公开(公告)号：US06893907B2

公开(公告)日：2005-05-17

申请号：US10786410

申请日：2004-02-24

申请人： Dan Maydan ,  Randir P. S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Dan Maydan ,  Randir P. S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/321 ,  H01J2237/0825 ,  Y10S438/977

摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

摘要翻译： 在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压， 将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心 并且在硅表面层中具有有限的氧浓度。 然后减小硅表面层中的氧浓度以允许外延硅沉积。

公开(公告)号：US06494986B1

公开(公告)日：2002-12-17

申请号：US09636435

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

发明人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC分类号： H05H100

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second pairs of openings therethrough near generally opposite sides of the workpiece support. At least first and second hollow conduits are connected to respective pairs of the openings to provide at least first and second closed torroidal paths through the respective conduits and extending between respective pairs of the openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal paths. Coil antennas are coupled to RF power sources and inductively coupled to the interior of the hollow conduits and capable of maintaining a plasma in the torroidal paths.

摘要翻译： 一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的面向所述外壳的上部的工件支撑件，所述外壳具有穿过所述工件支撑件的大体相对侧的至少第一和第二对开口 。 至少第一和第二空心管道连接到相应的一对开口，以提供至少第一和第二封闭的环形路径穿过相应的导管并且在相应的成对开口之间跨越晶片表面延伸。 工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。 线圈天线​​耦合到RF功率源，并且感应耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

公开(公告)号：US06468388B1

公开(公告)日：2002-10-22

申请号：US09636434

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

发明人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC分类号： H01L2100

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween. A hollow conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of the conduit sharing the interior environment. The conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.

摘要翻译： 限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布 板和衬底支撑件限定其间的衬底处理区域。 中空导管，其各自的端部通向气体分配板的相对侧的基板处理区域，导管的内部共享内部环境。 所述管道适于接受RF管道内的处理气体的RF场辐射，以在围绕管道内部延伸并且在腔室内部环境内的衬底处理区域周围延伸的路径中维持等离子体。

公开(公告)号：US07695590B2

公开(公告)日：2010-04-13

申请号：US10873463

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/505 ,  C23C16/48 ,  C23F1/12 ,  H01L21/3065 ,  C23C16/06

CPC分类号： H01J37/32449 ,  C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357

摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a factor of 4. The grid potential source can be capable of applying different voltages to different ones of the grids.

摘要翻译： 一种用于加工半导体工件的等离子体反应器包括反应室和一组多个并联离子淋浴网格，其将腔室分成上部离子产生区域和下部反应器区域，每个离子淋浴器网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 工艺区域中的工件支撑面向最下面的离子淋浴网格。 反应物种源向离子产生区域提供化学气相沉积前体物质。 反应器还包括耦合到反应器区域的真空泵，用于在离子产生区域中产生等离子体的等离子体源功率施加器和耦合到该组离子淋浴栅格的栅极电位源。 通过至少一些离子淋浴栅格的孔口具有足以将反应器区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持压力降 离子产生和反应器区域至少约为4倍。电网电势源能够对不同的电网施加不同的电压。

公开(公告)号：US07552736B2

公开(公告)日：2009-06-30

申请号：US11685775

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US20080179290A1

公开(公告)日：2008-07-31

申请号：US11685915

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.

摘要翻译： 工件被支撑在真空室的背面，同时留下工件的后侧的周边环形部分露出。 该过程首先在低于约200℃的温度下开始增加工件的温度。工件的边缘被限制以便在边缘处建立约1％直径的间隙， 间隙对应于包含前侧的上处理区域和包含背面的下处理区域之间的边界。 在工件温度超过约200℃之前，使用在较低工艺区域中的含有聚合物蚀刻物质的第一等离子体来去除背面聚合物。 在工件温度达到约300摄氏度之后，使用在上工艺区域中含有光刻带材料的第二等离子体的副产品从工件正面剥离光致抗蚀剂。

公开(公告)号：US20080179288A1

公开(公告)日：2008-07-31

申请号：US11685767

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/0206 ,  H01L21/67115 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a lower external chamber from a polymer etch precursor gas, and an etchant by-product is introduced from the first plasma into the lower process zone. A second plasma is generated in an upper external plasma chamber from a precursor gas of a scavenger of the etchant by-product, and scavenger species are introduced from the second plasma into the upper process zone.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在来自聚合物蚀刻前体气体的下部外部室中产生第一等离子体，并且将蚀刻剂副产物从第一等离子体引入下部工艺区域。 在来自蚀刻剂副产物的清除剂的前体气体的上部外部等离子体室中产生第二等离子体，并且清除剂物质从第二等离子体引入上部工艺区域。

公开(公告)号：US20080179009A1

公开(公告)日：2008-07-31

申请号：US11685775

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： H01L21/306

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. The reactor further includes a local plasma-generating chamber and a nozzle disposed on a side of the workpiece support apparatus that is opposite a support surface of the workpiece support apparatus where the workpiece is to reside, the nozzle coupled to receive plasma from the local plasma-generating chamber. The nozzle is directed at a target area of the annular periphery so as to direct a plasma stream at the workpiece backside. A supply of a polymer etch precursor gas is coupled to the local plasma-generating chamber. A rotation actuator rotates the workpiece support apparatus relative to the nozzle.

摘要翻译： 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面对天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间划分室的边界 区。 真空泵联接到下部处理区。 反应器还包括局部等离子体产生室和设置在工件支撑装置的与工件所在的工件支撑装置的支撑表面相对的一侧的喷嘴，喷嘴被连接以接收来自局部等离子体的等离子体 生成室。 喷嘴指向环形周边的目标区域，以便在工件背面引导等离子体流。 聚合物蚀刻前体气体的供应物连接到局部等离子体产生室。 旋转致动器相对于喷嘴旋转工件支撑装置。

公开(公告)号：US20080178913A1

公开(公告)日：2008-07-31

申请号：US11685902

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorow ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： B08B7/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US07393765B2

公开(公告)日：2008-07-01

申请号：US11788523

申请日：2007-04-19

申请人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/44 ,  H01L21/425

CPC分类号： H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

摘要： Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.

摘要翻译： 通过在每个N沟道和P沟道器件组中的每一个上对光阻单元进行连续掩蔽，同时在CMOS器件上沉积器件增强涂层，同时对另一个器件进行掩蔽或者脱离另一个器件，并且在每个步骤连续地掩蔽器件组中的一个器件 在施加RF等离子体偏压的同时，用环形RF等离子体电流进行低温CVD步骤。 工件的温度保持在阈值光刻胶去除温度以下。 当未屏蔽组由P沟道器件组成并且当未屏蔽组由N沟道器件组成时，RF偏置电压保持在第一应力下沉积涂层的水平。