公开(公告)号：US20100127609A1

公开(公告)日：2010-05-27

申请号：US12621830

申请日：2009-11-19

申请人： Miho Watanabe ,  Sadao Sakaguchi ,  Kazuyoshi Okamura ,  Akihiro Kanda ,  Ryo Kikuta ,  Yasuhito Fujita

发明人： Miho Watanabe ,  Sadao Sakaguchi ,  Kazuyoshi Okamura ,  Akihiro Kanda ,  Ryo Kikuta ,  Yasuhito Fujita

IPC分类号： H01K1/30 ,  C09D143/00

CPC分类号： H01J61/35 ,  C03C17/004 ,  C03C17/007 ,  C03C2217/478 ,  H01J9/20 ,  H01J61/34

摘要： A high-pressure discharge lamp includes a luminous tube, an outer bulb housing the luminous tube, and a diffusing film formed on at least one of inner and outer surfaces of the outer bulb, in which the diffusing film includes first silica particles having shapes different in surface curvature from each other and hollow second silica particles.

摘要翻译： 高压放电灯包括发光管，容纳发光管的外灯泡和形成在外灯泡的内表面和外表面中的至少一个上的漫射膜，其中扩散膜包括具有不同形状的第一二氧化硅颗粒 彼此表面曲率和中空的第二二氧化硅颗粒。

公开(公告)号：US07495379B2

公开(公告)日：2009-02-24

申请号：US11453052

申请日：2006-06-15

申请人： Kiyoshi Nishimura ,  Miho Watanabe ,  Kiyoshi Otani

发明人： Kiyoshi Nishimura ,  Miho Watanabe ,  Kiyoshi Otani

IPC分类号： C09K11/02

CPC分类号： H01J61/32 ,  H01J61/28 ,  H01J61/35 ,  H01J61/72 ,  H01J65/046

摘要： An object of the present invention to provide a fluorescent lamp in which after formation of a phosphor layer, a glass bulb is bent and in which the phosphor layer is not subject to cracking or peel-off even in bent parts with a small radius of curvature, thus offering a good appearance. A fluorescent lamp includes a glass bulb 1 having bent parts, a protective film 2 having a fine grain layer 2a comprising fine grains of average grain size at most 100 nm and attached to an inner surface of the glass bulb, and large-sized grains some of which are buried in the fine grain layer 2a, the other large-sized grains projecting from the fine grain layer 2a, a phosphor layer 3 formed on the protective film 2 of the glass bulb 1, discharge inducing means 4, 4 sealably installed in opposite ends of the glass bulb 1, and a discharge medium sealed in the glass bulb 1.

摘要翻译： 本发明的目的是提供一种荧光灯，其中在形成荧光体层之后，玻璃灯泡被弯曲，并且即使在曲率半径小的弯曲部分中荧光体层也不会破裂或剥落 ，从而提供良好的外观。 荧光灯包括具有弯曲部分的玻璃灯泡1，具有细颗粒层2a的保护膜2，其包含平均粒径至多100nm的细晶粒并且附着到玻璃灯泡的内表面，以及大尺寸颗粒 被埋在细晶粒层2a中，另一个从细晶粒层2a突出的大颗粒，形成在玻璃泡1的保护膜2上的荧光体层3，可密封地安装在 玻璃灯泡1的相对端，以及密封在玻璃灯泡1中的放电介质。

公开(公告)号：US20080187537A1

公开(公告)日：2008-08-07

申请号：US11587701

申请日：2005-04-27

申请人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

发明人： Masayuki Tsuchiya ,  Masami Suzuki ,  Kenji Yoshida ,  Etsuko Fujii ,  Miho Watanabe ,  Koichi Matsubara ,  Yu Jau Chen ,  Juliana Sim

IPC分类号： A61K39/395 ,  A61K35/12 ,  C12P21/04 ,  C07H21/00 ,  A61P43/00 ,  C07K16/18 ,  A61K31/70 ,  G01N33/574

CPC分类号： A01K67/027 ,  A01K2267/01 ,  A61K35/16 ,  C07K16/00 ,  C07K16/30

摘要： An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells.The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.

