公开(公告)号：US07863805B2

公开(公告)日：2011-01-04

申请号：US11665472

申请日：2006-06-19

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/02 ,  H01J9/02 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.

摘要翻译： 可以通过使用金刚石和使用它们的电子装置来提供电子发射阴极，具有高亮度和窄能量宽度的电子发射源。 金刚石电子放电阴极至少在其一部分具有单晶金刚石。 金刚石电子发射阴极具有包括锐化部分和加热部分的柱状。 锐化部分具有电子发射部分。 电子发射部分和加热部分由金刚石半导体形成，其由含有2×10 15 cm -3的p型杂质或以上的p型半导体形成。 电子发射部分具有半导体。 在电子发射阴极的表面上形成金属层。 金属层至少存在于加热部的一部分。 从电子发射部到最接近金属层末端的位置的距离为500μm。 一对电流引入端子向加热部分供电以加热加热部分。 引入的电子的一部分从电子发射部分发射。

公开(公告)号：US07615203B2

公开(公告)日：2009-11-10

申请号：US10584927

申请日：2005-05-26

申请人： Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

IPC分类号： C30B23/00 ,  C30B17/00 ,  B01J3/06 ,  B32B9/00 ,  D06N7/04 ,  H05H1/24 ,  H01L31/0312

CPC分类号： C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  Y10T428/24355

摘要： A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 μm of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.

摘要翻译： 通过气相合成生长的单晶金刚石，其中当被认为是两个相互垂直的线偏振光的合成的线偏振光照射一个主表面时，两个相互垂直的线偏振光束离开另一个的相位差 在整个晶体上，相对侧的主表面最大为每100微米的晶体厚度不大于50nm。 这种单晶金刚石迄今为止不具有大尺寸和高质量，并且具有在半导体器件基板中非常需要的特性，并且被应用于需要低应变的光学部件。

公开(公告)号：US20080311023A1

公开(公告)日：2008-12-18

申请号：US10584927

申请日：2005-05-26

申请人： Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

IPC分类号： C01B31/06

CPC分类号： C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  Y10T428/24355

摘要： A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 μm of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.

摘要翻译： 通过气相合成生长的单晶金刚石，其中当被认为是两个相互垂直的线偏振光的合成的线偏振光照射一个主表面时，两个相互垂直的线偏振光束离开另一个的相位差 在整个晶体上，相对侧的主表面最大为每100微米的晶体厚度不大于50nm。 这种单晶金刚石迄今为止不具有大尺寸和高质量，并且具有在半导体器件基板中非常需要的特性，并且被应用于需要低应变的光学部件。

公开(公告)号：US20080290497A1

公开(公告)日：2008-11-27

申请号：US11630025

申请日：2006-07-13

申请人： Yasuhiro Sugaya ,  Toshiyuki Asahi ,  Katsumasa Miki ,  Yoshiyuki Yamamoto ,  Hiroyuki Ishitomi ,  Tsuyoshi Himori

发明人： Yasuhiro Sugaya ,  Toshiyuki Asahi ,  Katsumasa Miki ,  Yoshiyuki Yamamoto ,  Hiroyuki Ishitomi ,  Tsuyoshi Himori

IPC分类号： H01L23/12 ,  H05K7/02

CPC分类号： H05K1/162 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/66 ,  H01L24/48 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H05K3/385 ,  H05K3/4641 ,  H05K2201/0329 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0315 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/0401 ,  H01L2924/00012

摘要： The mounting board has a capacitor-forming sheet made from a valve metal, first and second board-forming structures, first and second electrodes, an extractor electrode, and a conductive polymer. The capacitor-forming sheet has an inner layer and a rough oxide film on at least one face of the inner layer. The first board-forming structure is provided on a face of the capacitor-forming sheet, and the second board-forming structure is provided on another face thereof on a side opposite to the first one. The first and second electrodes are isolated to each other and provided on a surface of at least one of the first and second board-forming structures. The extractor electrode and conductive polymer are provided inside at least one of the first and second board-forming structures. The extractor electrode electrically-connects the first electrode with the inner layer. The conductive polymer electrically-connects the second electrode with the rough oxide film.

