摘要:
A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.
摘要:
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译:半导体器件具有:形成在导电基板上并由高电阻的Al x Ga 1-x N构成的缓冲层; 形成在缓冲层上的元件形成层,具有沟道层,由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极,漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中,因此电连接到导电基板。
摘要:
An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit transistors, each including a base, an emitter and a collector. In the planar layout of the device, a position of a first one of the transistors is shifted from a position of a second one of the transistors in a direction in which the banks extend. The first and second transistors belong to first and second ones of the banks, respectively, which are adjacent to each other. The second transistor is closer to the first transistor than any other transistor in the second bank.
摘要:
A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.
摘要:
There is provided a normally-off type transistor made of a nitride semiconductor. The transistor includes; an undoped GaN layer which forms a channel region; an undoped Al0.2Ga0.8N layer which is formed on the undoped GaN layer and has a band gap larger than that of the undoped GaN layer; a p-type Al0.2Ga0.8N control layer which is formed on the undoped Al0.2Ga0.8N layer, has a p-type conductivity and forms a control region; an Ni gate electrode which contacts with the p-type Al0.2Ga0.8N control layer; a Ti/Al source electrode and a Ti/Al drain electrode which are formed beside the p-type Al0.2Ga0.8N control layer; and an Ni ohmic electrode which is connected to the undoped GaN layer and serves as a hole absorbing electrode. With this transistor, it is possible to achieve a large-current operation and a high switching speed.
摘要:
The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.
摘要:
A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitive film is provided on the extrinsic base region using the same semiconductor material as that for the second semiconductor layer. A base electrode is formed on the first semiconductor layer to cover the capacitive film and the extrinsic base region.
摘要:
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译:半导体器件具有:形成在导电基板上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层,具有沟道层,由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极,漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中,因此电连接到导电基板。
摘要:
A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要:
An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.