公开(公告)号：US07173576B2

公开(公告)日：2007-02-06

申请号：US11130035

申请日：2005-05-16

申请人： Gregory A. O'Neill, Jr. ,  Young-Min Jo ,  Paul A. Tornatta, Jr. ,  John Charles Farrar ,  Murray Fugate ,  Ki-Chul Kim ,  Joon-Wan Lee

发明人： Gregory A. O'Neill, Jr. ,  Young-Min Jo ,  Paul A. Tornatta, Jr. ,  John Charles Farrar ,  Murray Fugate ,  Ki-Chul Kim ,  Joon-Wan Lee

IPC分类号： H01Q1/36

CPC分类号： H01Q11/08

摘要： A quadrifilar helical antenna comprising two pairs of filars having unequal lengths and phase quadrature signals propagating thereon. A disk-like impedance matching element disposed at a lower end of the antenna matches a source impedance to an antenna impedance. In certain embodiments a first crossbar connector on a substrate disposed at an upper end of the antenna electrically connects two helical filars to form a first filar pair and a second crossbar connector disposed on the substrate connects two filars to form a second filar pair.

摘要翻译： 一种四边形螺旋天线，包括具有不等长度的两对丝线和在其上传播的相位正交信号。 设置在天线的下端的盘状阻抗匹配元件将源阻抗与天线阻抗匹配。 在某些实施例中，设置在天线上端的衬底上的第一交叉连接器电连接两个螺旋丝，以形成第一丝状对，并且设置在衬底上的第二横杆连接器连接两个丝状物以形成第二丝状对。

公开(公告)号：US20060022892A1

公开(公告)日：2006-02-02

申请号：US11130035

申请日：2005-05-16

申请人： Gregory O'Neill ,  Young-Min Jo ,  Paul Tornatta ,  John Farrar ,  Murray Fugate ,  Ki-Chul Kim ,  Joon-Wan Lee

发明人： Gregory O'Neill ,  Young-Min Jo ,  Paul Tornatta ,  John Farrar ,  Murray Fugate ,  Ki-Chul Kim ,  Joon-Wan Lee

IPC分类号： H01Q1/36

CPC分类号： H01Q11/08

摘要： A quadrifilar helical antenna comprising two pairs of filars having unequal lengths and phase quadrature signals propagating thereon. A disk-like impedance matching element disposed at a lower end of the antenna matches a source impedance to an antenna impedance. In certain embodiments a first crossbar connector on a substrate disposed at an upper end of the antenna electrically connects two helical filars to form a first filar pair and a second crossbar connector disposed on the substrate connects two filars to form a second filar pair.

摘要翻译： 一种四边形螺旋天线，包括具有不等长度的两对丝线和在其上传播的相位正交信号。 设置在天线的下端的盘状阻抗匹配元件将源阻抗与天线阻抗匹配。 在某些实施例中，设置在天线上端的衬底上的第一交叉连接器电连接两个螺旋丝，以形成第一丝状对，并且设置在衬底上的第二横杆连接器连接两个丝状物以形成第二丝状对。

公开(公告)号：US20060022252A1

公开(公告)日：2006-02-02

申请号：US11193231

申请日：2005-07-29

申请人： Seok-Joo Doh ,  Jong-Pyo Kim ,  Jong-Ho Lee ,  Ki-Chul Kim

发明人： Seok-Joo Doh ,  Jong-Pyo Kim ,  Jong-Ho Lee ,  Ki-Chul Kim

IPC分类号： H01L29/76

CPC分类号： H01L29/513 ,  H01L29/792

摘要： There are provided a nonvolatile memory device and a method of fabricating the same. A gate region of the nonvolatile memory device is formed as a stack structure including a tunnel oxide layer, a trapping layer, a blocking layer and a control gate electrode. The trapping layer is formed of a high-k dielectric having a higher dielectric constant than that of the tunnel oxide layer. When the trapping layer is formed of high-k dielectric, an EOT in a same thickness can be reduced, and excitation of electrons of the control gate electrode to the tunnel oxide layer due to a high potential barrier relative to the tunnel oxide layer is prevented so that program and erase voltages can be further reduced. As such, a problem that the tunnel oxide layer is damaged due to the conventional high program and erase voltages can be solved by reducing the program and erase voltages, and program and erase speeds of the transistor can be further improved.

摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件的栅极区域形成为包括隧道氧化物层，俘获层，阻挡层和控制栅电极的堆叠结构。 捕获层由具有比隧道氧化物层的介电常数更高的介电常数的高k电介质形成。 当捕获层由高k电介质形成时，可以减小相同厚度的EOT，并且防止由于相对于隧道氧化物层的高势垒而使控制栅电极的电子激发到隧道氧化物层 从而可以进一步减少编程和擦除电压。 因此，通过减少编程和擦除电压可以解决隧道氧化物层由于常规的高编程和擦除电压而损坏的问题，并且可以进一步提高晶体管的编程和擦除速度。

公开(公告)号：US10041172B2

公开(公告)日：2018-08-07

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/44 ,  C23C16/455

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

公开(公告)号：US08496150B2

公开(公告)日：2013-07-30

申请号：US12458554

申请日：2009-07-15

申请人： Jae-Pil Lee ,  Ki-Chul Kim

发明人： Jae-Pil Lee ,  Ki-Chul Kim

IPC分类号： B26D7/18

CPC分类号： B26D7/1836 ,  B26D3/08 ,  B26F3/002 ,  B28D5/0011 ,  B28D5/0052 ,  B65G2249/045 ,  C03B33/033 ,  C03B33/07 ,  C03B33/076 ,  Y10T83/2092 ,  Y10T225/307 ,  Y10T225/325 ,  Y10T225/35

摘要： An apparatus for cutting a flat display panel prevents a light emitting surface of a flat display panel from being damaged due to a pit or a scratch. The apparatus for cutting a flat display panel includes a stage supporting a rear substrate of the flat display panel, a chip blocking unit disposed to correspond to a non-scrap portion of the flat display panel, and a scrap breaker to grip a scrap portion of the flat display panel that is to be separated from the flat display panel. A scribing line is formed between the scrap portion and a non-scrap portion of the flat display panel.

摘要翻译： 用于切割平面显示面板的装置防止平面显示面板的发光表面由于凹坑或划痕而损坏。 用于切割平板显示面板的装置包括支撑平板显示面板的后基板的台，与平板显示面板的非废片部对应设置的切屑分离单元，以及用于夹持 平板显示面板与平板显示面板分离。 在平板显示面板的废料部分和非废料部分之间形成划线。

公开(公告)号：US08192188B2

公开(公告)日：2012-06-05

申请号：US12222047

申请日：2008-07-31

申请人： Ki-Chul Kim

发明人： Ki-Chul Kim

IPC分类号： B05C1/00 ,  B29C70/74

CPC分类号： H01L51/56 ,  H01L51/5246

摘要： An encapsulation apparatus capable of securely sealing a gap of a display panel and improving intensity of the display panel, and a method of manufacturing an organic light emitting display device using the encapsulation apparatus are taught. The encapsulation apparatus includes an injection port having tapered projecting edges formed in both sides of one end the injection port, and injecting a reinforcing material into a gap of a display panel in a dual surface contact manner, the first substrate and the second substrate being attached to each other using a sealant; and a supporter coupled to the injection port and supporting the injection port.

摘要翻译： 教导了能够可靠地密封显示面板的间隙并提高显示面板的强度的封装装置，以及使用该封装装置制造有机发光显示装置的方法。 封装装置包括：注入口，其具有形成在注射口的一端的两侧的锥形突出边缘，并且以双面接触方式将增强材料注入到显示面板的间隙中，第一基底和第二基底被附接 彼此使用密封剂; 以及连接到注射口并支撑注射口的支撑件。

公开(公告)号：US08101337B2

公开(公告)日：2012-01-24

申请号：US12532149

申请日：2008-03-19

申请人： Ki-Chul Kim ,  Sung-Lyul Maeng ,  Sung-Jin Shin ,  Dae-Joon Kang

发明人： Ki-Chul Kim ,  Sung-Lyul Maeng ,  Sung-Jin Shin ,  Dae-Joon Kang

IPC分类号： G03C5/00 ,  C09D1/00 ,  H01L21/316

CPC分类号： C01G19/00 ,  C01P2002/70 ,  C01P2002/84 ,  C01P2004/03 ,  C01P2006/40 ,  C23C18/1216 ,  C23C18/14 ,  G03F7/0042 ,  Y10S430/143

摘要： Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.