摘要翻译： 安装板具有由阀金属制成的电容器形成片，第一和第二板形成结构，第一和第二电极，提取器电极和导电聚合物。 电容器形成片材在内层的至少一个面上具有内层和粗糙的氧化膜。 第一板形成结构设置在电容器形成片的表面上，并且第二板形成结构在与第一板形成结构相对的一侧的另一个表面上设置。 第一和第二电极彼此隔离并设置在第一和第二板形成结构中的至少一个的表面上。 提取器电极和导电聚合物设置在第一和第二板形成结构中的至少一个中。 提取器电极将第一电极与内层电连接。 导电聚合物将第二电极与粗氧化物膜电连接。

公开(公告)号：US07407549B2

公开(公告)日：2008-08-05

申请号：US10980152

申请日：2004-11-04

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C30B29/02

CPC分类号： C30B29/04 ,  C30B25/20

摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.

摘要翻译： 一种金刚石单晶复合基板，其由具有均匀平面取向的多个金刚石单晶基板构成，并且通过气相合成在其上生长金刚石单晶整体并入，其中主体的平面取向偏离 从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度，排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度，当金刚石单晶基板并排配置时，所述一个金刚石单晶基板配置在最外周部，并且配置成使得在所述一个的主平面中的<100>方向 衬底在所设置的衬底的外周方向上面对，然后通过气相合成生长金刚石单晶 使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶，以实现整体的整合。

公开(公告)号：US07395190B2

公开(公告)日：2008-07-01

申请号：US10073008

申请日：2002-02-12

申请人： Masayuki Hariya ,  Yoshimitsu Hiro ,  Yoshiyuki Yamamoto ,  Hiromitsu Tokisue

发明人： Masayuki Hariya ,  Yoshimitsu Hiro ,  Yoshiyuki Yamamoto ,  Hiromitsu Tokisue

IPC分类号： G06G7/64

CPC分类号： G06F17/5018

摘要： The present invention provides an analytical model preparing apparatus which reduces the user's labor of template selecting operation by selecting and presenting an appropriate template from among a plurality of already prepared templates. The analytical model preparing apparatus of the invention comprises means for entering a shape model to be analyzed; a database which associates at least one already prepared shape model with the analytical model prepared for such an already prepared shape model, and registers the same; means for collating the above-mentioned shape model to be analyzed with at least one already prepared shape model; analytical model preparing means for preparing at least one analytical model corresponding to the shape model to be analyzed, by use of analytical model preparing information prepared for the above-mentioned already prepared shape model, in accordance with the result of collation; and mesh quality evaluating means for calculating a mesh quality evaluation value for the analytical model corresponding to at least one prepared shape model to be analyzed.

摘要翻译： 本发明提供了一种分析模型制备装置，其通过从多个已经准备好的模板中选择和呈现适当的模板来减少用户对模板选择操作的劳动。 本发明的分析模型制备装置包括用于输入要分析的形状模型的装置; 将至少一个已经准备好的形状模型与为这种已经准备好的形状模型准备的分析模型相关联的数据库，并将其注册; 用于将上述具有至少一个已经准备好的形状模型进行分析的形状模型整理的装置; 分析模型制备装置，用于根据对照结果，通过使用为上述已经制备的形状模型制备的准备信息的分析模型来制备对应于待分析的形状模型的至少一个分析模型; 以及用于计算与要分析的至少一个准备形状模型相对应的分析模型的网格质量评估值的网格质量评估装置。

公开(公告)号：US07294587B2

公开(公告)日：2007-11-13

申请号：US11126029

申请日：2005-05-10

申请人： Toshiyuki Asahi ,  Yasuhiro Sugaya ,  Shingo Komatsu ,  Yoshiyuki Yamamoto ,  Seiichi Nakatani

发明人： Toshiyuki Asahi ,  Yasuhiro Sugaya ,  Shingo Komatsu ,  Yoshiyuki Yamamoto ,  Seiichi Nakatani

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L25/50 ,  H01L21/6835 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/82047 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/186 ,  H05K3/20 ,  H05K3/4069 ,  H05K3/4602 ,  H05K3/4652 ,  H05K2201/10378 ,  H05K2201/10636 ,  H05K2203/061 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2224/29075

摘要： A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.

