Information processing apparatus, method, and program
    61.
    发明申请
    Information processing apparatus, method, and program 审中-公开
    信息处理装置,方法和程序

    公开(公告)号:US20050198024A1

    公开(公告)日:2005-09-08

    申请号:US11067555

    申请日:2005-02-25

    IPC分类号: G06F17/30 G10K15/02 G06F7/00

    摘要: There is provided an information processing apparatus including: a recording unit operable to store attribute information indicating attribute of content and a menu item to be displayed on a display, the menu item representing a category for classifying the content based on the attribute information; a determining circuit operable to determine whether or not another content belonging to the same category as a category to which the content belongs is stored in the recording unit based on the attribute information; and a generator operable to generate a menu item representing a new category, to which the content belongs based on the attribute information of the content, if no other content belonging to the same category as the category to which the content belongs is stored in the storage means.

    摘要翻译: 提供了一种信息处理设备,包括:记录单元,用于存储指示内容的属性的属性信息和要在显示器上显示的菜单项,所述菜单项表示用于基于属性信息对内容进行分类的类别; 确定电路,其可操作以基于所述属性信息来确定属于与所述内容所属的类别相同类别的另一内容是否存储在所述记录单元中; 以及发生器,其可操作以如果没有属于与所述内容所属的类别相同的类别的其他内容存储在所述存储器中,则基于所述内容的属性信息来生成表示所述内容所属的新类别的菜单项 手段。

    Light emitting element and manufacturing method thereof
    62.
    发明申请
    Light emitting element and manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号:US20050056830A1

    公开(公告)日:2005-03-17

    申请号:US10766170

    申请日:2004-01-27

    摘要: In order to provide a light emitting device which consistently emits light at the time of continuous driving in addition to obtain light emission having a high color purity in each of red, green and blue, a light emitting element according to the present invention, in which an organic compound film comprising a hole transporting material, an electron transporting material, a first impurity (first doping material), and a second impurity (second doping material) is provided between an anode and a cathode, is characterized in that the organic compound film is laminated with a first mixed region comprising the hole transporting material and the first impurity, a hole transporting region comprising the hole transporting material, a second mixed region comprising the electron transporting material and the second impurity, and an electron transporting region comprising the electron transporting material in order from the side of the anode.

    摘要翻译: 为了提供在连续驱动时一直发光的发光装置,除了获得红色,绿色和蓝色各自具有高色纯度的发光之外,还提供了根据本发明的发光元件,其中 在阳极和阴极之间设置包含空穴传输材料,电子传输材料,第一杂质(第一掺杂材料)和第二杂质(第二掺杂材料)的有机化合物膜,其特征在于有机化合物膜 层叠有包含空穴传输材料和第一杂质的第一混合区域,包含空穴传输材料的空穴传输区域,包含电子传输材料和第二杂质的第二混合区域和包含电子传输区域的电子传输区域 材料从阳极一侧依次排列。

    Vibrating reed, vibrator, oscillator and electronic device
    63.
    发明授权
    Vibrating reed, vibrator, oscillator and electronic device 失效
    振动簧片,振动器,振荡器和电子设备

    公开(公告)号:US06768247B2

    公开(公告)日:2004-07-27

    申请号:US10087664

    申请日:2002-03-01

    IPC分类号: H01L4108

    CPC分类号: H03H9/215 H03B5/30

    摘要: A vibrating reed is provided which includes a base; and a vibration arm section formed so as to protrude from this base, a grooved portion is formed in one of the obverse surface and the rear surface of the vibration arm section, and a groove electrode portion and a side electrode portion is formed in the grooved portion and the side portion of the vibration arm section, respectively, wherein a short-circuit prevention section is formed between the groove electrode portion and the side electrode portion and thus vibration failure is made unlikely to occur while minimizing the CI value.

    摘要翻译: 提供了一种包括底座的振动片; 以及形成为从该基部突出的振动臂部,在振动臂部的正面和后表面中的一个中形成有开槽部,并且在槽形状中形成有沟槽电极部和侧面电极部 部分和振动臂部分的侧部,其中在槽电极部分和侧电极部分之间形成防短路部分,因此在使CI值最小的同时不可能发生振动故障。

    Semiconductor device and manufacturing method thereof
    69.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US09136390B2

    公开(公告)日:2015-09-15

    申请号:US13104546

    申请日:2011-05-10

    摘要: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

    摘要翻译: 提供一种包括具有氧化物半导体层和优异的电特性的薄膜晶体管的半导体器件。 此外,提供了一种用于制造半导体器件的方法,其中在一个衬底上形成了多种不同结构的薄膜晶体管,以形成多种电路,并且其中步骤数目没有大大增加。 在绝缘表面上形成金属薄膜之后,在其上形成氧化物半导体层。 然后,进行氧化处理如热处理以部分或全部氧化金属薄膜。 此外,在诸如逻辑电路和矩阵电路之类的重点放在诸如操作速度的电路之间,薄膜晶体管的结构是不同的。

    Semiconductor device and manufacturing method thereof
    70.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US09006729B2

    公开(公告)日:2015-04-14

    申请号:US12943558

    申请日:2010-11-10

    CPC分类号: H01L29/7869 H01L29/45

    摘要: It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.

    摘要翻译: 本发明的目的是提供一种用于制造具有使用氧化物半导体形成并且具有稳定的电特性的薄膜晶体管的高度可靠的半导体器件的方法。 半导体器件包括与栅电极重叠的氧化物半导体膜,其间插入有栅极绝缘膜; 以及与氧化物半导体膜接触的源电极和漏电极。 源电极和漏极包括含有一种或多种具有低电负性的金属如钛,镁,钇,铝,钨和钼的混合物,金属化合物或合金。 源电极和漏电极中的氢浓度是氧化物半导体膜中的氢的浓度的1.2倍,优选为5倍以上。