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    METHOD FOR FABRICATING BACK END OF THE LINE STRUCTURES WITH LINER AND SEED MATERIALS
    61.
    发明申请
    METHOD FOR FABRICATING BACK END OF THE LINE STRUCTURES WITH LINER AND SEED MATERIALS 失效
    用衬里和种子材料制作线结构的后端的方法

    公开(公告)号：US20080242082A1

    公开(公告)日：2008-10-02

    申请号：US12137875

    申请日：2008-06-12

    申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

    发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry A. Spooner

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76846 ,  H01L21/76865

    摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.

    摘要翻译： 用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。 贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。 可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。

    DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM
    62.
    发明申请
    DENSIFYING SURFACE OF POROUS DIELECTRIC LAYER USING GAS CLUSTER ION BEAM 审中-公开
    使用气体离子束对多孔介质层的表面进行测量

    公开(公告)号：US20080090402A1

    公开(公告)日：2008-04-17

    申请号：US11536893

    申请日：2006-09-29

    申请人： Griselda Bonilla ,  Shyng-Tsong Chen ,  John A. Fitzsimmons ,  Sanjay Mehta ,  Shom Ponoth

    发明人： Griselda Bonilla ,  Shyng-Tsong Chen ,  John A. Fitzsimmons ,  Sanjay Mehta ,  Shom Ponoth

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76825 ,  H01J2237/0812 ,  H01L21/76883

    摘要： A method of fabricating and a structure of an integrated circuit (IC) incorporating a porous dielectric layer are disclosed. A metal line is formed in the porous dielectric layer. A gas cluster ion beam process is applied to the porous dielectric layer so that an upper portion of the dielectric layer is densified to be not porous or non-interconnected low porous, while a lower portion of the porous dielectric layer still maintains its ultra-low dielectric constant after the gas cluster ion beam process.

    摘要翻译： 公开了一种制造方法和结合有多孔介电层的集成电路（IC）的结构。 在多孔介电层中形成金属线。 将气体簇离子束工艺应用于多孔介电层，使得电介质层的上部被致密化为不是多孔的或不互连的低多孔，而多孔介电层的下部仍保持其超低 气体离子束过程后的介电常数。

    METHOD FOR FABRICATING BACK END OF THE LINE STRUCTURES WITH LINER AND SEED MATERIALS
    63.
    发明申请
    METHOD FOR FABRICATING BACK END OF THE LINE STRUCTURES WITH LINER AND SEED MATERIALS 有权
    用衬里和种子材料制作线结构的后端的方法

    公开(公告)号：US20070246792A1

    公开(公告)日：2007-10-25

    申请号：US11380074

    申请日：2006-04-25

    申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry Spooner

    发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Shom Ponoth ,  Terry Spooner

    IPC分类号： H01L29/00 ,  H01L21/4763

    CPC分类号： H01L21/76846 ,  H01L21/76865

    摘要： A sputter-etching method employed to achieve a thinned down noble metal liner layer deposited on the surface or field of an intermediate back end of the line (BEOL) interconnect structure. The noble metal liner layer is substantially thinned down to a point where the effect of the noble metal has no significant effect in the chemical-mechanical polishing (CMP) process. The noble metal liner layer may be completely removed by sputter etching to facilitate effective planarization by chemical-mechanical polishing to take place.

    摘要翻译： 用于实现沉积在线（BEOL）互连结构的中间后端的表面或场上的减薄的贵金属衬里层的溅射蚀刻方法。 贵金属衬里层基本上变薄到贵金属的作用在化学机械抛光（CMP）工艺中没有显着影响的程度。 可以通过溅射蚀刻完全去除贵金属衬里层，以便通过化学机械抛光发生有效的平坦化。

    METHOD OF REPAIRING PROCESS INDUCED DIELECTRIC DAMAGE BY THE USE OF GCIB SURFACE TREATMENT USING GAS CLUSTERS OF ORGANIC MOLECULAR SPECIES
    64.
    发明申请
    METHOD OF REPAIRING PROCESS INDUCED DIELECTRIC DAMAGE BY THE USE OF GCIB SURFACE TREATMENT USING GAS CLUSTERS OF ORGANIC MOLECULAR SPECIES 有权
    通过使用有机分子物种的气体组合使用GCIB表面处理来修复过程诱导的电介质损伤的方法

    公开(公告)号：US20070224824A1

    公开(公告)日：2007-09-27

    申请号：US11609040

    申请日：2006-12-11

    申请人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    发明人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105 ,  H01L21/31155 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

    摘要： When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.

    摘要翻译： 当互连结构构建在多孔超低k（ULK）材料上时，沟槽和/或通孔的底部和/或侧壁通常被以下金属化或清洁工艺损坏，这可能适合于较高的介电材料。 本发明的实施例可以提供一种通过在层间电介质（ILD）材料上形成互连结构来修复工艺引起的介电损伤的方法。 该方法包括处理ILD材料的暴露区域以产生富含碳的区域，以及使富含碳的区域金属化。 一个实施例包括通过使用通过包括直链或支链，脂族或芳族烃的气体产生的气体簇离子束（GCIB）照射暴露区域来向ILD材料的暴露的侧壁区域提供处理以产生富碳区域 ，并且富含碳的区域金属化。

    SURFACE TREATMENT OF POST-RIE-DAMAGED P-OSG AND OTHER DAMAGED MATERIALS
    65.
    发明申请
    SURFACE TREATMENT OF POST-RIE-DAMAGED P-OSG AND OTHER DAMAGED MATERIALS 审中-公开
    后置损伤的P-OSG和其他损伤材料的表面处理

    公开(公告)号：US20060128163A1

    公开(公告)日：2006-06-15

    申请号：US10905065

    申请日：2004-12-14

    申请人： Shyng-Tsong Chen ,  Kaushik Kumar ,  Kelly Malone

    发明人： Shyng-Tsong Chen ,  Kaushik Kumar ,  Kelly Malone

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76802 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/76831

    摘要： Damaged porous OSG layers and other damage may be chemically healed. Chemical healing is particularly advantageous in a porous OSG layer in a sub 90 nm ILD. For example, chemical healing may be by reacting the damage with an adhesion promoter having a “k” value comparable to the “k” value desired in the damaged material. Damaged porous OSG layers (which are hydrophilic) may be manipulated to prevent them from allowing moisture to reach copper lines. Undesirable copper out-diffusion can be controlled in ILDs having porous OSG geometry.

    摘要翻译： 受损的多孔OSG层和其他损伤可以化学愈合。 在90nm以下的ILD中，化学愈合特别有利于多孔OSG层。 例如，化学愈合可以通过使损伤与具有与损伤材料中所需的“k”值相当的“k”值的粘合促进剂反应。 可以操纵损坏的多孔OSG层（其是亲水的）以防止它们使水分达到铜线。 可以在具有多孔OSG几何形状的ILD中控制不希望的铜外扩散。