公开(公告)号：US6099705A

公开(公告)日：2000-08-08

申请号：US391323

申请日：1999-09-08

申请人： Hsueh-Chung Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Hsueh-Chung Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： C23C14/35 ,  C23C14/38 ,  C23C14/40 ,  C23C14/42 ,  C23C14/44

CPC分类号： C23C14/35

摘要： A physical vapor deposition device comprises a vacuum chamber in which Ar ions are generated, a wafer chuck for holding a circular-shaped semiconductor wafer, a circular-shaped metal target above the wafer, an annular metal coil between the metal target and the wafer and made of the same material as the metal target, and a voltage controller for supplying voltage to the metal target, the wafer chuck and the metal coil. During a PVD processing, the voltage controller generates voltage biases between the metal target and the wafer chuck and between the metal coil and wafer chuck. That causes Ar ions to bombard the metal target to release metal atoms sputtering onto the center portion of the wafer, and causes Ar ions to bombard the metal coil to release the metal atoms sputtering onto the peripheral portion of the wafer so as to create a uniform metal layer on the wafer.

摘要翻译： 物理气相沉积装置包括其中产生Ar离子的真空室，用于保持圆形半导体晶片的晶片卡盘，晶片上方的圆形金属靶，金属靶和晶片之间的环形金属线圈，以及 由与金属靶相同的材料制成，以及用于向金属靶，晶片卡盘和金属线圈提供电压的电压控制器。 在PVD处理期间，电压控制器在金属靶和晶片卡盘之间以及金属线圈和晶片卡盘之间产生电压偏压。 这导致Ar离子轰击金属靶，释放金属原子溅射到晶片的中心部分，并导致Ar离子轰击金属线圈，以将金属原子溅射到晶片的周边部分，从而形成均匀的 晶圆上的金属层。

公开(公告)号：US6093089A

公开(公告)日：2000-07-25

申请号：US236522

申请日：1999-01-25

申请人： Hsueh-Chung Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Hsueh-Chung Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： B24B41/06 ,  B24B49/16 ,  B24B7/22

CPC分类号： B24B37/30 ,  B24B41/06 ,  B24B49/16

摘要： An apparatus for controlling a uniformity of a polished material is described. An air bag comprises a plurality of tubular rings. An air-bag manifold controller is connected to the tubular rings. The air-bag manifold controller controls inflation and deflation of the tubular rings in order to draw up the polished material and control pressure difference between different areas of the polished material.

摘要翻译： 描述了一种用于控制抛光材料的均匀性的装置。 气囊包括多个管状环。 气囊歧管控制器连接到管状环。 气囊歧管控制器控制管状环的膨胀和放气，以便画出抛光的材料并控制抛光材料的不同区域之间的压力差。

公开(公告)号：US6015755A

公开(公告)日：2000-01-18

申请号：US162576

申请日：1998-09-29

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L21/762 ,  H01L21/00

CPC分类号： H01L21/76229

摘要： A method for fabricating trench isolation structures using the reverse mask is described. The method of using a reverse mask to fabricate trench isolation structures includes providing a semiconductor substrate having a first trench and a second trench in the substrate. The first trench has a width smaller than a fixed value, while the second trench has a width larger than the fixed value, the fixed value being, for example, about 0.7 .mu.m. Thereafter, a conformal insulating layer is formed over the first trench and the second trench. Next, a reverse mask layer is formed over the conformal insulating layer, and then the reverse mask layer is patterned. The reverse mask layer is patterned selectively. For example, only the region directly above the second trench is covered by the reverse mask. The region directly above the first trench is exposed. Subsequently, using the patterned reverse mask layer as a mask, a portion of the conformal insulating layer is etched away forming a residual conformal insulating layer underneath the reverse mask layer. Thereafter, the reverse mask layer is removed exposing protruding insulating structures. Finally, the regions of the conformal insulating layer protruding above the semiconductor substrate are polished.