摘要翻译： 本发明的目的是便于获得渗透病毒感染细胞的抗体产生细胞，癌细胞，形成良性增生的异常细胞等，以及提高抗体生产的效率 作为从抗体产生细胞编码它们的核酸。 本发明人发现，当将包含浸润淋巴细胞的癌组织移植到不具有T细胞，B细胞和NK细胞的高度免疫缺陷的动物中并且进一步表现出低的IFN产生能力时，意外地促进了浸润性淋巴细胞的分化和增殖 并且产生识别癌组织的抗体的浆细胞的数量急剧增加，可以容易地分离浆细胞，并且可以容易地从浆细胞制备抗体或编码它们的核酸。

公开(公告)号：US08680608B2

公开(公告)日：2014-03-25

申请号：US12862490

申请日：2010-08-24

申请人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

发明人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7843

摘要： According to one embodiment, a power semiconductor device includes a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type periodically disposed repeatedly along a surface of the first semiconductor layer on a first semiconductor layer of the first conductivity type. A first main electrode is provided to electrically connect to the first semiconductor layer. A fourth semiconductor layer of the second conductivity type is provided to connect to the third semiconductor layer. Fifth semiconductor layers of the first conductivity type are selectively provided in the fourth semiconductor layer surface. A second main electrode is provided on a surface of the fourth and fifth semiconductor layers. A control electrode is provided on a surface of the fourth, fifth, and second semiconductor layers via a gate insulating film. First insulating films are provided by filling a trench made in the second semiconductor layer.

摘要翻译： 根据一个实施例，功率半导体器件包括第一导电类型的第二半导体层和在第一导电类型的第一半导体层上沿着第一半导体层的表面周期性地重复设置的第二导电类型的第三半导体层 。 提供第一主电极以电连接到第一半导体层。 提供第二导电类型的第四半导体层以连接到第三半导体层。 在第四半导体层表面中选择性地设置第一导电类型的第五半导体层。 第二主电极设置在第四和第五半导体层的表面上。 控制电极经由栅极绝缘膜设置在第四，第五和第二半导体层的表面上。 通过填充在第二半导体层中制成的沟槽来提供第一绝缘膜。

公开(公告)号：US08482028B2

公开(公告)日：2013-07-09

申请号：US13424340

申请日：2012-03-19

申请人： Wataru Saito ,  Syotaro Ono ,  Toshiyuki Naka ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

发明人： Wataru Saito ,  Syotaro Ono ,  Toshiyuki Naka ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

IPC分类号： H01L29/772 ,  H01L21/335

CPC分类号： H01L29/7811 ,  H01L21/266 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/66712

摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, and a periodic array structure having a second semiconductor layer of a first conductive type and a third semiconductor layer of a second conductive type periodically arrayed on the first semiconductor layer in a direction parallel with a major surface of the first semiconductor layer. The second semiconductor layer and the third semiconductor layer are disposed in dots on the first semiconductor layer. A periodic structure in the outermost peripheral portion of the periodic array structure is different from a periodic structure of the periodic array structure in a portion other than the outermost peripheral portion.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，以及周期性阵列结构，其具有第一导电类型的第二半导体层和周期性排列在第一半导体上的第二导电类型的第三半导体层 层在与第一半导体层的主表面平行的方向上。 第二半导体层和第三半导体层以点形式设置在第一半导体层上。 周期性阵列结构的最外围部分中的周期性结构不同于最外周部​​分以外的部分的周期性阵列结构的周期性结构。

公开(公告)号：US08412085B2

公开(公告)日：2013-04-02

申请号：US12774322

申请日：2010-05-05

申请人： Tetsuro Kodera ,  Naoyuki Egusa ,  Makoto Furuki ,  Miho Watanabe ,  Takashi Matsubara

