公开(公告)号：US07696477B2

公开(公告)日：2010-04-13

申请号：US11724409

申请日：2007-03-14

申请人： Mihail Sigalas ,  R. Stanley Williams ,  David A. Fattal ,  Shih-Yuan Wang ,  Raymond G. Beausoleil

发明人： Mihail Sigalas ,  R. Stanley Williams ,  David A. Fattal ,  Shih-Yuan Wang ,  Raymond G. Beausoleil

IPC分类号： G01N23/00

CPC分类号： G01N21/658 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/72 ,  Y10S977/723

摘要： In one aspect of the present invention, an electric-field-enhancement structure is disclosed. The electric-field-enhancement structure includes a substrate and an ordered arrangement of dielectric particles having at least two adjacent dielectric particles spaced from each other a controlled distance. The controlled distance is selected so that when a resonance mode is excited in each of the at least two adjacent dielectric particles responsive to excitation electromagnetic radiation, each of the resonance modes interacts with each other to result in an enhanced electric field between the at least two adjacent dielectric particles. Other aspects of the present invention are electric-field-enhancement apparatuses that utilize the described electric-field-enhancement structures, and methods of enhancing an electric field between adjacent dielectric particles.

摘要翻译： 在本发明的一个方面，公开了一种电场增强结构。 电场增强结构包括基底和具有至少两个相邻的电介质颗粒彼此间隔可控距离的介质颗粒的有序布置。 控制距离被选择为使得当谐振模式在响应于激发电磁辐射的至少两个相邻电介质颗粒中的每一个中被激发时，每个谐振模式彼此相互作用以在至少两个之间产生增强的电场 相邻的电介质颗粒。 本发明的其他方面是利用所述电场增强结构的电场增强装置以及增强相邻电介质颗粒之间的电场的方法。

公开(公告)号：US20090189145A1

公开(公告)日：2009-07-30

申请号：US12253152

申请日：2008-10-16

申请人： Shih-Yuan Wang ,  Nobuhiko Kobayashi ,  Michael Tan ,  R. Stanley Williams ,  Denny Houng

发明人： Shih-Yuan Wang ,  Nobuhiko Kobayashi ,  Michael Tan ,  R. Stanley Williams ,  Denny Houng

IPC分类号： H01L31/00 ,  H01L21/20

CPC分类号： H01L31/0384 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02664 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/105 ,  Y02E10/50

摘要： A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires.

摘要翻译： 光电检测器包括在第一和第二层之间建立的第一层，第二层和多个纳米线。 多个纳米线中的至少一些具有与多个纳米线中的至少一些其他纳米线的带隙不同的带隙。

公开(公告)号：US07560726B2

公开(公告)日：2009-07-14

申请号：US10364987

申请日：2003-02-11

申请人： Raymond G. Beausoleil ,  Adrian P. Kent ,  Philip J. Kuekes ,  William J. Munro ,  Timothy P. Spiller ,  R. Stanley Williams

发明人： Raymond G. Beausoleil ,  Adrian P. Kent ,  Philip J. Kuekes ,  William J. Munro ,  Timothy P. Spiller ,  R. Stanley Williams

IPC分类号： H01J40/14

CPC分类号： B82Y10/00 ,  G06N99/002

摘要： Quantum information processing structures and methods use photons and four-level matter systems in electromagnetically induced transparency (EIT) arrangements for one and two-qubit quantum gates, two-photon phase shifters, and Bell state measurement devices. For efficient coupling of the matter systems to the photons while decoupling the matter systems from the phonon bath, molecular cages or molecular tethers maintain the atoms within the electromagnetic field of the photon, e.g., in the evanescent field surrounding the core of an optical fiber carrying the photons. To reduce decoherence caused by spontaneous emissions, the matter systems can be embedded in photonic bandgap crystals or the matter systems can be selected to include metastable energy levels.