摘要翻译： 组件内置模块包括绝缘层，与绝缘层的两个表面一体化的布线，连接布线的通孔以及嵌入在绝缘层内部的一个或多个选自电子部件和半导体的部件。 在该模块中，布线板的表面上形成有布线中的至少一方，嵌入绝缘层内的部件安装在布线基板上并与嵌入板一体化。 这种构造允许诸如半导体的部件在嵌入之前进行安装检查和性能检查。 结果，可以提高模块的产量。 此外，由于部件与布线板集成并嵌入，因此可以提高其强度。

公开(公告)号：US07157789B2

公开(公告)日：2007-01-02

申请号：US11136110

申请日：2005-05-24

申请人： Koichi Hirano ,  Yoshiyuki Yamamoto ,  Seiichi Nakatani ,  Toshiyuki Kojima ,  Shingo Komatsu

发明人： Koichi Hirano ,  Yoshiyuki Yamamoto ,  Seiichi Nakatani ,  Toshiyuki Kojima ,  Shingo Komatsu

IPC分类号： H01L23/552

CPC分类号： H01L25/0657 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/82 ,  H01L24/86 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24145 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01064 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/05599

摘要： An example of a semiconductor device of the present invention includes a first semiconductor element including a first element body portion and a first element electrode that is provided on a first face of the first element body portion; a wiring board including an insulating substrate and a first wiring layer that is formed on one principal face of the insulating substrate, the wiring board being disposed such that the one principal face of the wiring board is opposed to a second face of the first element body portion; a first film that covers at least a portion of a face of the first semiconductor element that includes the surface of the first element electrode and at least a portion of a face on the first semiconductor element side of the wiring board; and a second wiring layer that is formed on a face on the wiring board side of the first film and that includes a first conductor having first and second ends. The first end of the first conductor is bonded to the first element electrode, and the second end of the first conductor is bonded to a portion of the first wiring layer.

摘要翻译： 本发明的半导体器件的一个例子包括：第一半导体元件，包括第一元件主体部分和设置在第一元件主体部分的第一面上的第一元件电极; 布线板，包括绝缘基板和形成在所述绝缘基板的一个主面上的第一布线层，所述布线板布置成使得所述布线板的所述一个主面与所述第一元件体的第二面相对 一部分; 第一膜，其覆盖包括第一元件电极的表面和布线板的第一半导体元件侧的面的至少一部分的第一半导体元件的表面的至少一部分; 以及第二布线层，其形成在第一膜的布线板侧的面上，并且包括具有第一端和第二端的第一导体。 第一导体的第一端接合到第一元件电极，第一导体的第二端接合到第一布线层的一部分。

公开(公告)号：US20060231015A1

公开(公告)日：2006-10-19

申请号：US11402062

申请日：2006-04-12

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/04 ,  C30B25/20

摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.

摘要翻译： 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学组件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为 在整个单晶金刚石上，相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟最大值不超过每100μm厚度100mum的最大50μm，并且还有一种用于制造金刚石的方法 。

公开(公告)号：US06641861B2

公开(公告)日：2003-11-04

申请号：US09962578

申请日：2001-09-24

申请人： Hirohisa Saito ,  Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

发明人： Hirohisa Saito ,  Yoshiyuki Yamamoto ,  Kiichi Meguro ,  Takahiro Imai

IPC分类号： B05D512

CPC分类号： H01L23/3736 ,  H01L21/4871 ,  H01L23/142 ,  H01L23/3732 ,  H01L23/49562 ,  H01L2924/0002 ,  H01L2924/1423 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/249961 ,  Y10T428/249967 ,  Y10T428/249988 ,  Y10T428/24999 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31678 ,  H01L2924/00

摘要： A method of fabricating a heatsink including a substrate of a sintered compact containing Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence, involves immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.

摘要翻译： 一种制造包括含有Cu和W的烧结体的衬底的散热体的方法以及形成在衬底表面上的良好粘附性的薄金刚石膜层包括将衬底浸入酸中以降低表面区域的Cu含量 并在该表面区域粗化暴露的W，然后通过气相合成在该表面区域上形成薄金刚石膜层。 或者，在多孔体基板的表面上形成薄金刚石膜层，然后用Cu填充多孔体基板的孔。