发明人： Tetsuro Kodera ,  Naoyuki Egusa ,  Makoto Furuki ,  Miho Watanabe ,  Takashi Matsubara

IPC分类号： G03G15/20

CPC分类号： G03G15/2007

摘要： According to an aspect of the invention, a fixing device includes a laser beam irradiation unit and a conveying unit. The laser beam irradiation unit includes a plurality of laser beam sources and emits a plurality of laser beams to a surface of a recording medium. The conveying unit conveys the recording medium and/or the laser beam irradiation unit so that irradiated regions irradiated with the laser beams are moved in a given direction. When the plurality of laser beams is emitted to a toner image to fix the toner image, the plurality of laser beams satisfies conditions (A) and (B). The condition (A) is that the plurality of laser beams has substantially the same beam power and substantially the same width. The condition (B) is that the plurality of laser beams is independently emitted to the toner image.

摘要翻译： 根据本发明的一个方面，定影装置包括激光束照射单元和输送单元。 激光束照射单元包括多个激光束源，并将多个激光束发射到记录介质的表面。 输送单元输送记录介质和/或激光束照射单元，使得用激光束照射的照射区域沿给定方向移动。 当多个激光束被发射到调色剂图像以固定调色剂图像时，多个激光束满足条件（A）和（B）。 条件（A）是多个激光束具有基本相同的光束功率和基本上相同的宽度。 条件（B）是多个激光束被独立地发射到调色剂图像。

公开(公告)号：US08373247B2

公开(公告)日：2013-02-12

申请号：US13029925

申请日：2011-02-17

申请人： Wataru Saito ,  Syotaro Uno ,  Munehisa Yabuzaki ,  Shunji Taniuchi ,  Miho Watanabe

发明人： Wataru Saito ,  Syotaro Uno ,  Munehisa Yabuzaki ,  Shunji Taniuchi ,  Miho Watanabe

IPC分类号： H01L29/06

CPC分类号： H01L27/07 ,  H01L29/72

摘要： According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a first main electrode, a third semiconductor region of a second conductivity type, a second main electrode, and a plurality of embedded semiconductor regions of the second conductivity type. The second semiconductor region is formed on a first major surface of the first semiconductor region. The first main electrode is formed on a face side opposite to the first major surface of the first semiconductor region. The third semiconductor region is formed on a second major surface of the second semiconductor region on a side opposite to the first semiconductor region. The second main electrode is formed to bond to the third semiconductor region. The embedded semiconductor regions are provided in a termination region. A distance between the embedded semiconductor region and the second major surface along a direction from the second major surface toward the first major surface becomes longer toward outside from the device region.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体区域，第一导电类型的第二半导体区域，第一主电极，第二导电类型的第三半导体区域，第二主电极和 多个第二导电类型的嵌入式半导体区域。 第二半导体区域形成在第一半导体区域的第一主表面上。 第一主电极形成在与第一半导体区域的第一主表面相对的正面上。 第三半导体区域形成在第二半导体区域的与第一半导体区域相对的一侧的第二主表面上。 第二主电极形成为结合到第三半导体区域。 嵌入式半导体区域设置在终端区域中。 沿着从第二主表面朝向第一主表面的方向在嵌入式半导体区域和第二主表面之间的距离从器件区域向外部变长。

公开(公告)号：US08323863B2

公开(公告)日：2012-12-04

申请号：US12537747

申请日：2009-08-07

申请人： Miho Watanabe ,  Takashi Matsubara ,  Shinji Hasegawa ,  Makoto Furuki

发明人： Miho Watanabe ,  Takashi Matsubara ,  Shinji Hasegawa ,  Makoto Furuki

IPC分类号： G03G13/20 ,  G03G15/08

CPC分类号： G03G15/2007 ,  G03G9/0819 ,  G03G9/0924 ,  G03G9/0926

摘要： An image forming method includes forming at least one electrostatic charge image on at least one image holding member, developing the at least one electrostatic charge image using a black toner and a color toner to form toner images, transferring toner images to a receiving body, and fixing the toner images by light-irradiation fusing, the black toner being melted in the light-irradiation fusing, the color toner containing an infrared absorber, a light absorptance of the color toner at a peak wavelength of the light irradiated in the light-irradiation fusing being from about 79% to about 98% of a light absorptance of the black toner at the peak wavelength, and the color difference ΔE of the color toner due to the presence or absence of the infrared absorber is in a specific range.

