hunter
IPC分类号: H01J37/32
CPC分类号: H01J37/3244
摘要: A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.
摘要翻译: 一种处理装置和方法,其中在面向下的晶片的表面附近提供两个单独的气体进料。 可以使用护罩来最大化两种气体进料流的混合而没有过多的停留时间。
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公开(公告)号:US4916091A
公开(公告)日:1990-04-10
申请号:US284835
申请日:1988-12-13
IPC分类号: C23C16/40 , H01L21/316
CPC分类号: H01L21/02129 , C23C16/402 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31625
摘要: A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.
摘要翻译: 一种处理装置和方法,利用单个处理室,利用硅源和掺杂剂气体以及来自氧源和另外的紫外光源的远距离等离子体沉积掺杂或未掺杂二氧化硅的层。
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公开(公告)号:US4910043A
公开(公告)日:1990-03-20
申请号:US74415
申请日:1987-07-16
IPC分类号: C04B41/53 , C04B41/91 , C23F4/00 , H01L21/3213
CPC分类号: C04B41/91 , C04B41/5346 , C23F4/00 , H01L21/32136
摘要: A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.
摘要翻译: 一种处理装置和方法,该处理装置和方法利用单个处理室来沉积具有硅源的氮化硅,包括氮源的远程等离子体,附加到处理室中的额外的紫外线能量以提供硅源的附加分子激发。
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公开(公告)号:US4906328A
公开(公告)日:1990-03-06
申请号:US284784
申请日:1988-12-12
IPC分类号: A01B15/06
CPC分类号: A01B15/06 , Y10S438/906
摘要: A processing apparatus and method utilizing a single process chamber to remove organics and metallic contaminates, remove native oxides, oxidize by heat and a oxidizing source, depositing a layer over the oxide formed with the capability of providing an source of additional ultraviolet light.
摘要翻译: 一种利用单一处理室去除有机物和金属污染物,去除天然氧化物,通过热和氧化源氧化的处理装置和方法,在形成有氧化物的层上沉积一层以提供另外的紫外光源的能力。
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公开(公告)号:US4891087A
公开(公告)日:1990-01-02
申请号:US67055
申请日:1987-06-25
申请人: Cecil J. Davis , John E. Spencer , Thomas D. Bonifield , Rhett B. Jucha , William J. Stiltz , Randall E. Johnson , Joseph E. Whetsel , John I. Jones
发明人: Cecil J. Davis , John E. Spencer , Thomas D. Bonifield , Rhett B. Jucha , William J. Stiltz , Randall E. Johnson , Joseph E. Whetsel , John I. Jones
IPC分类号: H01J37/32
CPC分类号: H01J37/32623 , H01J37/32532 , H01J37/32642 , H01J37/32743 , Y10S156/915
摘要: A radio frequency (RF) glow discharge plasma etch electrode design is disclosed which is capable of creating high power density plasma with uniform etch rates, while providing access for automatic loading semiconductor wafers from outside of the plasma region. The electrode assembly comprises of an electrode to which RF energy is applied surrounded by an insulator, which in turn surrounded a grounded surface all of which have cylindrical symmetry. When placed a small distance from a flat, grounded substrate, the electrode assembly creates a volume which can effectively combine a high power density plasma, while maintaining a sufficient channel for pumping a gas flow and for observing the plasma optically. The same channel is widened for automatic transport of semiconductor wafers from outside of the plasma reactor chamber. Such confined high power density plasma are important for high rate, uniform, anisotropic etching, especially for silicon dioxide.
摘要翻译: 公开了射频(RF)辉光放电等离子体蚀刻电极设计,其能够产生具有均匀蚀刻速率的高功率密度等离子体,同时提供从等离子体区域外部自动加载半导体晶片的通路。 电极组件包括由绝缘体围绕的RF能量施加的电极,该电极又包围着所有这些具有圆柱对称的接地表面。 当从平坦接地的基板放置一小段距离时,电极组件产生能够有效地组合高功率密度等离子体的体积,同时保持用于泵送气流和用于观察等离子体的足够通道。 相同的通道被加宽以用于从等离子体反应器室的外部自动输送半导体晶片。 这种受限制的高功率密度等离子体对于高速率,均匀的各向异性蚀刻,特别是二氧化硅是重要的。
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公开(公告)号:US4855016A
公开(公告)日:1989-08-08
申请号:US201300
申请日:1988-05-27
IPC分类号: C23F4/00 , H01L21/3213
CPC分类号: H01L21/32136 , C23F4/00
摘要: A process for etch of Copper doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of BCl.sub.3, Cl.sub.2, and a source of hydrocarbons with the process chamber within the process module being generally at ambient temperatures.
摘要翻译: 在低压工艺模块中利用远程和原位等离子体组合的铜掺杂铝膜的蚀刻工艺,等离子体是由BCl3,Cl2和烃源与混合过程中的工艺室产生的 模块通常在环境温度下。
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公开(公告)号:US4849068A
公开(公告)日:1989-07-18
申请号:US211110
申请日:1988-06-21
申请人: Cecil J. Davis , Duane E. Carter , Rhett B. Jucha
发明人: Cecil J. Davis , Duane E. Carter , Rhett B. Jucha
IPC分类号: H01J37/32
CPC分类号: H01J37/3244
摘要: An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.
摘要翻译: 用于反应离子蚀刻或等离子体蚀刻的装置,其中晶片面向下。 工艺气体通过位于晶片下方并具有远离晶片的孔的分配器供应。 真空(排气)端口位于分配器下面,使得在晶片表面附近没有大量气体流动。 优选将工艺气体及其产品输送到晶片的表面,由扩散来支配。
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公开(公告)号:US4849067A
公开(公告)日:1989-07-18
申请号:US74411
申请日:1987-07-16
申请人: Rhett B. Jucha , Cecil J. Davis , Duane E. Carter , Sue E. Crank , John I. Jones
发明人: Rhett B. Jucha , Cecil J. Davis , Duane E. Carter , Sue E. Crank , John I. Jones
IPC分类号: C23F4/00 , H01L21/3213
CPC分类号: C23F4/00 , H01L21/32136
摘要: A fluorine based metal etch chemistry, wherein an admixture of etch products (or species which are closely related to etch products) is added during the post etch stage, i.e. during the stage when the pattern has partially cleared by overetch is not yet completed, to maintain the balance of chemistries which provides selectivity and anisotropy. In a tungsten etch, WF.sub.6 is usefully added during the post etch period to provide this loading.
摘要翻译: 一种氟基金属蚀刻化学,其中在后蚀刻阶段,即在通过过蚀刻部分清除图案尚未完成的阶段期间添加蚀刻产物(或与蚀刻产物密切相关的物质)的混合物,至 维持提供选择性和各向异性的化学物质的平衡。 在钨蚀刻中,在后蚀刻期间有用地加入WF6以提供该负载。
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公开(公告)号:US4844773A
公开(公告)日:1989-07-04
申请号:US188138
申请日:1988-04-26
申请人: Lee M. Loewenstein , Cecil J. Davis
发明人: Lee M. Loewenstein , Cecil J. Davis
IPC分类号: H01L21/311
CPC分类号: H01L21/31116
摘要: A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated form a mixture of a source of Fluorine and Helium with the process chamber within the process module being generally at ambient temperatures.
摘要翻译: 在低压工艺模块中利用远程和原位等离子体的组合的多晶硅膜的蚀刻工艺和等离子体是由氟和氦源与处理模块内的处理室的混合物形成的,通常处于环境温度 温度。
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