摘要翻译： 提供了一种合成ITO电子束抗蚀剂的方法和形成ITO图案的方法。 通过将氯化铟四水合物和氯化锡二水合物溶解在2-乙氧基乙醇中来合成ITO电子束抗蚀剂。 形成ITO图案的方法包括：在基板上形成ITO电子束抗蚀剂膜，通过图案化ITO电子束抗蚀剂膜形成ITO电子束抗蚀剂图案，并通过退火ITO电子束抗蚀剂图案形成ITO图案。

公开(公告)号：US07674714B2

公开(公告)日：2010-03-09

申请号：US12007430

申请日：2008-01-10

申请人： Ki-Chul Kim

发明人： Ki-Chul Kim

IPC分类号： H01L21/44

CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of fabricating a semiconductor device according to an example embodiment may include forming an isolation layer defining an active region in a semiconductor substrate, forming a silicon pattern and a sacrificial pattern on the active region, the sacrificial pattern including a semiconductor material different from the silicon pattern, forming a gate spacer on a sidewall of the silicon pattern and a sidewall of the sacrificial pattern, removing the sacrificial pattern to expose a top surface of the silicon pattern, and/or forming a gate silicide on the silicon pattern.

摘要翻译： 根据示例性实施例的制造半导体器件的方法可以包括在半导体衬底中形成限定有源区的隔离层，在有源区上形成硅图案和牺牲图案，所述牺牲图案包括不同于 硅图案，在硅图案的侧壁上形成栅极间隔物和牺牲图案的侧壁，去除牺牲图案以暴露硅图案的顶表面，和/或在硅图案上形成栅极硅化物。

公开(公告)号：US20100011927A1

公开(公告)日：2010-01-21

申请号：US12458553

申请日：2009-07-15

申请人： Jae-Pil Lee ,  Ki-Chul Kim

发明人： Jae-Pil Lee ,  Ki-Chul Kim

IPC分类号： B26D7/18

CPC分类号： B26D3/08 ,  B26D1/15 ,  B26D7/1836 ,  B26F3/002 ,  B28D5/0011 ,  B28D5/0052 ,  B28D5/0094 ,  Y10T83/202 ,  Y10T83/207

摘要： An apparatus for cutting a flat display panel to prevent a light emitting surface of the flat display panel from becoming defective and contaminated while cutting the flat display panel is disclosed. The apparatus for cutting a flat display panel includes a stage to support a rear substrate of a flat display panel, a scribing support block to support a front substrate the flat display panel, a cutter to scribe the rear substrate of the flat display panel, and a scrap breaker to grip a scrap portion of the flat display panel that is to be separated from the flat display panel after cutting process of the flat display panel.

摘要翻译： 公开了一种用于切割平面显示面板以防止平板显示面板的发光面在切割平板显示面板时变得有缺陷和污染的装置。 用于切割平板显示面板的装置包括支撑平板显示面板的后基板的台，支撑平板显示面板的前基板的划线支撑块，划分平板显示面板的后基板的切割器，以及 用于在平板显示面板的切割处理之后夹持要从平板显示面板分离的平板显示面板的废料部分的废料破碎机。

公开(公告)号：US20090085125A1

公开(公告)日：2009-04-02

申请号：US12285044

申请日：2008-09-29

申请人： Ki-Chul Kim ,  Hong-jae Shin ,  Moon-han Park ,  Hwa-sung Rhee ,  Jung-deog Lee

发明人： Ki-Chul Kim ,  Hong-jae Shin ,  Moon-han Park ,  Hwa-sung Rhee ,  Jung-deog Lee

IPC分类号： H01L27/092 ,  H01L29/94

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848

摘要： Provided are a metal oxide semiconductor (MOS) transistor and a complementary MOS (CMOS) transistor each having a strained channel epi layer, and methods of fabricating the transistors. The MOS transistor may include at least one active region defined by an isolation structure formed in a substrate. At least one channel trench may be formed in a part of the at least one active region. At least one strained channel epi layer may be in the at least one channel trench. At least one gate electrode may be aligned on the at least one strained channel epi layer. Sources/drains may be arranged in the at least one active region along both sides of the at least one strained channel epi layer.

摘要翻译： 提供了具有应变通道外延层的金属氧化物半导体（MOS）晶体管和互补MOS（CMOS）晶体管，以及制造晶体管的方法。 MOS晶体管可以包括由形成在衬底中的隔离结构限定的至少一个有源区。 至少一个通道沟槽可以形成在至少一个有源区域的一部分中。 至少一个应变通道外延层可以在至少一个沟道沟槽中。 至少一个栅极可以在至少一个应变通道外延层上对准。 源/排水口可以布置在沿着至少一个应变通道外延层的两侧的至少一个有源区域中。