摘要翻译： 量子信息处理结构和方法使用光子和四级物质系统在一个和两个量子位量子门，双光子移相器和贝尔状态测量装置的电磁感应透明度（EIT）布置中。 为了将物质系统有效耦合到光子，同时将物质系统与声子浴解耦，分子笼或分子系链将原子保持在光子的电磁场内，例如在包含光纤的纤芯的周围的消逝场中 光子。 为了减少由自发辐射引起的去相干，物质系统可以嵌入光子带隙晶体中，或者可以选择物质系统来包括亚稳态能级。

公开(公告)号：US20080246106A1

公开(公告)日：2008-10-09

申请号：US11732549

申请日：2007-04-03

申请人： Raymond G. Beausoleil ,  Scott Corzine ,  Sean Spillane ,  Wei Wu ,  R. Stanley Williams

发明人： Raymond G. Beausoleil ,  Scott Corzine ,  Sean Spillane ,  Wei Wu ,  R. Stanley Williams

IPC分类号： H01L31/0232

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B6/12002 ,  G02B6/43 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer.

摘要翻译： 本发明的各种实施例涉及具有光子互连层的集成电路和用于制造集成电路的方法。 在本发明的一个实施例中，集成电路包括电子器件层和一个或多个光子互连层。 电子器件层包括一个或多个电子器件，并且电子器件层附着到中间层的表面。 光子互连层中的一个附着到中间层的相对表面，并且每个光子互连层具有与电子器件层的至少一个电子器件通信的至少一个光子器件。

公开(公告)号：US20080181558A1

公开(公告)日：2008-07-31

申请号：US11701314

申请日：2007-01-31

申请人： Peter G. Hartwell ,  Raymond Beausoleil ,  R. Stanley Williams ,  Duncan Stewart

发明人： Peter G. Hartwell ,  Raymond Beausoleil ,  R. Stanley Williams ,  Duncan Stewart

IPC分类号： G02B6/12 ,  H01L21/30

CPC分类号： G02B6/4201 ,  G02B6/43 ,  H01S5/02

摘要： One embodiment in accordance with the invention is an apparatus that can include an optical circuit wafer and an integrated circuit wafer. The optical circuit wafer and the integrated circuit wafer are bonded together by a wafer bonding process.

摘要翻译： 根据本发明的一个实施例是可以包括光电路晶片和集成电路晶片的装置。 光电晶片和集成电路晶片通过晶片接合工艺结合在一起。

公开(公告)号：US07087946B2

公开(公告)日：2006-08-08

申请号：US10697589

申请日：2003-10-30

申请人： Yong Chen ,  R. Stanley Williams

发明人： Yong Chen ,  R. Stanley Williams

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/3081 ,  B82Y10/00 ,  G11C2213/81 ,  H01L21/3083 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42312 ,  H01L29/66439 ,  Y10S438/945 ,  Y10S438/962 ,  Y10S977/888

摘要： A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.

摘要翻译： 一种用于形成第一组合物的第一和第二线性结构的方法，所述第一和第二线性结构垂直相交，在所述结构相交点处存在间隙。 线性结构构造在具有第一组成的可蚀刻晶体层上。 在该层上生长第二组合物的第一和第二自对准纳米线，并用作蚀刻该层的掩模。 自对准纳米线由相对于晶体层具有不对称晶格失配的材料构成。 该间隙足够小以允许一个结构用作晶体管的栅极，而另一个则形成晶体管的源极和漏极。 间隙可以用电可切换材料填充，从而将晶体管转换成存储单元。

公开(公告)号：US20060164635A1

公开(公告)日：2006-07-27

申请号：US11044421

申请日：2005-01-27

申请人： M. Saif Islam ,  Shih-Yuan Wang ,  Wei Wu ,  Zhiyong Li ,  R. Stanley Williams

发明人： M. Saif Islam ,  Shih-Yuan Wang ,  Wei Wu ,  Zhiyong Li ,  R. Stanley Williams

IPC分类号： G01J3/44 ,  G01N21/65

CPC分类号： G01N21/658 ,  G01N2201/0873

摘要： Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.

