公开(公告)号：US5573334A

公开(公告)日：1996-11-12

申请号：US454762

申请日：1995-05-31

申请人： Roger N. Anderson

发明人： Roger N. Anderson

IPC分类号： B01F3/02 ,  B01F5/00 ,  B01F5/02 ,  H01L21/22 ,  B01F5/04

CPC分类号： B01F5/0256 ,  B01F5/0057

摘要： An apparatus and method for the turbulent mixing of gases are described. The invention has particular application when it is desired to produce a gas mixture including a very small quantity (ppm or less) of at least one component gas and/or wherein there is a substantial density difference between the component gases to be used to make up the gas mixture. The apparatus comprises: a tubular housing; at least two orifices or jets located near one end of the housing, through which gases to be mixed can enter the interior of the housing, the orifices or jets being oriented so that a first portion of gas flowing from a first orifice or jet will directly impact a second portion of gas flowing from a second orifice or jet, whereby frictional mixing of the gas components is achieved, further, the centerline of the first orifice or jet is offset from the centerline of the second, opposing orifice or jet, so as to produce a swirling action within the tubular interior of the gas mixer; and an exit opening at the opposite end of the tubular housing.

摘要翻译： 描述了用于气体湍流混合的装置和方法。 当希望产生包含非常少量（ppm或更少）至少一种组分气体的气体混合物和/或其中用于组成的组分气体之间存在实质密度差时，本发明具有特殊应用 气体混合物。 该装置包括：管状壳体; 位于壳体一端附近的至少两个孔或喷嘴，待混合的气体可以通过该孔或喷嘴进入壳体的内部，所述孔或射流被定向成使得从第一孔或射流流动的第一部分气体将直接 撞击从第二孔或射流流出的气体的第二部分，从而实现气体组分的摩擦混合，此外，第一孔或射流的中心线偏离第二相对的孔或射流的中心线，以便 以在气体混合器的管状内部产生旋动作用; 以及在管状壳体的相对端处的出口。

公开(公告)号：US5044943A

公开(公告)日：1991-09-03

申请号：US568008

申请日：1990-08-16

申请人： Russell Bowman ,  Roger N. Anderson

发明人： Russell Bowman ,  Roger N. Anderson

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  F27B17/00 ,  H01L21/31 ,  H01L21/67

CPC分类号： C30B31/14 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  F27B17/0025

摘要： An apparatus is described for processing semiconductor wafers for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor. The apparatus comprises a chamber, a circular susceptor in the chamber for supporting a semiconductor wafer thereon, heating means in the chamber beneath the susceptor, and support means for peripherally supporting the susceptor in the chamber comprising 3-6 spokes which are each connected at one end to a central hub which is coaxial with the axis of the circular susceptor, but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribution of the heat through the susceptor.

公开(公告)号：US4947682A

公开(公告)日：1990-08-14

申请号：US322790

申请日：1989-03-13

申请人： Roger N. Anderson ,  Colin F. Williams

发明人： Roger N. Anderson ,  Colin F. Williams

IPC分类号： E21B47/06 ,  G01N25/18 ,  G01V9/00

CPC分类号： E21B47/065 ,  G01N25/18 ,  G01V9/005

摘要： Oil and gas horizons in a wellbore are located by establishing from thermal logs thermal gradients for successive intervals free of drilling-induced thermal disturbances, identifying the mineral abundances surrounding the wellbore at each of said intervals, establishing ideal thermal conductivities for said mineral abundances based on assumptions that sand-rich formations have high thermal conductivities and are water-bearing and that shale-rich formations have low conductivities, determining an ideal heat flow at each interval by multiplying the thermal gradient at such interval by the ideal thermal conductivity of the mineral abundances at the interval, determining the average ideal heat flow for all of the intervals, and identifying the zones of the wellbore exhibiting anomalous ideal heat flows that are higher than the average heat flow.

摘要翻译： 井眼中的石油和天然气视野是通过从热原子热梯度建立连续的间隔，没有钻孔引起的热扰动，识别在每个间隔周围的井筒周围的矿物质丰度，建立基于以上的矿物丰度的理想热导率 富砂地层具有高导热性并且是含水的，并且富含页岩的地层具有低电导率的假设，通过将这种间隔的热梯度乘以矿物质丰度的理想热导率来确定每个间隔处的理想热流 以间隔确定所有间隔的平均理想热流，并且识别出高于平均热流的异常理想热流的井眼区域。

公开(公告)号：US4920918A

公开(公告)日：1990-05-01

申请号：US339784

申请日：1989-04-18

申请人： David V. Adams ,  Roger N. Anderson ,  Thomas E. Deacon

发明人： David V. Adams ,  Roger N. Anderson ,  Thomas E. Deacon

IPC分类号： F27B17/00 ,  C23C16/44 ,  C23C16/48 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324

CPC分类号： C23C16/481 ,  C23C16/44

摘要： A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

公开(公告)号：US4400411A

公开(公告)日：1983-08-23

申请号：US399568

申请日：1982-07-19

申请人： Han-Tzong Yuan ,  Roger N. Anderson

发明人： Han-Tzong Yuan ,  Roger N. Anderson

IPC分类号： H01L21/20 ,  H01L21/762 ,  B05D5/12 ,  B44C1/22 ,  C03C15/00 ,  H01L7/36

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76294 ,  Y10S148/026 ,  Y10S148/05

摘要： A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.

摘要翻译： 在衬底上形成三至五微米厚的厚氧化物层中形成硅外延填充袋的工艺。 通过等离子体蚀刻在厚氧化物层中选择性地形成口袋。 使用四氯化硅源填充口袋。