摘要翻译： 描述了使用反向掩模制造沟槽隔离结构的方法。 使用反向掩模制造沟槽隔离结构的方法包括提供在衬底中具有第一沟槽和第二沟槽的半导体衬底。 第一沟槽具有小于固定值的宽度，而第二沟槽的宽度大于固定值，固定值例如为约0.7μm。 此后，在第一沟槽和第二沟槽之上形成保形绝缘层。 接下来，在保形绝缘层上形成反向掩模层，然后对反向掩模层进行图案化。 反向掩模层被选择性地图案化。 例如，只有第二沟槽正上方的区域被反掩模覆盖。 暴露第一沟槽正上方的区域。 随后，使用图案化反向掩模层作为掩模，保护绝缘层的一部分被蚀刻掉，在反掩膜层下面形成残留的保形绝缘层。 此后，去除暴露的绝缘结构的反面掩模层。 最后，抛光在半导体衬底上突出的保形绝缘层的区域。

公开(公告)号：US5993647A

公开(公告)日：1999-11-30

申请号：US112996

申请日：1998-07-10

申请人： Chao-Yuan Huang ,  Peng-Yih Peng ,  Juan-Yuan Wu

发明人： Chao-Yuan Huang ,  Peng-Yih Peng ,  Juan-Yuan Wu

IPC分类号： B24B37/04 ,  B24B55/12 ,  B24B57/02 ,  B01D17/12 ,  B34B1/00

CPC分类号： B24B55/12 ,  B24B37/04 ,  B24B57/02 ,  Y10T137/85978

摘要： A slurry filtration system for supplying a slurry to a polisher to perform a chemical mechanical polishing process. The system comprises a first three-way valve, to receive the slurry supplied from an external system; a slurry pump, to control the slurry flowing from the first three-way valve, and to maintain a circulating state of the slurry within the circulating system after the chemical mechanical polishing process comes to a stop; a slurry filter, to filter a plurality of large size particles in the slurry pumped from the slurry pump; a second three-way valve, to supply the slurry flowing from the filter to the polisher; and a transportation pipe, connecting between the first and the second three-way valves to transport the slurry from the second three-way valve back to the first three-way valve when the polishing process has stopped.

摘要翻译： 一种浆料过滤系统，用于将浆料供应到抛光机以进行化学机械抛光工艺。 该系统包括第一三通阀，以接收从外部系统供应的浆料; 浆料泵，用于控制从第一三通阀流出的浆料，并且在化学机械抛光处理停止之后保持浆料在循环系统内的循环状态; 浆料过滤器，用于过滤从浆料泵泵送的浆料中的多个大粒子; 第二三通阀，用于供应从过滤器流到抛光机的浆料; 以及输送管，其连接在第一和第二三通阀之间，以在抛光处理停止时将浆料从第二三通阀返回到第一三通阀。

公开(公告)号：US5958795A

公开(公告)日：1999-09-28

申请号：US75597

申请日：1998-05-11

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L21/3105 ,  H01L21/762 ,  H01L21/463

CPC分类号： H01L21/31053 ,  H01L21/76229

摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation. A substrate having a plurality of active regions, including a large active region and a small active region, is provided. A silicon nitride layer is formed on the substrate. A shallow trench is formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trench is filled therewith. A partial reverse active mask is formed on the oxide layer, so that the oxide layer on a central part of the large active region is exposed. Whereas, the oxide layer on an edge part of the large active region and on the small active region are covered by the partial reverse active mask. The oxide layer is etched with the silicon nitride layer as a stop layer, using the partial reverse active mask as a mask. The oxide layer is planarized until the oxide layer within the shallow trench has a same level as the silicon nitride layer.

摘要翻译： 用于形成浅沟槽隔离的化学机械抛光方法。 提供具有多个有源区的基板，其包括大的有源区和小的有源区。 在衬底上形成氮化硅层。 在活性区域之间形成浅沟槽。 在衬底上形成氧化物层，以便填充浅沟槽。 在氧化物层上形成部分反向有源掩模，使大面积活性区域的中央部分的氧化物层露出。 而大的有源区域的边缘部分和小的有源区域上的氧化物层被部分反向有源掩模覆盖。 使用部分反向活性掩模作为掩模，用氮化硅层作为停止层蚀刻氧化物层。 氧化层被平坦化，直到浅沟槽内的氧化物层具有与氮化硅层相同的水平。