公开(公告)号：US07050659B1

公开(公告)日：2006-05-23

申请号：US11096670

申请日：2005-03-31

申请人： R. Stanley Williams ,  Raymond G. Beausoleil ,  Wei Wu ,  Zhiyong Li ,  Philip J. Kuekes

发明人： R. Stanley Williams ,  Raymond G. Beausoleil ,  Wei Wu ,  Zhiyong Li ,  Philip J. Kuekes

IPC分类号： G02F1/295

CPC分类号： G02F1/3511 ,  G02F1/0541 ,  G02F1/29 ,  G02F1/365 ,  G02F2202/13 ,  G02F2202/32

摘要： Controlling the propagation of electromagnetic radiation is described. A photonic bandgap medium is placed in the path of the electromagnetic radiation, the photonic bandgap medium comprising a photorefractive material. Control radiation is projected onto a surface of the photonic bandgap medium. The control radiation spatially varies a refractive index of the photorefractive material to control propagation of the electromagnetic radiation through the photonic bandgap medium.

摘要翻译： 描述控制电磁辐射的传播。 光子带隙介质放置在电磁辐射的路径中，光子带隙介质包括光折射材料。 控制辐射投影到光子带隙介质的表面上。 控制辐射在空间上改变光折射材料的折射率，以控制通过光子带隙介质的电磁辐射的传播。

公开(公告)号：US07030408B1

公开(公告)日：2006-04-18

申请号：US09699080

申请日：2000-10-26

申请人： Philip J. Kuekes ,  R. Stanley Williams

发明人： Philip J. Kuekes ,  R. Stanley Williams

IPC分类号： H01L35/24

CPC分类号： H01L27/285 ,  B82Y10/00 ,  B82Y15/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C13/02 ,  G11C2213/17 ,  G11C2213/77 ,  G11C2213/81 ,  H01L29/167 ,  H01L29/73 ,  H01L51/0595 ,  Y10S977/762 ,  Y10S977/936

摘要： Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed. Analogously, one wire may comprise doped semiconductor, such as silicon, and the other wire a metal, the doped silicon wire forming the source and drain and the metal wire forming the gate by modulation doping on the doped silicon wire where the wires cross, between the source and drain, to form a field effect transistor. Both P-channel and N-channel FETs may be formed. The construction of both bipolar transistors and FETs on a nanometer scale, which are self-aligned and modulation-doped, is thereby enabled.

公开(公告)号：US07009201B2

公开(公告)日：2006-03-07

申请号：US10703266

申请日：2003-11-07

申请人： Pavel Kornilovich ,  Alexendre M. Bratkovski ,  Shun-Chi Chang ,  R. Stanley Williams

发明人： Pavel Kornilovich ,  Alexendre M. Bratkovski ,  Shun-Chi Chang ,  R. Stanley Williams

IPC分类号： H01L51/00

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  H01L51/005 ,  Y10S977/70 ,  Y10S977/932 ,  Y10S977/936

摘要： A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula: CL-IL-A-IR-CR where A is a “conducting” moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an “insulating” moiety (with a relatively wide HOMO-LUMO gap), CL is a connecting group for attachment to a first electrode, and CR is a connecting group for attachment to a second electrode. Also, a low-forward-voltage rectifying molecular rectifier is provided, comprising the molecular species attached between the two electrodes. The present teachings provide a set of design rules to build single-molecule rectifying diodes that operate at low forward and large reverse voltages. Such single-molecule rectifying diodes are useful in a variety of nano-scale applications.

摘要翻译： 提供具有低正向电压整流特性的单一分子种类。 分子种类由以下公式表示：<？in-line-formula description =“In-line Formulas”end =“lead”？> CL-IL-A-IR-CR <？in-line-formula description =“ 其中A是“导电”部分（具有较窄的HOMO-LUMO间隙），IL和IR各自为“绝缘”部分（具有较宽的HOMO-LUMO间隙 ）中，CL是用于连接到第一电极的连接组，CR是连接到第二电极的连接组。 此外，提供了一种低电压整流分子整流器，其包括附着在两个电极之间的分子种类。 本教导提供了一组设计规则来构建在低正向和反向电压较低的情况下工作的单分子整流二极管。 这种单分子整流二极管可用于各种纳米级应用。