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    Multilayer image sensor pixel structure for reducing crosstalk
    62.
    发明授权
    Multilayer image sensor pixel structure for reducing crosstalk 有权
    用于减少串扰的多层图像传感器像素结构

    公开(公告)号：US07875918B2

    公开(公告)日：2011-01-25

    申请号：US12430006

    申请日：2009-04-24

    申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

    发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC分类号： H01L31/062

    CPC分类号： H01L27/1463 ,  H01L27/14601

    摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

    摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

    MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK
    63.
    发明申请
    MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK 有权
    用于减少CROSSTALK的多层图像传感器像素结构

    公开(公告)号：US20100271524A1

    公开(公告)日：2010-10-28

    申请号：US12430006

    申请日：2009-04-24

    申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

    发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/14601

    摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

    摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

    BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR
    64.
    发明申请
    BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR 有权
    背景照明成像传感器与垂直像素传感器

    公开(公告)号：US20090200626A1

    公开(公告)日：2009-08-13

    申请号：US12260019

    申请日：2008-10-28

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

    摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

    Black reference pixel for backside illuminated image sensor
    65.
    发明授权
    Black reference pixel for backside illuminated image sensor 有权

    公开(公告)号：US08482639B2

    公开(公告)日：2013-07-09

    申请号：US12028590

    申请日：2008-02-08

    申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

    发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

    IPC分类号： H04N9/64

    CPC分类号： H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    摘要： An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal.

    Image sensor having supplemental capacitive coupling node
    66.
    发明授权
    Image sensor having supplemental capacitive coupling node 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US08426796B2

    公开(公告)日：2013-04-23

    申请号：US13619879

    申请日：2012-09-14

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC分类号： H01L27/146

    CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.

    摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和控制电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。 控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

    Image sensor having supplemental capacitive coupling node
    68.
    发明授权
    Image sensor having supplemental capacitive coupling node 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US08294077B2

    公开(公告)日：2012-10-23

    申请号：US12972188

    申请日：2010-12-17

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC分类号： H01L27/146

    CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.

    摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。 在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。

    Black reference pixel for backside illuminated image sensor
    69.
    发明申请
    Black reference pixel for backside illuminated image sensor 有权
    背面照明图像传感器的黑色参考像素

    公开(公告)号：US20090201393A1

    公开(公告)日：2009-08-13

    申请号：US12028590

    申请日：2008-02-08

    申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

    发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

    IPC分类号： H04N5/225 ,  H04N9/64 ,  H04N5/16 ,  H04N5/18

    CPC分类号： H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    摘要： An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal.

    摘要翻译： 成像传感器像素阵列包括半导体衬底，多个有源像素和至少一个黑色参考像素。 多个有源像素设置在用于捕获图像的半导体衬底中。 每个有源像素包括用于接收包括用于累积图像电荷的p-n结的光的第一区域和耦合到第一区域的有源像素电路以读出图像电荷。 黑色参考像素也设置在半导体衬底内，用于产生黑色电平参考值。 黑参考像素包括用于接收没有p-n结的光的第二区域和耦合到没有p-n结的光电二极管区域的黑色像素电路以读出黑电平参考信号。