摘要翻译： 图像形成方法包括在至少一个图像保持部件上形成至少一个静电荷图像，使用黑色调色剂和彩色调色剂显影所述至少一个静电荷图像以形成调色剂图像，将调色剂图像转印到接收体;以及 通过光照射定影调色剂图像，黑色调色剂在光照射熔融中熔化，含有红外线吸收剂的彩色调色剂，在光照射下照射的光的峰值波长处的彩色调色剂的光吸收率 在峰值波长处熔化为黑色调色剂的光吸收率的约79％至约98％，并且由于存在或不存在红外线吸收剂而导致的彩色调色剂的色差＆Dgr; E处于特定范围。

公开(公告)号：US20120074461A1

公开(公告)日：2012-03-29

申请号：US13235302

申请日：2011-09-16

申请人： Syotaro ONO ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

发明人： Syotaro ONO ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/331 ,  H01L29/739

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/42376 ,  H01L29/4238

摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.

摘要翻译： 根据实施例，半导体器件包括设置在第一半导体层上并包括第一柱和第二柱的第二半导体层。 第一控制电极设置在第二半导体层的沟槽中，第二控制电极设置在第二半导体层上并连接到第一控制电极。 除了第二控制电极下方的部分之外，在第二半导体层的表面上设置第一半导体区域。 第二半导体区域设置在第一半导体区域的表面上，第二半导体区域与第二控制电极下方的部分分开，第三半导体区域设置在第一半导体区域上。 第一主电极与第一半导体层电连接，第二主电极与第二和第三半导体区域电连接。

公开(公告)号：US20120056262A1

公开(公告)日：2012-03-08

申请号：US13052028

申请日：2011-03-18

申请人： Wataru SAITO ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

发明人： Wataru SAITO ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

IPC分类号： H01L29/78

CPC分类号： H01L29/7839 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, an embedded electrode, a control electrode, a fourth semiconductor layer of the second conductivity type, a first main electrode, and a second main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The embedded electrode is provided in a first trench via a first insulating film. The first trench penetrates through the second semiconductor layer from a surface of the third semiconductor layer to reach the first semiconductor layer. The control electrode is provided above the embedded electrode via a second insulating film in the first trench. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench. The second trench penetrates through the second semiconductor layer from the surface of the third semiconductor layer to reach the first semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer. The second main electrode is provided in the second trench and connected to the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The embedded electrode is electrically connected to one of the second main electrode and the control electrode. A Schottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，第一导电类型的第三半导体层，嵌入电极，控制电极，第四半导体 第二导电类型的层，第一主电极和第二主电极。 第二半导体层设置在第一半导体层上。 第三半导体层设置在第二半导体层上。 嵌入式电极经由第一绝缘膜设置在第一沟槽中。 第一沟槽从第三半导体层的表面穿过第二半导体层到达第一半导体层。 控制电极通过第一沟槽中的第二绝缘膜设置在嵌入电极的上方。 第四半导体层选择性地设置在第一半导体层中并连接到第二沟槽的下端。 第二沟槽从第三半导体层的表面穿过第二半导体层到达第一半导体层。 第一主电极电连接到第一半导体层。 第二主电极设置在第二沟槽中并连接到第二半导体层，第三半导体层和第四半导体层。 嵌入电极与第二主电极和控制电极中的一个电连接。 在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。